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    DC VARIABLE POWER WITH 2N3055 Search Results

    DC VARIABLE POWER WITH 2N3055 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    DC VARIABLE POWER WITH 2N3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3055G

    Abstract: MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 2N3055 MJ2955 transistor npn 2n3055g
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage −


    Original     		PDF 2N3055 MJ2955 O-204AA 2N3055G MJ2955 2n3055 200 watts amplifier diagram MJ2955G OF transistor 2n3055 to-3 package MJ-20 TO-204AA transistor 2N30 transistor npn 2n3055g

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055/D* 2N3055/D

    2n3055 malaysia

    Abstract: DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve
    Text: 2N3055, MJ2955 Complementary Power Transistors Designed for use in general-purpose amplifier and switching applications. Features: • Power dissipation - PD = 115W at TC = 25°C. • DC current gain hFE = 20 to 70 at IC = 4.0A. • VCE sat = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.


    Original     		PDF 2N3055, MJ2955 400mA. 2N3055 2n3055 malaysia DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2n3055 pnp MJ2955 300 watts amplifier 2n3055 IC 2N3055 curve 2N3055 MJ2955 TRANSISTOR 2n3055 collector characteristic curve

    2N3055

    Abstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2n3055 amplifier 2N3055 transistor data transistor 2n3055 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 safe operating area
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


    Original     		PDF 2N3055, MJ2955 2N3055 2N3055 DC variable power with 2n3055 2N3055G power transistor 2n3055 2n3055 amplifier 2N3055 transistor data transistor 2n3055 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 safe operating area

    2N3055 MOTOROLA

    Abstract: 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 MOTOROLA 2N3055 power amplifier circuit MJ2955 300 watts amplifier MJ2955 2n3055 200 watts amplifier 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 power transistor 2n3055 pin out TRANSISTOR 2n3055 2N3055/MJ2955 2N3055 power circuit

    2N3055

    Abstract: 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *Motorola Preferred Device • DC Current Gain — hFE = 20 – 70 @ IC = 4 Adc


    Original     		PDF 2N3055/D 2N3055 MJ2955 2N3055/D* 2N3055 2n3055 motorola 2N3055 power amplifier circuit 2n3055 pnp 2N3055 power circuit 2N3055 NPN MOTOROLA POWER TRANSISTOR pin out TRANSISTOR 2n3055 2N3055-D 2n3055 circuit 2n3055 application

    MJ15016

    Abstract: 2N3055AG MJ15015 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. O-204AA 2N3055AG 2N3055A MJ15015G MJ15016G 2N3055 NPN Transistor 2N3055 2N3055A 2n3055 MJ-15016

    2n3055

    Abstract: 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 MJ2955 300 watts amplifier
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


    Original     		PDF 2N3055 MJ2955 2N3055/D 2N3055G 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 300 watts amplifier circuit diagram 2n3055 application note 2N3055 power circuit MJ2955 2n3055 200 watts amplifier MJ2955 300 watts amplifier

    2n3055

    Abstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc


    Original     		PDF 2N3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram

    MJ2955 300 watts amplifier circuit diagram

    Abstract: MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • http://onsemi.com


    Original     		PDF 2N3055, MJ2955 2N3055/D MJ2955 300 watts amplifier circuit diagram MJ2955 2n3055 200 watts amplifier MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier 2N3055 power amplifier circuit 2N3055 2n3055 application note 2n3055 circuit diagram 2N3055 power amplifier circuit diagram MJ2955 TRANSISTOR

    MJ15016

    Abstract: 2n3055a MJ15015 2N3055 NPN Transistor
    Text: ON Semiconductort NPN 2N3055A Complementary Silicon High−Power Transistors MJ15015 * PNP MJ15016 * . . . PowerBaset complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


    Original     		PDF 2N3055. 2N3055A MJ15015 MJ15016 2N3055A MJ15015, MJ15015 MJ15016 2N3055 NPN Transistor

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit
    Text: 2N3055 NPN , MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − •


    Original     		PDF 2N3055 MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit diagram 2n3055 circuit diagram 2n3055 pin out diagram pin out TRANSISTOR 2n3055 2N3055 typical applications 2N3055 power amplifier circuit 2n3055 circuit 2N3055 power circuit

    2n3055 application note

    Abstract: 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055
    Text: 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general−purpose switching and amplifier applications. • DC Current Gain − hFE = 20 −70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − • • http://onsemi.com


    Original     		PDF 2N3055, MJ2955 2N3055/D 2n3055 application note 2N3055 power amplifier circuit 2N3055 power amplifier circuit diagram 2N3055 power circuit 2n3055 circuit diagram MJ2955 2n3055 200 watts amplifier diagram MJ2955 300 watts amplifier circuit diagram DC variable power with 2n3055 MJ2955 2n3055 200 watts amplifier 2N3055

    2N3055 power circuit

    Abstract: 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 JAPAN 2n3055 equal DC variable power with 2n3055 2N3055 MJ2955 2n3055 circuit mj2955
    Text: ON Semiconductort NPN 2N3055 * PNP MJ2955 * Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. *ON Semiconductor Preferred Device • DC Current Gain — hFE = 20–70 @ IC = 4 Adc • Collector–Emitter Saturation Voltage —


