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Power Integrations 1SP0635V2M1C-DIM1500ESM33-PR500 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, master, fiber optic interface with versatile link
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635V2M1C-DIM1500ESM33-PR500					1 - 10 $402.07 100 $389.69 1000 $389.69 10000 $389.69	Get Quote
Power Integrations 1SP0635D2S1-DIM1500ESM33-PSA012 Gate Drivers PI Gate Driver Only
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1-DIM1500ESM33-PSA012					1 - 10 $141.9 100 $127.27 1000 $127.27 10000 $127.27	Get Quote
Power Integrations 1SP0635D2S1-DIM1500ESM33-PR500 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, generic version
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1-DIM1500ESM33-PR500					1 - 10 $141.9 100 $127.27 1000 $127.27 10000 $127.27	Get Quote
Power Integrations 1SP0635D2S1C-DIM1500ESM33-PR500 Gate Drivers Plug-and-Play Gate Driver, SCALE-2, slave, conformal coating
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1C-DIM1500ESM33-PR500					1 - 10 $202.1 100 $181.26 1000 $181.26 10000 $181.26	Get Quote
Power Integrations 1SP0635D2S1C-DIM1500ESM33-PSA012 Gate Drivers Conformal Coded PI Gate Driver Only
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0635D2S1C-DIM1500ESM33-PSA012					1 - 10 $202.1 100 $181.26 1000 $181.26 10000 $181.26	Get Quote

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DIM15 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	PDF	DIM150WHS12-E000 PDS5630-1 DIM150WHS12-E000
Untitled Abstract: No abstract text available Text: DIM1500ESM33-TL000 Single Switch IGBT Module Replaces DS6112-1 DS6112-2 September 2014 LN31983 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)	Original	PDF	DIM1500ESM33-TL000 DS6112-1 DS6112-2 LN31983)
DIM1500ESM33-TS000 Abstract: DIM1500ESM33-TS Text: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-5 DS6072-6 September 2014 LN31982 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	PDF	DIM1500ESM33-TS000 DS6072-5 DS6072-6 LN31982) DIM1500ESM33-TS000 DIM1500ESM33-TS
DIM1500ASM33-TS001 Abstract: No abstract text available Text: DIM1500ASM33-TS001 Single Switch IGBT Module Replaces DS6095-1 DS6095-2 September 2014 LN31956 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)	Original	PDF	DIM1500ASM33-TS001 DS6095-1 DS6095-2 LN31956) DIM1500ASM33-TS001
Untitled Abstract: No abstract text available Text: DIM150WHS12-H000 DIM150WHS12-H000 Fast Half Bridge IGBT Module Target Infomation DS5630-1.1 September 2003 FEATURES • Non Punch Through Silicon ■ 10µs Short Circuit Withstand ■ fsw for Applications > 20kHz ■ Isolated Copper Baseplate KEY PARAMETERS	Original	PDF	DIM150WHS12-H000 DS5630-1 20kHz DIM150WHS12-H000
DIM150WHS17-E000 Abstract: No abstract text available Text: DIM150WHS17-E000 DIM150WHS17-E000 Half Bridge IGBT Module PDS5716-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	PDF	DIM150WHS17-E000 PDS5716-1 DIM150WHS17-E000
DIM150PSM45-F000 Abstract: No abstract text available Text: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES	Original	PDF	DIM150PSM45-F000 DS5956 LN26978) DIM150PSM45-F000
Untitled Abstract: No abstract text available Text: DIM1500ASM33-TS001 Single Switch IGBT Module DS6095-1 April 2013 LN30405 FEATURES KEY PARAMETERS • 10.2kV Isolation  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	PDF	DIM1500ASM33-TS001 DS6095-1 LN30405)
IC 21069 Abstract: No abstract text available Text: DIM150CHS17-E000 DIM150CHS17-E000 Half Bridge IGBT Module PDS5716-1.2 February 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	PDF	DIM150CHS17-E000 PDS5716-1 DIM150CHS17-E000 IC 21069
Untitled Abstract: No abstract text available Text: DIM150WHS12-E000 DIM150WHS12-E000 Half Bridge IGBT Module PDS5630-1.2 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	PDF	DIM150WHS12-E000 PDS5630-1 DIM150WHS12-E000
DIM1500ASM33-TL001 Abstract: No abstract text available Text: DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 LN30625 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10.2kV Isolation  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability	Original	PDF	DIM1500ASM33-TL001 DS6103-1 LN30625) DIM1500ASM33-TL001
DIM150CHS12-E000 Abstract: No abstract text available Text: DIM150CHS12-E000 DIM150CHS12-E000 Half Bridge IGBT Module PDS5713-1.0 January 2004 FEATURES • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses ■ 10µs Short Circuit Withstand KEY PARAMETERS VCES typ VCE(sat) (max)	Original	PDF	DIM150CHS12-E000 PDS5713-1 DIM150CHS12-E000
Untitled Abstract: No abstract text available Text: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	PDF	DIM1500ESM33-TL000 DS6112-1 LN30640)
Untitled Abstract: No abstract text available Text: DIM1500ASM33-TL001 Single Switch IGBT Module DS6103-1 June 2013 LN30625 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10.2kV Isolation  10µs Short Circuit Withstand VCES VCE(sat) * (typ) IC (max) IC(PK) (max)  High Thermal Cycling Capability	Original	PDF	DIM1500ASM33-TL001 DS6103-1 LN30625)

Untitled Abstract: No abstract text available Text: DIM1500ESM33-TL000 Single Switch IGBT Module DS6112-1 June 2013 LN30640 FEATURES KEY PARAMETERS • Low VCE(sat) Device  10µs Short Circuit Withstand  High Thermal Cycling Capability VCES VCE(sat)* (typ) IC (max) IC(PK) (max)  High Current Density Enhanced DMOS SPT	Original	PDF	DIM1500ESM33-TL000 DS6112-1 LN30640)
Untitled Abstract: No abstract text available Text: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 LN30425 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	PDF	DIM1500ESM33-TS000 DS6072-3 DS6072-4 LN30425)
Untitled Abstract: No abstract text available Text: DIM1500ESM33-TS000 Single Switch IGBT Module Replaces DS6072-3 DS6072-4 April 2013 LN30425 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)	Original	PDF	DIM1500ESM33-TS000 DS6072-3 DS6072-4 LN30425)