TE1509
Abstract: TE1055 30D8 DD 127 D TRANSISTOR te1157.1 TE1064 TE1068 TE1090 TE1105 TYPE TE
Text: Type TE Vishay Sprague Aluminum Capacitors LITTL-LYTIC Electrolytics FEATURES • Proven dependable performance in the industrial and electronic equipment with either transistor or modified electron-tube circuits • All terminal connections welded, eliminating possibility of
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TE1309
TE1400
TE1401
TE1402
TE1403
TE1404
TE1407
TE1408
TE1409
TE1410
TE1509
TE1055
30D8
DD 127 D TRANSISTOR
te1157.1
TE1064
TE1068
TE1090
TE1105
TYPE TE
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dd 127
Abstract: GS 069 CHM13N07PAPT motor mosfet 55a6m
Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CHM13N07PAPT CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. TO-252A FEATURE * Small package. TO-252A
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CHM13N07PAPT
O-252A
O-252A)
dd 127
GS 069
CHM13N07PAPT
motor mosfet
55a6m
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CHM13N07PAGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM13N07PAGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 70 Volts CURRENT 11 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE
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CHM13N07PAGP
O-252)
CHM13N07PAGP
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DD 127 D TRANSISTOR
Abstract: STP4NA100
Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STP4NA100
100oC
O-220
DD 127 D TRANSISTOR
STP4NA100
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DD 127 D TRANSISTOR
Abstract: STP4NA100
Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC
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STP4NA100
O-220
DD 127 D TRANSISTOR
STP4NA100
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DD 127 D TRANSISTOR
Abstract: STP4NA100
Text: STP4NA100 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP4NA100 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 1000 V <3. 5 Ω 4.2 A TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100 oC
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STP4NA100
O-220
DD 127 D TRANSISTOR
STP4NA100
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JMC5701
Abstract: GPS-101-2
Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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PCS6106
1-877-GOLDMOS
1522-PTF
JMC5701
GPS-101-2
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Untitled
Abstract: No abstract text available
Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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PCS6106-ND
220QBK-ND
1-877-GOLDMOS
1522-PTF
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DD 127 D TRANSISTOR
Abstract: No abstract text available
Text: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.
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STU/D9916L
O-252
O-251
O-252AA
U/D9916L
Tube/TO-252
O-252
DD 127 D TRANSISTOR
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H5NA100FI
Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA
Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW5NA100
STH5NA100FI
W5NA100
H5NA100FI
100oC
O-247
ISOWATT218
H5NA100FI
h5na100
TRANSISTORS 132 GD
W5NA100
ST C 236 DIODE
H5NA100F
STH5NA100FI
STW5NA100
O-247
h5NA
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JMC5701
Abstract: Y 335
Text: GOLDMOS PTF 10053 Field Effect Transistor 12 Watts, 2.0 GHz Description The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold
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PCS6106-ND
220QBK-ND
1-877-GOLDMOS
1522-PTF
JMC5701
Y 335
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STH5NA100FI
Abstract: STW5NA100 TRANSISTORS 132 GD
Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW5NA100
STH5NA100FI
O-247
ISOWATT218
STH5NA100FI
STW5NA100
TRANSISTORS 132 GD
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STH5NA100FI
Abstract: STW5NA100
Text: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID STW5NA100 STH5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING
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STW5NA100
STH5NA100FI
O-247
ISOWATT218
STH5NA100FI
STW5NA100
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microsoft optical mouse microcontroller
Abstract: logitech optical mouse microcontroller 4 pin phototransistor Logitech logitech G5 mouse controller 4 pin phototransistor for Mouse Logitech Optical mouse optical principle mechanical mouse microcontroller mechanical mouse logitech optical mouse RS232 MECHANICAL MOUSE
Text: National Semiconductor Application Note 681 Alvin Chan June 1990 ABSTRACT The mouse is a very convenient and popular device used in data entry in desktop computers and workstations For desktop publishing CAD paint or drawing programs using the mouse is inevitable This application note will describe
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COP822C
20-3A
microsoft optical mouse microcontroller
logitech optical mouse microcontroller
4 pin phototransistor Logitech
logitech G5 mouse controller
4 pin phototransistor for Mouse Logitech
Optical mouse optical principle
mechanical mouse microcontroller
mechanical mouse
logitech optical mouse
RS232 MECHANICAL MOUSE
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2SC3113
Abstract: No abstract text available
Text: 2SC3113 TO SH IBA 2 S C 3 1 13 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE Unit in mm FOR AUDIO AMPLIFIER AND SWITCHING APPLICATIONS • • • • High DC Current Gain High Breakdown Voltage High Collector Current Small Package 4 .2 M A X . hpE —600~3600
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2SC3113
150mA
2SC3113
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MOTOROLA POWER TRANSISTOR lc 945
Abstract: zener ap 474 940 629 MOTOROLA 113
Text: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.
