B5817WS
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5817WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 20 V Operating and storage junction temperature range
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OD-323
B5817WS
OD-323
B5817WS
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B5819WS
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5819WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 40 V Operating and storage junction temperature range
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OD-323
B5819WS
OD-323
B5819WS
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Schottky Diode 30V 1A SOD
Abstract: diode SOD-323 B5818WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes B5818WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES Power dissipation PCM: 0.2 W Tamb=25℃ Collector current IF: 1 A Collector voltage VR: 30 V Operating and storage junction temperature range
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OD-323
B5818WS
OD-323
Schottky Diode 30V 1A SOD
diode SOD-323
B5818WS
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byv26 500
Abstract: BYV26 BYV26A BYV26B BYV26C BYV26D BYV26E BYV26DBYV26E
Text: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A.
BYV26E
DO-41
BYV26A
BYV26
BYV26;
BYV26D;
byv26 500
BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
BYV26DBYV26E
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BYV26
Abstract: BYV26A BYV26B BYV26C BYV26D BYV26E
Text: BYV26A.BYV26E 1 Amp. Very Fast Soft Recovery Glass Passivated Avalanche Diode Dimensions in mm. DO-41 Plastic Voltage 200 to 1000 V. Current 1 A at 55 ºC. 5 +0.2 -0 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A.
BYV26E
DO-41
BYV26A
BYV26
BYV26;
BYV26D;
BYV26
BYV26A
BYV26B
BYV26C
BYV26D
BYV26E
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Untitled
Abstract: No abstract text available
Text: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A
BYV26E
DO-41
BYV26B
BYV26C
BYV26A
BYV26D
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BYV26A
Abstract: No abstract text available
Text: BYV26A . BYV26E 1 Amp. Very Fast Recovery Glass Passivated Avalanche Diode DO-41 Plastic Current 1.0 A at 55 °C Voltage 200 to 1000 V ø0.8 ±0.05 ø2.6 ±0.1 Dimensions in mm. R +0.2 -0 5 ±0.5 58.5 Mounting instructions 1. Min. distance from body to soldering point,
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BYV26A
BYV26E
DO-41
BYV26A
BYV26D
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SD-46 Diode
Abstract: Schottky 30A 40v schottky diode 60V 5A diode Schottky Diode 20V 5A Schottky Diode 40V 2A 5A schottky 60V 3A diode ERA81-004 ERA83-006
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
SD-46 Diode
Schottky 30A 40v
schottky diode 60V 5A
diode
Schottky Diode 20V 5A
Schottky Diode 40V 2A
5A schottky
60V 3A diode
ERA81-004
ERA83-006
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schottky diode 60V 5A
Abstract: 30A high speed diode Schottky Diode 20V 5A Schottky diode high reverse voltage marking code 1A diode Schottky Diode 40V 2A Schottky Barrier 3A diode schottky code 10 SCHOTTKY BARRIER DIODE ERG81-004
Text: Schottky-Barrier Diode SBD Single Device Type Features Page VRRM IF Package SCHOTTKY BARRIER DIODE (30V/2.0A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (40V/0.6A) SCHOTTKY BARRIER DIODE (40V/1A) SCHOTTKY BARRIER DIODE (60V/1A) SCHOTTKY BARRIER DIODE
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5V/10A)
500ns,
schottky diode 60V 5A
30A high speed diode
Schottky Diode 20V 5A
Schottky diode high reverse voltage
marking code 1A diode
Schottky Diode 40V 2A
Schottky Barrier 3A
diode schottky code 10
SCHOTTKY BARRIER DIODE
ERG81-004
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300108J
Abstract: ACV11012 ACV12012 ACV12212 ACV13012 ACV31012 ACV32012 ACV33012
Text: CV ACV AUTOMOTIVE LOW PROFILE MICRO-ISO/MICRO-280 RELAY mm inch 15 .591 22.5 .886 Micro ISO 1c type Micro ISO 1a type 15 .591 22.5 .886 15.7 .618 Micro 280 plug-in type FEATURES • Low profile: 22.5 mm(L)x15 mm(W)×15.7 mm(H) .886 inch(L)×.591 inch(W)×.618 inch(H)
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MICRO-ISO/MICRO-280
300108J
300108J
ACV11012
ACV12012
ACV12212
ACV13012
ACV31012
ACV32012
ACV33012
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Dsei 2x101-12A
Abstract: ixys dsei 1x31-06c ixys dsei 2x31-06c IXYS DSEI 2X121-02a ixys dsei 2x30-06c DSEI IXYS 2x31-12B 2x61-06c 2x121-02a 2x31-12B 2x31-10b
Text: FRED Contents Package style/Bauform 1b TO-252 AA 1b 1 1a 1 TO-220 AC 1 1a TO-263 AA 1a 2 TO-247 AD 2 2a TO-247 AD 2b ISOPLUS 247 TM 2a/b 2a 2a 3 SOT-227 B, miniBLOC 3 1999 IXYS All rights reserved VRRM IFAV trr V A ns 600 600 600 6 8 8 35 35 35 600 1000
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O-252
0-06A
0-10A
0-12A
D1-16
D1-18
D1-20
0-02A
Dsei 2x101-12A
ixys dsei 1x31-06c
ixys dsei 2x31-06c
IXYS DSEI 2X121-02a
ixys dsei 2x30-06c
DSEI IXYS 2x31-12B
2x61-06c
2x121-02a
2x31-12B
2x31-10b
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Untitled
Abstract: No abstract text available
Text: SVD1N60M/SVD1N60T 1A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2 These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD1N60M/SVD1N60T
O-251-3L
30TYP
O-220-3L
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Untitled
Abstract: No abstract text available
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
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E6327
Abstract: Q67000-S067
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
E6327
Q67000-S067
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E6327
Abstract: Q67000-S067
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 Pin 3 D Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
E6327
Q67000-S067
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BAS3010A-03W
Abstract: marking AF BAR63-03W
Text: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ I F = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications • Pb-free (RoHS compliant) package 1)
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BAS3010A.
