ERA37
Abstract: No abstract text available
Text: ERA37 0.5A ( 800, 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features High speed switching Ultra small package Possible for 5mm pitch automatic insertion Marking Color code : Green High reliability Applications
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ERA37
800esig1000
ERA37
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Untitled
Abstract: No abstract text available
Text: ERA37 0.5A ( 800, 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features High speed switching Ultra small package Possible for 5mm pitch automatic insertion Marking Color code : Green High reliability Applications
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ERA37
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erA37 diode
Abstract: ERA37
Text: ERA37 0.5A ( 800, 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features High speed switching Ultra small package Possible for 5mm pitch automatic insertion Marking Color code : Green High reliability Applications
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ERA37
erA37 diode
ERA37
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diode 1000V 0.5a
Abstract: No abstract text available
Text: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability
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ERA22
ERA22
diode 1000V 0.5a
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ERA22
Abstract: No abstract text available
Text: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability
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ERA22
ERA22
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ERA22
Abstract: No abstract text available
Text: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability
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ERA22
ERA22
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Untitled
Abstract: No abstract text available
Text: ERA22 0.5A (200V to 1000V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE ø2.5 ø0.56 3.0 28 MIN. 28 MIN. Features Ultra small package, possible for 5mm pitch automatic insertion Marking High voltage by mesa design Color code : Green High reliability
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ERA22
ERA22
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information PolarTM Power MOSFET VDSS ID25 IXTA05N100P IXTP05N100P RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTA05N100P
IXTP05N100P
O-263
05N100P
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXTA05N100P IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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IXTA05N100P
IXTP05N100P
O-263
O-220AB
05N100P
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Power MOSFET Wafer
Abstract: 2N7002E zener wafer
Text: 3VD040060NEJL 3VD040060NEJL STRUCTURE N-CH MOSFET CHIPS WITH ESD PROTECTED DESCRIPTION Ø 3VD040060NEJL is a N-Channel enhancement mode MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Zener diode ESD protected up to 1000V HBM Ø
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3VD040060NEJL
3VD040060NEJL
OT-23
2N7002E.
Power MOSFET Wafer
2N7002E
zener wafer
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DDG1C10
Abstract: DDG1C13 DDG1C HITACHI Hitachi DSA0047
Text: FAST RECOVERY DIODE DDG1C FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. DDG1C10 (1000V) DDG1C13 (1300V) Yellow Black Cathode band Symbol(Red) Color of cathode band
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DDG1C10
DDG1C13
28MIN.
62MIN.
DDG1C10
DDG1C13
DDG1C HITACHI
Hitachi DSA0047
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TL130
Abstract: SC371-10A 02 MARKING diode 1000V 0.5a
Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features 1.35 ± 0.4 Surface-mount device Low VF + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking
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SC371-10A
TL130
SC371-10A
02 MARKING
diode 1000V 0.5a
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Untitled
Abstract: No abstract text available
Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 1.35 ± 0.4 Surface-mount device Low VF 2MIN 5.1 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 Super high speed switching Marking
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SC371-10A
et1000
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SC371-10A
Abstract: TL130 SC371 diode 1000V 10a fast recovery diode 1000v 10A
Text: SC371-10A 1000V / 0.5A Fast Recovery Diode Outline drawings, mm (FRD) 3.0 ± 0.2 Features + 0.2 0.1 - 0.1 2.6 ± 0.2 2.5 ± 0.2 Marking 2MIN 1.35 ± 0.4 Surface-mount device Low VF 1.35 ± 0.4 1.2 ± 0.2 + 0.4 - 0.1 5.1 Super high speed switching Marking
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SC371-10A
SC371-10A
TL130
SC371
diode 1000V 10a
fast recovery diode 1000v 10A
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DDG1C10
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DDG1C FEATURES OUTLINE DRAWING Unit in mm inch φ 5 MAX (0.2) • For high speed switching. • Diffused-junction. Glass passivated and encapsulated. DDG1C10 (1000V) DDG1C13 (1300V) Yellow Black Cathode band Symbol(Red) Color of cathode band
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62MIN.
28MIN.
DDG1C10
DDG1C13
DDG1C10
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Untitled
Abstract: No abstract text available
Text: PFRO Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 1000V IF = 1.25A trr = 100nS IR = 1µA Very low reverse recovery time Glass passivated for hermetic sealing
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100nS
013oz
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Untitled
Abstract: No abstract text available
Text: PFF8, PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 800 - 1000V IF = 1.0A trr = 75nS IR = 1µA Very low reverse recovery time Glass passivated for hermetic sealing
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013oz
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IXTP05N100P
Abstract: 05n10
Text: Advance Technical Information IXTP05N100P PolarTM Power MOSFET VDSS ID25 RDS on = 1000V = 0.5A ≤ 30Ω Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-220AB Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ
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IXTP05N100P
O-220AB
05N100P
IXTP05N100P
05n10
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Untitled
Abstract: No abstract text available
Text: PFF8, PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 800 - 1000V IF = 1.0A trr = 75nS IR = 1µA Very low reverse recovery time Glass passivated for hermetic sealing
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013oz
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Untitled
Abstract: No abstract text available
Text: 2PFF8, 2PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 800 - 1000V IF = 3.0A trr = 75nS IR = 2µA Very low reverse recovery time Glass passivated for hermetic sealing
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035oz
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PF019
Abstract: No abstract text available
Text: PF8/PF0 Axial Leaded Hermetically Sealed Fast Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = IF = trr = IR = 800 & 1000V 1.8A 300nS 1µA Low reverse recovery time Glass passivated for hermetic sealing Low switching losses
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300nS
369mg
PF019
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Untitled
Abstract: No abstract text available
Text: 2PFF8, 2PFF0 Axial Leaded Hermetically Sealed Superfast Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 800 - 1000V IF = 3.0A trr = 75nS IR = 2µA Very low reverse recovery time Glass passivated for hermetic sealing
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035oz
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Untitled
Abstract: No abstract text available
Text: PM6/PM8/PM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Description Features Quick reference data VR = 600V - 1000V IF = 2.0A trr = 3µS IR = 1.0µA Avalanche capability High thermal shock resistance Glass passivated for hermetic sealing
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369mg
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A14A
Abstract: A14F
Text: A14A, A14C, A14E A14F, A14P 1A, 50V - 1000V Diodes Decem ber 1993 Features Package • High-Temperature M etallurglcally Bonded, No Com pression Contacts as Found In Diode-Constructed Rectifiers JEDEC STYLE 0 0 -2 0 4 TOP VIEW • Glass-Passivated Junction
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OCR Scan
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MIL-STD-19500
A14A
A14F
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