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RF158/D
MOTOROLA POWER TRANSISTOR lc 945
zener ap 474
940 629 MOTOROLA 113
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327
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Q67000-S215
OT-223
E6327
053SbOS
fl235bOS
0GflbG22
D0flb023
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MARKING code WMM RF transistor
Abstract: No abstract text available
Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich Halbleiter, M arketing-Kom m unikation,
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P-MQFP-44-2
GPM05622
MARKING code WMM RF transistor
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cd40118
Abstract: CD4081 C04011B 74LS CD4071B CD4071BM CD4081B CD4081BM
Text: , February 1988 CD4071BM/CD4071BC Quad 2-Input OR Buffered B Series Gate CD4081BM /CD4081BC Quad 2-Input AND Buffered B Series Gate General Description Features These quad gates are monolithic complementary MOS CMOS integrated circuits constructed with N- and P-channel enhancement mode transistors. They have equal source
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CD4071BM/CD4071BC
CD4081BM/CD4081
V-10V-15V
cd40118
CD4081
C04011B
74LS
CD4071B
CD4071BM
CD4081B
CD4081BM
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SMD Transistor NI
Abstract: smd marking AB 6 PIN siemens off saw filter HSYNC, VSYNC, DE, input, output digital tv
Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9361 D atasheet 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbieiter, Marketlng-Kommunikation, BalanstraBe 73,
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P-MGFP-44-2
441Index
GPM05622
SMD Transistor NI
smd marking AB 6 PIN
siemens off saw filter
HSYNC, VSYNC, DE, input, output digital tv
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BUZ80AFI
Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
Text: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY
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BUZ80A
BUZ80AFI
BUZ80A
BUZ80AFI
800Vds
7T5ci237
045b45
BUZ80A/BUZ80AFI
BUZ80AF
k2800
Y125
dg45b
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2SK790
Abstract: HSO16 2SK79 1SV35
Text: TOSHIBA {DISCRETE/OPTO} 9097250 T O S H IB A TT dF § T D T 725G O D l bTSS T J T O S H IB A D I S C R E T E /OPTO J T0SHIBA FIELD effect TRANSISTOR 2 S IC 7 9 0 99D 1 6 7 5 5 SEMICONDUCTOR SILICON N CHANNEL MOS TYPE C7T-MOSI T-3'?-13 TECHNICAL DATA •INDUSTRIAL APPLICATIONS
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TDT725G
300uA
EGA-2SK790-A
EGA-2SK790-5
2SK790
HSO16
2SK79
1SV35
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SIEMENS 3 TB 40 17 - 0A
Abstract: SIEMENS 3 TB 40 17 - 0B SIEMENS 3 TB 40 12 - 0A
Text: ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the software system FrameMaker Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73,
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P-MQFP-44-2
GPM05622
SIEMENS 3 TB 40 17 - 0A
SIEMENS 3 TB 40 17 - 0B
SIEMENS 3 TB 40 12 - 0A
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SMD transistor MARKING code RIP 31
Abstract: No abstract text available
Text: SIEMENS ICs for Consumer Electronics DDC-PLUS-Deflection Controller SDA 9362 D a ta s h e e t 1998-02-01 Edition 1998-02-01 This edition was realized using the softw are system FrameMaker Published by Siem ens AG, Bereich H albleiter, M arketing-Kom m unikation,
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UET10276
QFP-44-2
44Index
GPM05622
SMD transistor MARKING code RIP 31
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