Untitled
Abstract: No abstract text available
Text: MMBT3906FA 40V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -40V IC = -200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile
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MMBT3906FA
DFN0806
-200mA
435mW
MMBT3904FA
AEC-Q101
X2-DFN0806-3
J-STD-020
DS36017
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Untitled
Abstract: No abstract text available
Text: BC857BFA 45V PNP SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > -45V IC = -100mA high Collector Current PD = 435mW Power Dissipation 0.48mm package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020
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BC857BFA
DFN0806
-100mA
435mW
J-STD-020
BC847BFA
MIL-STD-202,
AEC-Q101
BC857FA
DS36018
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7B SMD
Abstract: No abstract text available
Text: Surface Mount SMD Packaging Reel and Carrier Tape Specifications MINIMUM PACKING QUANTITY DFN Series (Notes 4) DFN0806 DFN0808 Bulk Type Quantity NA NA NA DFN1006 NA DFN1010 NA DFN1409, DFN1410 DFN/QFN3030 (Note 5) DFN4030-12 DFN4030-12 Type B, C, D NA NA
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DFN0806
DFN0808
DFN1006
DFN1010
DFN1409,
DFN1410
DFN/QFN3030
DFN4030-12
DFN4030-12
QFN4040
7B SMD
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Untitled
Abstract: No abstract text available
Text: BC847BFA 45V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 45V IC = 100mA high Collector Current PD = 435mW Power Dissipation 0.48mm package footprint, 16 times smaller than SOT23 Moisture Sensitivity: Level 1 per J-STD-020
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BC847BFA
DFN0806
100mA
435mW
J-STD-020
MIL-STD-202,
X2-DFN0806-3
BC857BFA
DS36019
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Untitled
Abstract: No abstract text available
Text: MMBT3904FA 40V NPN SMALL SIGNAL TRANSISTOR IN DFN0806 Features Mechanical Data • BVCEO > 40V IC = 200mA high Collector Current PD = 435mW Power Dissipation 2 0.48mm package footprint, 16 times smaller than SOT23 0.4mm height package minimizing off-board profile
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MMBT3904FA
DFN0806
200mA
435mW
MMBT3906FA
AEC-Q101
X2-DFN0806-3
J-STD-020
DS36016
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PQMD12
Abstract: No abstract text available
Text: Small & Powerful NXP MOSFETs and bipolar transistors in DFN1010 First 3 A transistors in a 1.1 mm² leadless plastic package This new product series, housed in tiny leadless packages and ideal for use in tightfootprint power management and load switches, includes small yet powerful high-Ptot
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DFN1010
OT963
DFN1010B-6
DFN0806
PQMD12
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circuit diagram wireless spy camera
Abstract: PDTB123Y IP4303CX4 dual cc BAW62 3267 tsop6 PCMF2DFN1 BST60 PUMD4 PDTB123E PDTA143
Text: Discrete Semiconductors Selection Guide 2014 Protection and signal conditioning devices, diodes, bipolar transistors, MOSFETs and thyristors. NXP’s next generation of packaging DFN Discrete Flat No-lead packages – high performance on smallest footprint
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DFN1006D-2
OD882D)
DFN1010D-3
OT1215)
DFN2020MD-6
OT1220)
DFN1608D-2
OD1608)
DSN0603
OD962)
circuit diagram wireless spy camera
PDTB123Y
IP4303CX4
dual cc BAW62
3267 tsop6
PCMF2DFN1
BST60
PUMD4
PDTB123E
PDTA143
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AA112A
Abstract: IPC-7351A
Text: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10
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AP02002)
AP02001)
IPC-7351A)
DFN0402â
DFN0603â
DFN0606â
IPC-7351A,
AA112A
IPC-7351A
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Untitled
Abstract: No abstract text available
Text: DMP22D4UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS -20V Features and Benefits RDS(ON) max ID max TA = 25°C 1.9Ω @ VGS = -4.5V -330mA 2.4Ω @ VGS = -2.5V -300mA 3.4Ω @ VGS = -1.8V -250mA 5Ω @ VGS = -1.5V -200mA •
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DMP22D4UFA
-330mA
-300mA
-250mA
-200mA
AEC-Q101
DS35766
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Untitled
Abstract: No abstract text available
Text: DMP22D4UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary N EW PRODU CT V BR DSS -20V Features and Benefits RDS(ON) max ID max TA = 25°C 1.9Ω @ VGS = -4.5V -330mA 2.4Ω @ VGS = -2.5V -300mA 3.4Ω @ VGS = -1.8V -250mA 5Ω @ VGS = -1.5V -200mA •
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DMP22D4UFA
-330mA
-300mA
-250mA
-200mA
DS35766
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