G173-G179
Abstract: transistor G179
Text: Journal of The Electrochemical Society, 156 ͑11͒ G173-G179 ͑2009͒ G173 0013-4651/2009/156͑11͒/G173/7/$25.00 The Electrochemical Society Interlevel Dielectric Processes Using PECVD Silicon Nitride, Polyimide, and Polybenzoxazole for GaAs HBT Technology
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G173-G179
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G173-G179
transistor G179
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Abstract: No abstract text available
Text: Effects of Deposition Method of PECVD Silicon Nitride as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Thin silicon nitride Si3N4 films deposited using plasma-enhanced
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300oC,
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Dielectric Constant Silicon Nitride
Abstract: thermal conductivity thermal conductivity maruwa AN170 ceramic thermal conductivity AN-200 AN-230
Text: MARUWA GENERAL CATALOG ALUMINIUM NITRIDE PRODUCTS [ AlN ] The Aluminium Nitride product is a new material having such characteristics as superior thermal conductivity, high electric insulation, and coefficient of thermal expansion similar to that of silicon Si and is drawing attention as a next-generation
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0015mm/mm
AN-170
AN-200
AN-230
400fC)
Dielectric Constant Silicon Nitride
thermal conductivity
thermal conductivity maruwa
AN170
ceramic thermal conductivity
AN-200
AN-230
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inverter welding machine circuit board
Abstract: washing machine electric circuit control circuit of induction cooker Electric Welding Machine thyristor Microwave Oven Inverter Control IC washing machine electric circuit drawing Dielectric Constant Silicon Nitride induction cooker circuit sheet metal press bending machine induction cooker circuit with IGBT
Text: 窒化アルミニウム製品〔ARN〕 ALUMINIUM NITRIDE PRODUCTS 回路部品 CIRCUIT CERAMICS 窒化アルミニウム製品は優れた熱伝導性、高い電気絶縁性、およ びシリコン（Si）に近い熱膨張率の特性を持ち、高熱伝導性材料と
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diele100M
inverter welding machine circuit board
washing machine electric circuit
control circuit of induction cooker
Electric Welding Machine thyristor
Microwave Oven Inverter Control IC
washing machine electric circuit drawing
Dielectric Constant Silicon Nitride
induction cooker circuit
sheet metal press bending machine
induction cooker circuit with IGBT
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ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
Abstract: No abstract text available
Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have
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01AC09
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology
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Abstract: No abstract text available
Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320
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impatt diode
Abstract: IMPATT-Diode Dielectric Constant Silicon Nitride N00014-87-K-0243 "x-ray detector" electrochemical gas sensors datasheet Zinc sulfide SCI mttf impatt transistor b 1238
Text: Custom Product Papers and Briefs PECVD Diamond Films for Use in Silicon Microstructures John A. Herb and Michael G. Peters—Crystallume, Menlo Park, CA Stephen C. Terry and J. H. Jerman—IC Sensors, Milpitas, CA ABSTRACT and 3 times higher than silicon nitride. In addition, the dry
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MF202
Abstract: Si3N4 AuSn eutectic eftec 45 SC-101 silicon carbide MgO Al2O3 Thermal conductivity coefficient properties fe -80 ni
Text: MITSUBISHI INTEGRATED CIRCUIT PACKAGES PROPERTIES OF PACKAGE MATERIALS 7. PROPERTIES OF PACKAGE MATERIALS Principal package material characteristics are shown in the following tables. Table 1 Case Material Characteristics Material Almina Alminum nitride Type Name
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SC-101
42Alloy
MF202
Si3N4
AuSn eutectic
eftec 45
SC-101
silicon carbide
MgO Al2O3 Thermal conductivity coefficient
properties fe -80 ni
