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DCR5980A Abstract: DCR5980A12 DCR5980A14 DCR5980A16 DCR5980A18 DCR5980Z Text: DCR5980A DCR5980A Phase Control Thyristor Replaces DCR5980Z issue December 2002, version DS5482-2.0 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction PDS5649-1.0 August 2003 KEY PARAMETERS VDRM max IT(AV)	Original	DCR5980A DCR5980Z DS5482-2 PDS5649-1 8000A DCR5980A18 DCR5980A16 DCR5980A14 DCR5980A12 DCR5980A DCR5980A12 DCR5980A14 DCR5980A16 DCR5980A18	PDF
Untitled Abstract: No abstract text available Text: DCR5980A DCR5980A Phase Control Thyristor Replaces DCR5980Z issue December 2002, version DS5482-2.0 FEATURES • Double Side Cooling ■ High Surge Capability ■ Low Inductance Internal Construction PDS5649-1.0 August 2003 KEY PARAMETERS VDRM max IT(AV)	Original	DCR5980A DCR5980Z DS5482-2 PDS5649-1 8000A 000V/Â DCR5980A18 DCR5980A16 DCR5980A14	PDF
DCR5980A18 Abstract: DCR5980A12 DCR5980A14 DCR5980A16 Text: DCR5980A18 Phase Control Thyristor DS5649 1.1 January 2007 LN25138 FEATURES KEY PARAMETERS • Double Side Cooling • High Surge Capability • Low Inductance Internal Construction VDRM IT(AV) ITSM dV/dt* dI/dt 1800V 5985A 98000A 1000V/µs 250A/µs APPLICATIONS	Original	DCR5980A18 DS5649 LN25138) 8000A DCR5980A16 DCR5980A14 DCR5980A12 500mA, DCR5980A18 DCR5980A12 DCR5980A14 DCR5980A16	PDF
Tag 225-600 Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half	Original	DS5766-4. Tag 225-600 IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes	PDF
DIODE GE Abstract: DCR604SE DCR504S GE brand thyristor thyristor Vtm 6.5 DCR504ST DCR720E DCR803SG DCR806SG DCR818SG Text: AN5001 Application Note AN5001 Use Of The VTO, rT On-state Characteristic Model Application Note Replaces February 2003 version, AN5001-6.0 AN5001-7.0 February 2004 The use of the VTO, rT on-state characteristic model and a more accurate alternative. where A, B, C and D are constants with values specific to the	Original	AN5001 AN5001 AN5001-6 AN5001-7 DIODE GE DCR604SE DCR504S GE brand thyristor thyristor Vtm 6.5 DCR504ST DCR720E DCR803SG DCR806SG DCR818SG	PDF
DCR2950W Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half	Original	DS5766-4. DCR2950W igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor	PDF