010A-03W
BAS3010A-03W
OD323
50/60Hz,
BAS3010A-03W
marking AF
BAR63-03W
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BAS3010A-03W
Abstract: No abstract text available
Text: BAS3010A. Medium Power AF Schottky Diode • Forward current: 1 A • Reverse voltage: 30 V • Very low forward voltage typ. 0.41V @ IF = 1A • For high efficiency DC/DC conversion, fast switching, protection and clamping applications BAS3010A-03W 1
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BAS3010A.
BAS3010A-03W
OD323
BAS3010A-03W
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E6327
Abstract: Q67000-S067
Text: BSP 296 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 296 100 V 1A 0.8 Ω SOT-223 BSP 296 Type BSP 296 Ordering Code Q67000-S067
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OT-223
Q67000-S067
E6327
Sep-12-1996
E6327
Q67000-S067
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2SD2428
Abstract: TF02
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE U nit in nun COLOR TV HORIZONTAL OUTPUT APPLICATIONS. • • • High Voltage : V c b O -^O O V High Speed Switching : tf=0.2/as Typ. (Icp = 6A, lBl(end) = 1-2A) Built-in Damper Diode. ^e t-ll n r t V. f P "S in
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D2428
2SD2428
2SD2428
TF02
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16FL2CZ
Abstract: No abstract text available
Text: SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK HED 16(D, F)L2CZ47A Unit in SWITCHING MODE POWER SUPPLY APPLICATION. 10.3 MAX CONVERTER & CHOPPER APPLICATION. • Repetitive Peak Reverse Voltage - 03.2 ± 0.2 - : V r r m =200, 300V • Average Output Rectified Current : Io=16A
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L2CZ47A
16DL2CZ47A
16FL2CZ47A
16DL2CZ47AJ
16FL2CZ47A)
16FL2CZ
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20JL2C41A
Abstract: 20JL2C
Text: TO SHIBA 20JL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20JL2C41A SWITCHING TYPE PO W ER SUPPLY APPLICATION Unit in mm 03.2 + 0.2 / • Repetitive Peak Reverse Voltage V r r m • Average Output Rectified Current I 0 = 2 0A •
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20JL2C41A
961001EAA2'
20JL2C41A
20JL2C
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EC10QS09
Abstract: EC10QS10 FC53
Text: SCHOTTKY BARRIER DIODE i.ia / 90~ io o v ecioqso9 ecioqsio FEA TUR ES Miniature Size, Surface Mount Device 2-2 .ÖS7 1.8(.071) 5.3(.209) ° Low Forward Voltage Drop - O IT 8 5 5 - _ 4.7(.168)_ 4.3(169) » Low Power Loss, High Efficiency 0.2(.008) 2.7(.106)
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EC10QS09
EC10QS10
T575T
EC10QS09
bbl51E3
EC10QS10
FC53
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DFG1A2
Abstract: No abstract text available
Text: 4496205 H H A C H I / O P T O E L E U I R U N I C S > ^68C 09828 • ütjjÈ M & -f =t— K (F a st R e c o v e ry Diode DFGTA T ñ 29MIN. (1.14) DE I M4 ^ ^ 2 0 5 DOma^fl 1 D 7 "-¿ > 3 ‘ / 3 JL V R R M : 200V— 800V >F(AV): 1 0 A trr : 0.2/*s 5MAX.
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29MIN.
ID55i
DFG1A2
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Untitled
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KDS165T TECHNI CAL DATA SI LI CON EPI TAXI AL PLANAR DIODE ULTRA HIGH SPEED SW ITC H IN G A PPLICATION. FEA T U RE S • L ow Forw ard V oltage. • Fast R everse R ecovery T im e. • Sm all T otal C apacitance. DIM A 2.9± 0.2 n B
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KDS165T
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