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Dielectric Constant Silicon Nitride
Abstract: 22v10 pal 22V10* die 3702c capacitors coefficient of thermal expansion hasp cpu mcm military mcm cpu
Text: The Future in Microelectronics 35 South Service Road • Plainview, NY 11803 TEL: 516 694-6700 · FAX: 516 694-6715 C I RC UI T TE C HN O L OG Y APPLICATION NOTE #100 A Proposal for the Design and Manufacture of a High Speed CPU Multichip Module for GHz Signal Processing
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Abstract: No abstract text available
Text: Microelectronics Reliability 46 2006 713–730 www.elsevier.com/locate/microrel Introductory Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh * GeneSiC Semiconductor Inc., 42652 Jolly Lane, South Riding, VA 20152, United States
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TN0002
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . Resistive Products Tech Note TN0002 Thin Film High-Density Integration HDI Design Guidelines Abstract The design of single- or double-sided Thin Film high density multi-layer substrates depends on a wide range
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TN0002
29-Jun-05
TN0002
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KOA DATE CODE
Abstract: KPC KOA 250L01 A4821
Text: Applications li 1 ACtermination H Reducetransmission line effects H Clock line and constant data rate line termination H Low passfilter n Powersupply filter Electrical Characteristics ResistanceRange. . . . . . . . . . . . 1OQto 15OQ CapacitanceRange ACASERIES
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25OpF
D-255788AgelingIlTZEHOE
KOA DATE CODE
KPC KOA
250L01
A4821
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486DX-CPU
Abstract: tamagawa 486DX transistors mos retrograde well 0.35
Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling
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PX4600-015AV
Abstract: "Pressure Transducers" MICRO USA Pressure Sensor px4600 PX4600-100AV shock wave sensor 100GV PX4600-100GV
Text: SOLID STATE ISOLATED TRANSDUCER IN A TRANSISTOR CASE FOR OEM AND PC BOARD MOUNTING PX4600 Series mV/V Output 0-15 to 0-300 psi 0-1 to 0-20 bar MADE IN USA NIST ߜ Small, Light Weight, OEM Package ߜ Solid State Media Isolation Suitable for use with Most Industrial
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PX4600
PX4600-015AV
"Pressure Transducers"
MICRO USA Pressure Sensor
PX4600-100AV
shock wave sensor
100GV
PX4600-100GV
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ckt of band reject filter
Abstract: AVANTEK AN-S003 AN-S005 Lumped Resonator Oscillator w17 transistor RLC bandstop filter design Avantek rf OSCILLATORS dielectric resonator avantek waveguide Avantek mixer
Text: Using Avago Technologies MSA Series MMIC Amplifiers as Frequency Converters Application Note S005 Introduction Vcc The monolithic microwave integrated circuit MMIC used in the frequency converter consists of a silicon bipolar Darlington pair with associated bias resistors. It is
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AN-S003.
5965-7391E
ckt of band reject filter
AVANTEK AN-S003
AN-S005
Lumped Resonator Oscillator
w17 transistor
RLC bandstop filter design
Avantek rf OSCILLATORS
dielectric resonator
avantek waveguide
Avantek mixer
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K612
Abstract: underfill FR4 epoxy dielectric constant 3.2 Dielectric Constant Silicon Nitride K810 FR4 substrate height and thickness ltcc chip fine line bga thermal cycling reliability
Text: Bourns Microelectronic Modules Packaging Solutions Device Mounting Technology Surface Mount Technology Surface mounting is still the most common and economical approach for many applications. Bourns® Microelectronic Module products offer the latest in surface mount technology:
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2M/MM0405
K612
underfill
FR4 epoxy dielectric constant 3.2
Dielectric Constant Silicon Nitride
K810
FR4 substrate height and thickness
ltcc chip
fine line bga thermal cycling reliability
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pn junction diode
