DD40574 Search Results

IRF 640 mosfet

Abstract: SSS5N80A MOSFET 150 N IRF
Text: SSS5N80A A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Lower Leakage Current : 25 ^A Max. @ VDS = 800V ■ Low RDS(0N) : 1.824 Q (Typ.) 2.2 £2 < ■ II Improved Gate Charge Extended Safe Operating Area