SSIE1420
Abstract: SSiE1210 SSIE1120 aeg diode SSiE1410 ssie1220 ssie1110 TRA1110 SSIE1205 D6050J
Text: SILICON RECTIFIERS, UNDER 1 kV Item Number Part Number Manufacturer lo Max VRRM •FSM Max A 00 (A) 00 VF IF @ IR Test (A) IR VR 25 °C @ (A) Test (V) (A) @ T2 Test CO 'Opar Max (°C) Package Style General-Purpose, lo >= 25 A (Cont'd) . . . .5 . . . .10
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As-13
Press-13
Disc-10
203AB
DO-21
SSIE1420
SSiE1210
SSIE1120
aeg diode
SSiE1410
ssie1220
ssie1110
TRA1110
SSIE1205
D6050J
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7136a
Abstract: 4049 BP ICL7126* teledyne hamlin 3902 TC7136CPL ph meter circuit tc 4049 BP
Text: TELEDYNE 3bE D COMPONENTS • & ^ l 7 h 0 2 0007120 7 « T S C - t * 5 m O - o 5 WTELEDYNE COMPONENTS TC 7136 TC 7136A LOW POWER, 3-1/2 DIGIT ANALOG-TO-DIGITAL CONVERTERS FEA TUR ES T Y P IC A L A P P U C A T IO N S ■ ■ Thermometry ■ Bridge Readouts
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TC7136
TC7136A.
TC7136
TC7136A
r1983
TC7136A
7136a
4049 BP
ICL7126* teledyne
hamlin 3902
TC7136CPL
ph meter circuit
tc 4049 BP
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50 -60 -70 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 'C operating temperature Low power dissipation max. 660 mW active -50 version
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514400BJ/BT
514400BJL/BTL
I/02-I/04
fl235b05
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OA206
Abstract: DA000 stud type diodes DD716 DD713 DA002 DA2068 DA001 DD710 DD7120
Text: Rectifier diodes — generaljpurpose types cont'd Vr P h o to g r a p h s a c tu a l size T I fsm I f (AV) @ T"stud I frm max. max. max. ( 1 0 ms) max. max. max. ( 1 0ms) @ Tj = 25°C V V A °c DD7120(1 ) 50 DD7121 (1 ) 100 DD7123(1) 200 DD7126(1 ) 400 50
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DD7120
DD7121
DD7123
DD7126
DD710
DD711
DD713
DD716
DA000
DA001
OA206
stud type diodes
DA002
DA2068
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dg7-1
Abstract: No abstract text available
Text: SIEM ENS 1M X 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM HYB 514400BJ/BT -50/-60/-70 HYB 514400BJL/BTL -50/-60/-70 Advanced Inform ation • 1 048 576 w ords by 4-bit organization 0 to 70 'C operating tem perature • Fast access and cycle tim e RAS access time:
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514400BJ/BT
514400BJL/BTL
I/02-I/04
fi235bDS
00713M2
dg7-1
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D0713
Abstract: siemens 10e 514100
Text: SIEM E N S 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 514100BJ/BT -50/-60/-70 HYB 514100BJL/BTL -50/-60/-70 Advanced Inform ation • 4 194 304 words by 1-bit organization • 0 to 70 “C operating temperature • Fast access time RAS access time:
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514100BJ/BT
514100BJL/BTL
HYB5141OOBJ/BT/BJL/BTL
fl23SbOS
D0713
siemens 10e
514100
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B0588
Abstract: 42k4 PD17204 UPD 74H
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿UPD 17204 4-BIT SINGLE-CHIP MICROCONTROLLER WITH 8K-BIT STATIC RAM AND 3-CHANNEL TIMER FOR INFRARED REMOTE CONTROLLER DESCRIPTION The /iPD 17204 is a 4-bit single-chip m icrocontroller fo r infrared rem ote controller. Integrated on the same
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uPD17204
iPD17204
/JS5A10AS17K
AS17K)
PC-9800
S5A13AS17K
J/S7B10AS17K
AS17204)
S7B10AS17204
B0588
42k4
PD17204
UPD 74H
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Untitled
Abstract: No abstract text available
Text: SIEMENS 512kx8-Bit Dynamic RAM HYB 514800BJ -60/-70/-80 Advanced Information • 512 288 words by 8-bit organization Low power dissipation max. 605 mW active -60 version max. 550 mW active (-70 version) max. 468 mW active (-80 version) • 0 to 70 "C operating temperature
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512kx8-Bit
514800BJ
/77Z77/
77//////7777t
k/777777/.
AE35L
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SO47
Abstract: DD711 DD713 2S54 DD710 DD716 SO-47
Text: D fll LUCAS S T A B I L I T Y ELEK LTD 81C 0 0 0 1 5 SbQ7D13 GÜQÜD1S 7 » L U C B D D S IL IC O N D IF F U S E D J U N C T IO N R E C T IF IE R S DD710 50-400V SERIES P E A K R E V E R S E V O LT A G E The D D 7 1 0 series rectifiers are case rated, 3 5 ampere silicon diffused junction, stud mounted
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Sb07D13
0-400V
DD710
SO-47
AU151
SO47
DD711
DD713
2S54
DD716
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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oti 2168
Abstract: No abstract text available
Text: /= 7 ^7#. S G S -T H O M S O N HD g[S IIUl(@inS®iD i S T 486D X 4V 75.100 & 120 MHz Clock Tripled 3.45 Volt 486 CPU PRELIMINARY DATA • IMPROVED 486DX4 PERFORMANCE ■ ON-CHIP 8-KBYTE WRITE-BACK CACHE - Clocktripled core sp eed s up to 120 M H z - Industry-wide w rite-back chipset support
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486DX4
0Q71327
oti 2168
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P130T
Abstract: Z57F
Text: ¿¿PD75112, 75116 4-Bit Single-Chip Microcomputer Data Sheet Description Please refer to "Quality Grade on NEC Semicon ductor Devices" Document number IEI-1209 published by NEC Corporation to know the speci fication of quality grade on the devices and its
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PD75112,
IEI-1209)
/zPD75116
/iPD75116
tPD75108.
PD75116
mPD751
EEU-1346
EEU-1343
EEU-1291
P130T
Z57F
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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