Abstract: p-n junction diode KOA resistor NiCr8020 B77S
Text: Introduction Introduction to Thin Film Technology B Until recently thin film technology was considered esoteric and cost prohibitive for all but a few demanding applications where miniaturization and performance against cost was of paramount importance. However, with increasing demands
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PIN Diode Basics
Abstract: PIN DIODE DRIVER CIRCUITS 2n2222 transistor pin b c e 2N2894A 2N2222 application note 2n2222 transistor datasheet depletion mode current limiter LATTICE 3000 SERIES Microwave PIN diode Switching diode 0.5
Text: APPLICATION NOTE PIN Diode Basics Introduction Basic Theory—Variable Resistance A PIN diode is essentially a variable resistor. To determine the value of this resistance, consider a volume comparable to a typical PIN diode chip, say 20 mil diameter and 2 mils thick. This chip has a
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Dielectric Constant Silicon Nitride
Abstract: Amorphous AS antifuse pp186 pp151-153
Text: RELIABILITY MECHANISM OF THE UNPROGRAMMED AMORPHOUS SILICON ANTIFUSE by Richard J. Wong and Kathryn E. Gordon 7 7-15 Reprints Presented at the International Reliability and Physics Symposium April 1994 Copyright IEEE 1994 IRPS 1994 REPRINT Abstract Amorphous Silicon Antifuse Structure
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pp292-294.
QL8x12
QL12x16
QL16x24
QL24x32
400nA
200nA
100nA
140nA
82MV/cm
Dielectric Constant Silicon Nitride
Amorphous AS
antifuse
pp186
pp151-153
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RCA DISCRETE
Abstract: No abstract text available
Text: AC Terminator Applications • AC termination ■ Reduce transmission line effects ■ Clock line and constant data rate line termination ■ Low pass filter Electrical Characteristics E Resistance Range. . . . . . 10Ω to 10KΩ Capacitance Range . . . . 20pF to 220pF
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220pF
100mW
750K/500M
RCA DISCRETE
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epsilam 10 0.025
Abstract: MSA-0204 duroid-5870 MSA-0104 MSA-0135 S001 modamp E10 rt duroid size 0204 capacitor
Text: Basic MODAMP MMIC Circuit Techniques Application Note S001 Introduction and MODAMP MMIC Structure Agilent Technologies’ MSA Monolithic Silicon Amplifier series MODAMP silicon bipolar Monolithic Microwave Integrated Circuits (MMICs) are intended for use as general purpose 50 ohm gain blocks.
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5091-9312E
5967-5924E
epsilam 10 0.025
MSA-0204
duroid-5870
MSA-0104
MSA-0135
S001
modamp
E10 rt duroid
size 0204 capacitor
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Untitled
Abstract: No abstract text available
Text: P B t i GEC P L E S S E Y CT3441-2.2 MNS CHIP CAPACITORS - INTRODUCTION GPS Microwave provide a range of M.N.S. Metal/ Silicon-Nitride/Silicon Chip capacitors for use in thick and thin film hybrid circuits, from VHF to millimetre wave frequencies. Typical applications are coupling/decoupling,
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CT3441-2
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Untitled
Abstract: No abstract text available
Text: PBffl gec plessey CT3201-1.3 THIN AND THICK FILM HYBRID CIRCUITS Hybrid circuit technology is the basis upon which the final performance of any microwave component depends. Thechoice of substrata material is critical and can be alumina, glass ceramic, or quartz based. The interconnect technology is either
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CT3201-1
10OGHz.
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Untitled
Abstract: No abstract text available
Text: 0585443 03 ALPHA DE | 0 5 6 5 4 4 3 IND/ SEMICONDUCTOR 0 0 0 Q 4 C B 03E 00498 D T “ 01 ~ H J~~ High-“Q ” GaAs Tuning Diode Chips Features • High “Q ” — 4,000 to 15,000 • Wide Tuning Capacitance Variation :4/1 and 6/1 Typical • Low Leakage — Nitride-Oxide Passivated
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000Q4C
CVE7800
CVE7900
CVE7800
CVE7900
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