2N158
Abstract: germanium Power Transistor HD R 433 M MD-Z1 c 1031 hall effect transistor BCCMD Germanium power
Text: ● MIL.S.19500/24D 18 March 1970 SUPERSEDING MI L-s.19500/24c 14 May 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER TYPE 2N 158 This specifimticm partmenls is mandatory nnd/lgcncics for use of the Department by .11 Ocof Dcfensc.
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19500/24D
19500/24c
CCU51DERED
2N158
germanium Power Transistor
HD R 433 M
MD-Z1
c 1031 hall effect transistor
BCCMD
Germanium power
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germanium transistor pnp
Abstract: GERMANIUM TRANSISTOR 2N240 S236 de-01 germanium transistor boonton 91-6c
Text: M[l. -S-l9.il1 J@7B 196s 24 Il:tokr SUl, KrW;. DING MI1.,-S-l WiOO/25A 5 N<>vemlu.r 11359 ,(. MILITARY sEMIcoiwoucToR SPECIFICATION f3EvfcE, TRANSISTOR, PNP, TYPE 2N240 GERMANIUM, LOW-pOWER This Specification is mandatory [or use by all Departments and Agencies
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WiOO/25A
2N240
uG-491A/U,
MIL-S-19500/25B
15SUE.
10UAL
germanium transistor pnp
GERMANIUM TRANSISTOR
2N240
S236
de-01 germanium transistor
boonton 91-6c
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19Sg
Abstract: WN smd transistor 2N388 1027CB 2N388 JAN equivalent smd transistor marking da SMD TRANSISTOR MARKING km transistor smd marking mx SMD TRANSISTOR MARKING ME 2d SMD NPn TRANSISTOR
Text: MIL-S-19500/65B 19 March 1970 SUPERSEDING MIL.S.19500/65A 19 A@ MILfTARY SEMICONDUCTOR 1963 SPECIFICATION DEVICE, TRANSISTOR, NPN, GERMANIUM, SWITCHING TYPE 2N3BS This specification partnmnk is and A~mcics mundalcvy for uc of the Department by all Deof Defense.
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MIL-S-19500/65B
19500/65A
2N388.
UIL-S-19500165B
514AD
19Sg
WN smd transistor
2N388
1027CB
2N388 JAN equivalent
smd transistor marking da
SMD TRANSISTOR MARKING km
transistor smd marking mx
SMD TRANSISTOR MARKING ME
2d SMD NPn TRANSISTOR
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Application Papers
Abstract: No abstract text available
Text: Databook.fxp 1/13/99 2:10 PM Page H-13 H-13 01/99 Titles of Device Application Papers Abstracts and complete text available from InterFET upon request JFET for Completely Depleted High Resistivity Silicon V. Radeka, P. Rehak, S. Rescia Brookhaven National
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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LM 3041
Abstract: 2N325 2N326 TRANSISTOR C 2026 c 2026 y transistor MC 340 transistor c 3076
Text: I . I .“~ . MILITARY SEMICONDUCTOR DEVICE, SPECIFICATION TRANSJSIT3R, TYPE NPN, GERMANIUM, POWSR ,. 2N326 This 5Pedification is mandatory for use by all Departments and Agencies of lhe Department of Defense. 1. sCOPE 1.1 transistor. 1 This specilic.l ion cover.
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2N326
5961-0021-s)
LM 3041
2N325
2N326
TRANSISTOR C 2026
c 2026 y transistor
MC 340 transistor
c 3076
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2N539
Abstract: 2N539A mil-std-750 3076 Germanium power
Text: M IL -S-19500/38C 10 January 1969 SUPERSEDING MIL- S -19500/38B 31 January 1962 See 6 .3 . MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, POWER T V P R S 9.NR3Q A N n 2N 5SQ A This specification is mandatory for use by all Depart
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MIL-S-19500/38C
MIL-S-19500/38B
2N539
2N539A
mil-s-19500,
2N539A
mil-std-750 3076
Germanium power
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AC128 transistor
Abstract: bc649 BC646 AC188 ac187 BCS48 bc660 AC188 transistor transistor AC128 AC188 AC187
Text: Transistors germanium low/medium power transistors Dwg. ref. O utline •b z -0 ?î book 1 parts 1 and 2 V CBO V V ceo (V) M axim um Ratings lCM IC(AV) (A ) (A) Ptot at 25PC (°C> <mW) Tj m in. at •c fT ty p . (m A i (MHz) 2.5 h FE max. Special Features
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at25PC
AC128
AC187
AC188
2N1303
2N1306
2N1307
2N1309
h--22->
crt6-25
AC128 transistor
bc649
BC646
AC188 ac187
BCS48
bc660
AC188 transistor
transistor AC128
AC188
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ST8034
Abstract: ST8033 SL3015 NS1000 n BC420 2CY38 usaf521es071 NS1001 QD400-78 NS1862
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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35Om0
TZ7503
NS1234
ST8065
25MSA
ST8190
500m2
ST8191
ST8034
ST8033
SL3015
NS1000 n
BC420
2CY38
usaf521es071
NS1001
QD400-78
NS1862
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2N1011
Abstract: marking 67A
Text: MIL-S-ì9500/ó7A EL 10 October i 960 SUPERSEDING MIL-T-19500/67(SigC) 22 January 1959 MILITARY SPECIFICATION TRANSISTOR, PNP, GERMANIUM, 50-WATT TYPE 2N1011 1; 1 Scope,- This specification covers the detail requirements for germanium, PNP, power transistors for use in compatible equipment circuits. (See 3.4 and 6.2 herein.)
