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    Advantech Co Ltd SOM-DB5700G-00A2E

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    Advantech Co Ltd SOM-DB5700G-U0A2E

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    Mouser Electronics SOM-DB5700G-U0A2E
    • 1 $348.68
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    DB5700 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DB-57006-600 STMicroelectronics RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs Original PDF

    DB5700 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PD57006

    Abstract: B10TJ DB-57006-600 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50
    Text: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg


    Original     		PDF DB-57006-600 PD57006 600MHz DB-57006-600 PD57006 B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 3214W-1-103E GRM42-6C0G151J50

    zener 20w smd diode 1w

    Abstract: No abstract text available
    Text: DB-57006-600 RF POWER amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 300 - 600MHz ■ Supply voltage: 26V ■ Output power: 1W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1W avg


    Original     		PDF DB-57006-600 PD57006 600MHz DB-57006-600 zener 20w smd diode 1w

    PD57006E

    Abstract: DB-57006-600 PD57006-E DB5700
    Text: DB-57006-600 schematic 1+ 2- R2 + B2 C3 C4 + B1 C5 Vcc MSub C10 FR4 H=60 mil D1 C2 R1 C1 L1 R3 TL4 C8 RFin TL1 C6 TL2 L2 TL3 LDMOS PD57006-E L3 C9 TL5 C7 TL6 RFout


    Original     		PDF DB-57006-600 PD57006-E PD57006E PD57006-E DB5700

    RF5000

    Abstract: GNS7560 DB5700 M570 Rx diversity GRAKE2 HSPA imei Ericsson HSPA modem
    Text: M570 HSPA+ Top-speed mobile broadband on the HSPA track ST-Ericsson is driving Mobile Broadband for the mass market through the low power 21Mbp/s HSPA+ modem platform, M570. Stay online wherever you are. M570 fits into everyone’s moving lifestyle targeting notebooks,


    Original     		PDF 21Mbp/s M570FL AB5000 RF5000 GNS7560 DB5700 M570 Rx diversity GRAKE2 HSPA imei Ericsson HSPA modem

    GNS7560

    Abstract: M570 GRAKE2 Ericsson GSM Modem USB imei cellular receiver, qam RF5000 broadband usb gps modem
    Text: M570 HSPA+ Top-speed mobile broadband on the HSPA track ST-Ericsson is driving Mobile Broadband for the mass market through the low power 21Mbps HSPA+ modem platform, M570. Stay online wherever you are. M570 fits into everyone’s moving lifestyle targeting notebooks,


    Original     		PDF 21Mbps GNS7560 DB5700 AB5000 RF5000 M570FL M570 GRAKE2 Ericsson GSM Modem USB imei cellular receiver, qam RF5000 broadband usb gps modem

    SD2942

    Abstract: PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E
    Text: Radio frequency technologies for innovative solutions Selection guide December 2009 www.st.com/rf DMOS ISM & FM broadcast applications Part number Frequency MHz Pout (W) VDD (V) Gain (dB) Efficiency (%) Package SD2900 400 5 28 13.5 45 M113 SD2902 400 15


    Original     		PDF SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2942 PD85035-E DB-85006L-960 STAC244B SD2941-10 SD57045 DB-85035-860 PowerSO-10RF PD20010-E PD55015-E

    capacitor 220 uf

    Abstract: 103 capacitor zener diode 1206 capacitor 103 ATC 221 B10T DATA SHEET TRANSMISSION LINE "Zener Diode" EXCELDRC35C LDMOS
    Text: DB-57006-600 BOM Component ID Description Manufacturer Part Code B1 Ferrite Bead Value Case size PANASONIC EXCELDRC35C B2 Ferrite Bead PANASONIC EXCELDRC35C C1, C2 Capacitor 150 pF 1206 MURATA GRM42-6C0G151J50 C3 Capacitor 1 nF 1206 MURATA GRM42-6C0G102J50


    Original     		PDF DB-57006-600 EXCELDRC35C GRM42-6C0G151J50 GRM42-6C0G102J50 GRM42-6X7R104K50 EEVHB1V100P OD110 BZX28C5V1 capacitor 220 uf 103 capacitor zener diode 1206 capacitor 103 ATC 221 B10T DATA SHEET TRANSMISSION LINE "Zener Diode" EXCELDRC35C LDMOS

    3214W-1-103E

    Abstract: B10TJ DB-57006-600 EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57006 capacitor 150 pf
    Text: DB-57006-600 RF power amplifier using 1 x PD57006 N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Frequency: 300 - 600 MHz ■ Supply voltage: 26 V ■ Output power: 1 W ■ Operation: class A ■ IMD3 2 tones test : < -40 dBc @ 1 W avg


    Original     		PDF DB-57006-600 PD57006 DB-57006-600 3214W-1-103E B10TJ EXCELDRC35C GRM426C0G102J50 GRM426C0G151J50 GRM426X7R104K50 PD57006 capacitor 150 pf

    SD2942

    Abstract: PD85035s-e sd2931 fm SD57045 PD55015-E PD85035 PD55015 SD56120M PD85035-E SD2933
    Text: Radio frequency technologies for innovative solutions Selection guide March 2008 www.st.com/rf DMOS ISM & FM broadcast applications Part number SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2943 STAC2932B * SD3931-10 SD3932


    Original     		PDF SD2900 SD2902 SD2903 SD2904 SD2918 SD2931-10 SD2932 SD2933 SD2941-10 SD2942 SD2942 PD85035s-e sd2931 fm SD57045 PD55015-E PD85035 PD55015 SD56120M PD85035-E SD2933