    Original     		PDF 2N3055 MJ2955 r14525 2N3055/D 2N3055 power circuit 2N3055 power amplifier circuit 2N3055 typical applications 2N3055 2N3055 JAPAN 2n3055 equal DC variable power with 2n3055 2N3055 MJ2955 2n3055 circuit mj2955

    2N3055* motorola

    Abstract: mj15016 motorola 2n3055 motorola 1N6073 2N3055 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A
    Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


    Original     		PDF 2N3055A/D 2N3055A MJ15015* 2N3055 MJ2955. MJ2955A MJ15016* 2N3055A/D* 2N3055* motorola mj15016 motorola 2n3055 motorola 1N6073 2N3055A MJ15015 MJ15016 MJ2955 MJ2955A

    mj15015g

    Abstract: No abstract text available
    Text: 2N3055AG NPN , MJ15015G (NPN), MJ15016G (PNP) Complementary Silicon High-Power Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or


    Original     		PDF 2N3055AG MJ15015G MJ15016G 2N3055. 2N3055AG MJ15015G, MJ15016G 2N3055A/D mj15015g

    MJ15015

    Abstract: 2n3055a datasheet 2n3055AG MJ15016 MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2n3055a datasheet 2n3055AG MJ15015 TRANSISTOR MJ15015G MJ15015 application note 1N6073 2N3055 2N3055AG

    MJ15015

    Abstract: 2N3055A MJ15016 MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055
    Text: 2N3055A NPN MJ15015, MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015, MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D 2N3055A MJ15015G MJ15015 application note 2N3055AG MJ15016G 1N6073 2N3055 DC variable power with 2n3055

    Untitled

    Abstract: No abstract text available
    Text: 2N3055A NPN , MJ15015 (NPN), MJ15016 (PNP) MJ15015 and MJ15016 are Preferred Devices Complementary Silicon High−Power Transistors These PowerBaset complementary transistors are designed for high power audio, stepping motor and other linear applications. These


    Original     		PDF 2N3055A MJ15015 MJ15016 MJ15015 MJ15016 2N3055. 2N3055A/D

    2N3055 power amplifier circuit

    Abstract: 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955
    Text: MOTOROLA Order this document by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2 N3 0 5 5 * Com plem entary Silicon Power Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • ‘ Motorola Preferred Device


    OCR Scan     		PDF 2N3055/D J2955 2N3055 power amplifier circuit 2n3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR 2N3055 2n3055 circuit 2N3055 power circuit 2N3055 typical applications 2N3055-1 TRANSISTOR 2n3055 TRANSISTOR MJ2955

    J2955A

    Abstract: MJ15015 MJ15016 2N3055A MJ2955A Mj2955 power transistor 2n3055 motorola 2N305 2N3055 NPN MOTOROLA POWER TRANSISTOR
    Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Com plem entary Silicon H igh-Pow er Transistors 2 N3 05 5A . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


    OCR Scan     		PDF 2N3055A/D 2N3055 MJ2955. J2955A J15016* O-204AA J2955A MJ15015 MJ15016 2N3055A MJ2955A Mj2955 power transistor 2n3055 motorola 2N305 2N3055 NPN MOTOROLA POWER TRANSISTOR

    2N30ss

    Abstract: MJ15015 MJ15016 2N3055A MJ15015 TRANSISTOR 70 M 15 B MJ2955 TRANSISTOR 2n3055 audio output circuit
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA UDII Complementary Silicon High-Power Transistors 2N3055A . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc-to-dc converters, Inverters, or


    OCR Scan     		PDF 2N3055 MJ2955. 2N3055A J15015* J2955A J15016* 2N305SA, MJ2955A MJ15015, MJ15016 2N30ss MJ15015 MJ15016 MJ15015 TRANSISTOR 70 M 15 B MJ2955 TRANSISTOR 2n3055 audio output circuit

    2N3065

    Abstract: MJ16015 mj15015 MJ15016 2N3055A 2N3065A 3055A 2N3055* motorola
    Text: D FJt.3t.7SS4 n O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA, SC XSTRS/R D 96D 8 0 2 7 5 F DDflOaTS T r i ^ b L ~ r ~ 3 3 - s ^ MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA NPN PNP 2N3055A MJ15015 MJ2955A MJ15016 C O M P L E M E N T A R Y S IL IC O N HIGH-POW ER TR A N SISTO R S


    OCR Scan     		PDF 2N3055A MJ15015 MJ2955A MJ15016 2N3065 MJ16015 mj15015 MJ15016 2N3065A 3055A 2N3055* motorola

    2n3055a

    Abstract: mj15015 3055a MJ15016 MJ15015 TRANSISTOR MJ-15015
    Text: MOTOROLA Order this document by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA I I D Complementary Silicon High-Power Transistors 2N3055A . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


    OCR Scan     		PDF 2N3055A/D 2N3055 MJ2955. 2N3055A J15015* MJ2955A J15016* mj15015 3055a MJ15016 MJ15015 TRANSISTOR MJ-15015