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MIL-S-19500/67A
MIL-T-19500/67
50-WATT
2N1011
-65to
5961-AO78
2N1011
marking 67A
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AD166
Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT
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SA2713
Abstract: BC411 55B0 2N1959 40218t ME2001 SDD821 2N1959A SA2739 TLO 64
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. 0 i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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AT400
AT401
250MSA
AT402
AT403
AT404
250M5A
250MIA
15Om0
15Om0
SA2713
BC411
55B0
2N1959
40218t
ME2001
SDD821
2N1959A
SA2739
TLO 64
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SDT1000
Abstract: mt1888 ST54 2n16 DT6104 Stc1094 1205t MHT8012 usaf520es070 usaf521es071
Text: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
SDT1000
mt1888
ST54
2n16
DT6104
Stc1094
1205t
MHT8012
usaf520es070
usaf521es071
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lm 7803
Abstract: Mextram 504 Mextram 7E21 DEVICE SILICON TWIN TRANSISTOR
Text: IEEE BCTM1.3 Explorations for High Performance SiGe-Heterojunction Bipolar Transistor Integration P. Deixler ', H.G.A. Huizing, J.J.T.M. Donkers, J.H. Klootwijk, D. Hartskeerl, W.B. de Boer ', R J. Havens, R. van der Toom, J.C.J. Paasschens, W.J. Kloosterman, J.G.M. van Berkum, D. Terpstra and J.W. Slotboom
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BAV46
Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Text: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100
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AAY34
S0D-42
BAT10
SAT11
BAT39
CV7762)
BAT39A
OD-42
BAT50R
SO-26
BAV46
bat59
Pin connection of bk 1085
BAT39
BAT52
BAV72
BAW96
BAV71
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NS1000 n
Abstract: ST8014 2CY38 usaf521es071 ST8034 AT395 NS1862 QD400-78 QD402-78 QD403-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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2N3633/52
ME8101
TIX895
1300M5A
1500MS
2500M5
2N2446
2N2379
3000MIA
4000Mt
NS1000 n
ST8014
2CY38
usaf521es071
ST8034
AT395
NS1862
QD400-78
QD402-78
QD403-78
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MHT5002
Abstract: ST 2N3053 D28A9 D11C211B20 DC5501 DC6112B MD20 MM4645 MT75 BFS86
Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. t - 40°c * - 45°C H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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NPN110.
USAF520ES070M
2N1508
50M5A
13On0
32On0
600di
2N1509
MHT5002
ST 2N3053
D28A9
D11C211B20
DC5501
DC6112B
MD20
MM4645
MT75
BFS86
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NKT 275 transistor
Abstract: 2N6135 MD14 package
Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T
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2sa525
Abstract: CA3036 2n1613 replacement CK727 D16P4 NS6205
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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MA7805
Abstract: 2N2307 2CY38 germanium low power 150mW ST8034 5E29 NS1862 sl RS40 QD401-78 QD402-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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Voff-200uV.
NS8000
NS8003
OC740
Pt-500mW;
BVCBO-12V;
50-1500KC.
Voff-100uV;
0-50KC.
MA7805
2N2307
2CY38
germanium low power 150mW
ST8034
5E29
NS1862
sl RS40
QD401-78
QD402-78
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SFT308
Abstract: SFT307 2N2625 2N2209 2N2928 7350-a GT123 2N2624 2N2626 65T1 PNP GE
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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NKT103
NKT106
NKT109
2000n
2000n
NKT123
NKT129
2G395
SFT308
SFT307
2N2625
2N2209
2N2928
7350-a
GT123
2N2624
2N2626
65T1 PNP GE
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NS1000 n
Abstract: CA3036 BVCEO-90V 2CY38 transistor A431 2n1613 replacement A431 UD1001 NS1862 QD401-78
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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BVCB0-80V
BVCE0-60V
BVEBO-15V
BVCBO-100V
BVCEO-80V
BVEB0-15V
BVCB0-60V
BVCE0-40V
MHM2101
NS1000 n
CA3036
BVCEO-90V
2CY38
transistor A431
2n1613 replacement
A431
UD1001
NS1862
QD401-78
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BC138
Abstract: 2N3520 ST8014 2CY38 BD117 OC74 2N3523 2N4241 BC138 TRANSISTOR BC222 TRANSISTOR
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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12X084B
12X165
VCEO-15V
hFE-30
ICBO-200mA
PA-300mW;
VCEO-55V;
hFE-100
Pt-25W;
VCB0-50V;
BC138
2N3520
ST8014
2CY38
BD117
OC74
2N3523
2N4241
BC138 TRANSISTOR
BC222 TRANSISTOR
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NS662
Abstract: L17D RT3500
Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,
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