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    DB 646 Search Results

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    Integrated Silicon Solution Inc IS61WV6416DBLL-10BLI

    SRAM 1M, 2.5-3.6V, 10ns 64Kx16 Asynch SRAM
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    Mouser Electronics IS61WV6416DBLL-10BLI 480
    • 1 $3.18
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    APEM Inc 5646ADB2VX408

    Toggle Switches Miniature Toggle Switch
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    Mouser Electronics 5646ADB2VX408 125
    • 1 $34.5
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    APEM Inc 5646ADB

    Toggle Switches DPDT 6A 125V 10.5mm On-On
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    Mouser Electronics 5646ADB 1
    • 1 $25.73
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    APEM Inc 5646CDB

    Toggle Switches TOGGLE SWITCH 5000 MINIATURE
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    Mouser Electronics 5646CDB
    • 1 $11.26
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    • 100 $9.48
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    APEM Inc 5646ADB16

    Toggle Switches DPDT 6A 125V 5.5mm On-On
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    Mouser Electronics 5646ADB16
    • 1 $13.62
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    DB 646 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FSRS1960B2

    Abstract: No abstract text available
    Text: US PCS Rx RF Filter 1960 MHz Part number FSRS1960B2 Typical Performance Frequency Response 11 Jul 2001 08:51:11 CH1 CH2 S21 S21 LOG LOG 5 dB/ 1 dB/ REF 0 dB REF 0 dB 5 : -2 . 0662 4 : . 60880 5 PRm Del dB dB 11 Jul 2001 09:12:41 1 960 . 000 000 MHz 60 . 000


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    PDF FSRS1960B2 FSRS1960B2

    FSRS0836H3

    Abstract: No abstract text available
    Text: AMPS/CDMA Tx RF Filter 836.5 MHz Part number FSRS0836H3 Typical Performance Frequency Response 14 Jun 2001 21:32:23 CH1 CH2 S21 S21 LOG LOG 10 dB/ 1 dB/ 5 : -62 . 823 1 : . 16730 REF 0 dB REF 0 dB 1 PRm Del dB dB 967 . 500 -25 . 000 000 000 14 Jun 2001 21:33:58


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    PDF FSRS0836H3 FSRS0836H3

    AD7760

    Abstract: AD7762 AD7763 DB10 24-tap
    Text: 2.5 MSPS, 24-Bit, 100 dB Σ∆ ADC With On-Chip Buffer AD7760 FEATURES 120 dB dynamic range at 78 kHz output data rate 100 dB dynamic range at 2.5 MHz output data rate 112 dB SNR at 78 kHz output data rate 100 dB SNR at 2.5 MHz output data rate 2.5 MHz maximum fully filtered output word rate


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    PDF 24-Bit, AD7760 64-Lead SV-64-4) AD7760BSVZ1 AD7760BSVZ-REEL1 EVAL-AD7760EB AD7760 AD7762 AD7763 DB10 24-tap

    Untitled

    Abstract: No abstract text available
    Text: FEATURES FUNCTIONAL BLOCK DIAGRAM 120 dB dynamic range at 78 kHz output data rate 109 dB dynamic range at 625 kHz output data rate 112 dB SNR at 78 kHz output data rate 106 dB SNR at 625 kHz output data rate 625 kHz maximum fully filtered output word rate


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    PDF AD7762BSVZ AD7762BSVZ-REEL EVAL-AD7762EB 64-Lead SV-64-4 AD7762

    BJT BF 331

    Abstract: mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 24-Hour BJT BF 331 mje 1303 transistor "micro-x" "marking" 102 transistor MJE -1103 NE68019 915 transistor 355 mje 1102 2SC5013 NE68018

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


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    PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    HMMC-5025

    Abstract: No abstract text available
    Text: 2 – 50 GHz Distributed Amplifier Technical Data HMMC-5025 Features • Frequency Range: 2 – 50 GHz • Small Signal Gain: 8.5 dB • P-1dB @ 40 GHz: 12 dBm • Noise Figure: < 6 dB @ 2 – 35 GHz < 10 dB @ 35 – 50 GHz • Return Loss: In/Out: < -10 dB


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    PDF HMMC-5025 HMMC-5025 HP83040

    014e1

    Abstract: transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE680 NE68018
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 014e1 transistor NEC D 882 p 6V mje 1303 transistor BF 414 BJT IC Vce NE AND micro-X 2SC5008 2SC5013 NE68018

    mje 1303

    Abstract: transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 NE68039-T1 NE68039R-T1 mje 1303 transistor NEC D 882 p 6V BJT BF 331 mje 3004 nec d 882 p transistor 2SC5008 68018 transistor KF 507 2SC5013 NE68000

    mje 1303

    Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


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    PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    90PF

    Abstract: 90PF-H8B 25C080 32-PIN AT25256 P89C660
    Text: 90PF Slot Card Dual Channel Programmable Filter/Amplifier Card Introduction Description Each 90PF slot card provides two channels of precision, low noise and distortion -100 dB typical programmable filters with up to 60 dB of pre and 20 dB of post adjustable gain.


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    PDF 11-bit 90PF 90PF-H8B 25C080 32-PIN AT25256 P89C660

    90PF-H8B

    Abstract: 25C080 32-PIN AT25256 P89C660
    Text: 90PF Slot Card Dual Channel Programmable Filter/Amplifier Card Introduction Description Each 90PF slot card provides two channels of precision, low noise and distortion -100 dB typical programmable filters with up to 60 dB of pre and 20 dB of post adjustable gain.


