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    DD 128 TRANSISTOR Search Results

    DD 128 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DD 128 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    823B

    Abstract: DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook
    Text: MOTOROLA SEMICONDUCTOR GENERAL INFORMATION Packaging & Case Information 84-Pin PLCC CASE 780A-01 ISSUE A FN SUFFIX 181-Pin PGA CASE 795A–02 ISSUE A HI SUFFIX 128-Pin QFP CASE 862A-02 ISSUE B DD SUFFIX 208-Pin QFP CASE 872A-01 ISSUE TBD DK SUFFIX 160-Pin QFP


    Original     		PDF 84-Pin 80A-01 181-Pin 128-Pin 62A-02 208-Pin 72A-01 160-Pin 64A-03 224-Pin 823B DL201 motorola handbook 84 pin plcc ic base Reliability and quality handbook

    STP32N05L

    Abstract: STP32N05LFI
    Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP32N05L STP32N05LFI 100oC 175oC O-220 STP32N05L STP32N05LFI

    STP32N06L

    Abstract: STP32N06LFI
    Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP32N06L STP32N06LFI 100oC 175oC O-220 STP32N06L STP32N06LFI

    STP32N06L

    Abstract: STP32N06LFI
    Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI

    STP32N06L

    Abstract: STP32N06LFI
    Text: STP32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N06LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP32N06L STP32N06LFI 100oC O-220 STP32N06L STP32N06LFI

    STP32N05L

    Abstract: STP32N05LFI
    Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP32N05L STP32N05LFI 100oC O-220 STP32N05L STP32N05LFI

    STP32N05L

    Abstract: STP32N05LFI
    Text: STP32N05L STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N05L STP32N05LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.055 Ω < 0.055 Ω 32 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF STP32N05L STP32N05LFI 100oC O-220 STP32N05L STP32N05LFI

    spp77n05

    Abstract: Q67040-S4001-A2 BUZ 32 SMD
    Text: BUZ 100 S SPP77N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 100 S 55 V


    Original     		PDF SPP77N05 O-220 Q67040-S4001-A2 30/Jan/1998 spp77n05 Q67040-S4001-A2 BUZ 32 SMD

    TE1509

    Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
    Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of


    Original     		PDF TE1309 TE1400 TE1401 TE1402 TE1403 TE1404 TE1407 TE1408 TE1409 TE1410 TE1509 TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE

    BSL215C

    Abstract: No abstract text available
    Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V VGS=±4.5 V 150 140 mW VGS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel VDS · Enhancement mode RDS on ,max · Super Logic level (2.5V rated) · Avalanche rated


    Original     		PDF BSL215C IEC61249-2-21 H6327: BSL215C

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V5 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration


    Original     		PDF MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00

    Untitled

    Abstract: No abstract text available
    Text: MAGX-000912-500L00 MAGX-000912-500L0S GaN on SiC HEMT Pulsed Power Transistor 500 W Peak, 960 to 1215 MHz, 128 s Pulse, 10% Duty Features Rev. V3 MAGX-000912-500L00 • GaN on SiC Depletion-Mode Transistor Technology  Internally matched  Common-Source configuration


    Original     		PDF MAGX-000912-500L00 MAGX-000912-500L0S MAGX-000912-500L00

    BSL215C

    Abstract: HLG09283 L6327
    Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)


    Original     		PDF BSL215C L6327: BSL215C HLG09283 L6327

    BSL215C

    Abstract: HLG09283 L6327
    Text: BSL215C OptiMOS 2 + OptiMOS™-P 2 Small Signal Transistor Product Summary Features P N -20 20 V V GS=±4.5 V 150 140 mΩ V GS=±2.5 V 280 250 -1.5 1.5 • Complementary P + N channel V DS · Enhancement mode R DS on ,max · Super Logic level (2.5V rated)


    Original     		PDF BSL215C L6327: BSL215C HLG09283 L6327

    Untitled

    Abstract: No abstract text available
    Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold


    Original     		PDF P4525-ND P5182-ND 1-877-GOLDMOS 1522-PTF

    10147

    Abstract: GE capacitor 2R13-6 G200
    Text: PTF 10147 GOLDMOS Field Effect Transistor 10 Watts, 1.0 GHz Description • The PTF 10147 is a 10–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates with 58% efficiency and 16.5 dB gain. Nitride surface passivation and full gold


    Original     		PDF P4525 P5182 1-877-GOLDMOS 1522-PTF 10147 GE capacitor 2R13-6 G200

    S178A

    Abstract: VIDEO PULSE GENERATOR
    Text: S178A Video Pulse Generator DIP 28 The S 178 A is an MOS circuit using p-channel metal-gate-technology with enhancement and depletion transistors, featuring the following technical characteristics: The video pulse generator produces the sync, control, and erase signals required for the


    OCR Scan     		PDF S178A S178A VIDEO PULSE GENERATOR

    t750

    Abstract: ds 300 u810
    Text: an A M P com pany RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 Features • • • • • • N-Channel Enhancem ent Mode Device Meets CECOM Drawing A3012711 D esigned for Frequency H opping Systems 30-90 MHz I.ower Capacitances for Broadband O peration


    OCR Scan     		PDF A3012711 FH2114 t750 ds 300 u810

    Untitled

    Abstract: No abstract text available
    Text: *57 SGS-THOMSON iL iO M K I stp32N06L STP32N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP32N06L STP32N 06LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF 32N06L STP32N06LFI STP32N06L STP32N 06LFI

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 349 ^ D S on 100 V 32 A 0.06 n Maximum Ratings Parameter Continuous drain current, Tc = 27 "C Pulsed drain current, Tc = 25 "C Avalanche current, limited by 7]max


    OCR Scan     		PDF O-218 C67078-S3113-A2

    Untitled

    Abstract: No abstract text available
    Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos fc flDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit A 7 b = 27 -C


    OCR Scan     		PDF O-218AA C67078-S3113-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T

    2SC9013

    Abstract: 2sc9013 transistor UM66T 2SC901 UM66T Series UM66 um66 music generator
    Text: UM66T Series Simple Melody Generator Features • ■ ■ ■ ■ ■ 64-note ROM m em ory ■ 1.3V to 3.3V operating voltage and low power consum ption ■ Dynamic speaker can be driven with an external NPN transistor OSC. resistor is built-in One-shot m ode o r level-hold m ode can be selected


    OCR Scan     		PDF UM66T 64-note 2SC9013 2SC9013 UM66T 2sc9013 transistor 2SC901 UM66T Series UM66 um66 music generator

    STP32N05L

    Abstract: No abstract text available
    Text: *57 TYPE STP32N05L STP32N 05LFI • • . ■ ■ . ■ ■ . SGS-THOMSON iL iO M K I stp32Nosl STP32N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 50 V 50 V < 0.055 a < 0.055 a 32 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y


    OCR Scan     		PDF 32Nosl STP32N05LFI STP32N05L STP32N 05LFI

    MOTOROLA POWER TRANSISTOR lc 945

    Abstract: zener ap 474 940 629 MOTOROLA 113
    Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.


    OCR Scan     		PDF RF158/D MOTOROLA POWER TRANSISTOR lc 945 zener ap 474 940 629 MOTOROLA 113