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    A622

    Abstract: EDI8F3264C 4e31 29x010
    Text: W D _ EDI8F3264C I ELECTRONIC DESIGNS INC. High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module Features The EDI8F3264C is a high speed 2 megabit Static RAM module organized as 64Kx 32. This module is constructed from eight 64Kx4 Static RAMs in SOJ packages on an


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    EDI8F3264C 64Kx32 EDI8F3264C 64Kx4 oooaaoooocJoacH30oaaoo^ 0QQ1717 A622 4e31 29x010 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 Megabit High Speed CM OS SRAM D E N S E -P A C DPS256S8BN MICROSYSTEMS D ESCRIPTIO N : The DPS256S8BN is a high speed military 256K x 8 high-density, static RAM module comprised of two high speed ceramic 128K x 8 monolithicSRAM's, an advanced high-speed CMOS decoder and decoupling


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    DPS256S8BN DPS256S8BN 600-mil-wide, 32-pin A0-A17 California92841-1428 00D1720 PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM014400 IBM014400M IBM014400B IBM014400P 1 M x 4 10/10 DRAM Features • 1,048,576 word by 4 bit organization • Power Dissipation - Active max - 85 mA / 70 mA (5.0V) - 95 mA / 80 mA (3.3V) - Standby Current: TTL Inputs (max) - 2.0 mA (SP version) - 1.0 mA (LP version)


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    IBM014400 IBM014400M IBM014400B IBM014400P 27H4339 SA14-4219-03 PDF

    sm08 diode

    Abstract: SM12CXC220 CXC220 DDD171S westinghouse overload YS100
    Text: ' 34 9709955 WESTCODE DEl^TtmSS SEM ICONDUCTORS 34C 01712 D 7 ^ 0 / - 2-3 D0 Q171 5 b I \ Technical Publication WESTCODE ® SEMICONDUCTORS DFC220 Issue 1 February 1981 Fast Recovery Capsule Diode Type CXC220 860 amperes average: up to 1600 volts V RRM R atings


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    D0D1715 CXC220 DFC220 0460A 1000-2000Kgf 200AB sm08 diode SM12CXC220 DDD171S westinghouse overload YS100 PDF