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    PDF 11-bit 90PF-H8B 25C080 32-PIN AT25256 P89C660

    5146C

    Abstract: 5297C
    Text: CRYSTAL FILTERS PTI MODEL FREQ. NUMBER MHz PASSBAND # (dB) (kHz) INS. LOSS (dB) POLES STOPBAND RIPPLE (dB) (dB) (kHz) SPURS (dB) ULT. ATT (dB) S0URCE L0AD Ohms//pF TEMP. RANGE °C PACKAGE Ixwxh (In ch e s) 6485C 1012C 1013C 1646C 7005C 0.455 0.646 1.101


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    PDF 6485C 1012C 1013C 1646C 7005C 5147C 1815C 5146C 5217C 5086C 5297C

    mje 1303

    Abstract: transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 NE68019-T1 15T09 model RB-30 S PT 100
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: It =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE68Q NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B mje 1303 transistor NEC D 882 p 6V sg 3852 OPT500 2sc5008 15T09 model RB-30 S PT 100

    702 TRANSISTOR sot-23

    Abstract: mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fr = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 NE68800 NE68018-T1 NE68019-T1 NE68030-T1 NE68033-T1B 702 TRANSISTOR sot-23 mje 1303 common emitter bjt transistor kf 508 IC CD 3207 BJT BF 331

    844 314

    Abstract: D 467 C
    Text: W hot HEWLETT* 1 "KM PACKARD 2 -5 0 GHz Distributed Amplifier Technical Data HMMC-5025 Features Frequency Range: 2 - -50 GHz Small Signal Gain: 8.5 dB P-idB 40 GHz: 12 dBm Noise Figure: < 6 dB @ 2 - 35 GHz < 10 dB @ 35 - 50 GHz • Return Loss: Iii/Out: < -10 dB


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    PDF HMMC-5025 HP83040 844 314 D 467 C

    transistor c 2499

    Abstract: No abstract text available
    Text: m AT-41435 Up to 6 GHz Low Noise Silicon Bipolar Transistor H EW LETT PACKARD Features • • • • 35 micro-X Package Low Noise Figure: 1.7 dB typical at 2.0 GHz 3.0 dB typical at 4.0 GHz High Associated Gain: 14.0 dB typical at 2.0 GHz 10.0 dB typical at 4.0 GHz


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    PDF AT-41435 transistor c 2499

    NE67383

    Abstract: No abstract text available
    Text: NEC LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY FEATURES VERY HIGH m a x : 100 GHz LOW NOISE FIGURE 0.4 dB at 4 GHz 0.8 dB at 8 GHz 1.4 dB at 12 GHz 1.9 dB at 18 GHz


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    PDF NE67300 NE67383 NE67383 NE673

    ha 1452 Amplifiers

    Abstract: 702 sot 23 100Z3
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 OT-23) ha 1452 Amplifiers 702 sot 23 100Z3

    NE67383

    Abstract: No abstract text available
    Text: LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY NE67300 NE67383 NE67383 N O IS E F IG U R E A N D A S S O C IA T E D G A IN vs. FR E Q U E N C Y FEATURES VERY HIGH fMAX: 100 GHz LOW NOISE FIGURE 0.4 0.8 1.4 1.9 3.3 dB dB dB dB dB at at at at at


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    PDF NE67300 NE67383 NE67383 NE673 NE67300) channe49 lS21l IS12I

    HANDSET MOTOROLA CT2

    Abstract: SPEECH DIALER SD 2000 CORDED MOTOROLA CT2 USER GUIDE MC1496 mc34216 user manual SPEECH DIALER fm 2000 MC34118P MC336 transceiver fsk baud carrier uhf mbps SPEECH DIALER SD 2000 Manual
    Text: RF Communications Table 1. RF Front End ICs Low Noise Amplifier Mixer Device Gain dB Noise Figure (dB) IIP3 (dBm) P1dB (dBm) MC13141 17 1.8 -5 MC13142 17 1.8 -5 Gain (dB) Noise Figure (dB) IIP3 (dBm) P1dB (dBm) -1 5 7 16 - 3 to +15 -1 0 -1 5 ±3 12 - 3 to +21


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    PDF MC13141 D1/751, D/751 FTB/976 D/751 MC13142 MC13143 HANDSET MOTOROLA CT2 SPEECH DIALER SD 2000 CORDED MOTOROLA CT2 USER GUIDE MC1496 mc34216 user manual SPEECH DIALER fm 2000 MC34118P MC336 transceiver fsk baud carrier uhf mbps SPEECH DIALER SD 2000 Manual

    MC1349P

    Abstract: MC1352P MC1355P mc1349 MC1330P MC1355 mc1352 mc1310p TBA120C TBA120
    Text: Comsumer devices TELEV ISIO N CIR CU ITS SOUND S Typ e Function Features Case M C1351P Sound IF , Lim iter, Detector, A u dio Preamp. 80/LZV, 3 dB Lim itin g. 3,5 Vrm s O utput. 65 dB gain. 646 14 pin plastic D I L TBA120C Sound IF , Lim iter, Detector 30jUV, 3 dB Lim itin g at 5,5 M H z, 1 Vrm s


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    PDF MC1351P TBA120C TBA120D 80/JV, 30jUV, TBA120. MC1330P MC1349P MC1352P MC1355P mc1349 MC1355 mc1352 mc1310p TBA120

    HA 12058

    Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


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    PDF NE680 HA 12058 TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor