STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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FMM5701LG
Abstract: 26GHz LNA nf 931 24ghz FMM5701X mmic n1 diode Free 18-24GHz 584 amplifer 584 MMIC microwave databook
Text: FMM5701LG LNA MMIC FEATURES • Low Noise Figure: NF=1.7dB MAX. @ f=20GHz NF=2.0dB (MAX.) @ f=24GHz • High Associated Gain: Gas=14dB (MIN.) @ f=20GHz Gas=12dB (MIN.) @ f=24GHz • Wide Frequency Band: 18-24GHz • LG package for SMT Applications DESCRIPTION
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FMM5701LG
20GHz
24GHz
18-24GHz
FMM5701LG
18-24GHz
26GHz LNA
nf 931
24ghz
FMM5701X
mmic n1
diode Free 18-24GHz
584 amplifer
584 MMIC
microwave databook
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QFN24
Abstract: WCDMA* antenna WCDMA1700 NJG1658K34
Text: NJG1658K34 DP7T ANTENNA SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1658K34 is a GaAs DP7T antenna switch IC designed for WCDMA/GSM multimode handsets. This switch can be operated by six bits control signal from 1.3V of logic high voltage. This switch features low insertion loss and low distortion. Also, the ESD
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NJG1658K34
NJG1658K34
QFN24-34
WCDMA800
WCDMA1700/1500
WCDMA2000
GSM850/900
GSM1800/1900
QFN24
WCDMA* antenna
WCDMA1700
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GSM1800
Abstract: NJG1656LK4 SP9T grx2 GSM1900 GSM900
Text: NJG1656LK4 SP9T ANTENNA SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1656LK4 is a GaAs SP9T antenna switch IC for GSM/TD-SCDMA multi-band handsets. The IC contains a MMIC switch die with on-chip logic circuits and a LTCC substrate with built-in three-LPFs on GSM/TD-SCDMA transmit
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NJG1656LK4
NJG1656LK4
GSM1800
SP9T
grx2
GSM1900
GSM900
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NJG1519KC1
Abstract: No abstract text available
Text: NJG1519KC1 03/07/2000 Ver 1 TENTATIVE SP4T SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1519KC1 is a GaAs high power SP4T switch MMIC for antenna switch of dual mode cellular phone application such as GSM/DCS1800. This switch is designed for an antenna switch between
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NJG1519KC1
NJG1519KC1
GSM/DCS1800.
FLP10
34dBm
32dBm
35dBm
FLP10-C
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Untitled
Abstract: No abstract text available
Text: NJG1535HD3 TENTATIVE June.20,2002 Ver.4 Under Development SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1535HD3 is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features high power, low loss, high isolation and the low switch current.
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NJG1535HD3
NJG1535HD3
USB10-D3
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dqpsk
Abstract: EMP14 NJG1304E NJU7001 NJU7660
Text: NJG1304E MEDIUM POWER AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1304E is a GaAs MMIC designed mainly for driver amplifier of PHS base station in Japan. This is a variable gain type with 20dB dynamic range. It features very low distortion and Pacp is less than –70dBc.
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NJG1304E
NJG1304E
70dBc.
17dBm
180mA
17dBm
130mg
dqpsk
EMP14
NJU7001
NJU7660
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NJG1535HD3
Abstract: No abstract text available
Text: NJG1535HD3 TENTATIVE August.26,2002 Ver.7 SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1535HD3 is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features high power, low loss, high isolation and the low switch current.
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NJG1535HD3
NJG1535HD3
USB10-D3
36dBmlium-Arsenide
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L1149
Abstract: FFP16 FFP16-C1 NJG1708PC1
Text: NJG1708PC1 Ver 0.3 11/02’99 TENTATIVE 800MHz BAND DOWNCONVERTER GaAs MMIC nGENERAL DESCRIPTION NJG1708PC1 is a downconverter GaAs MMIC including a 2xLNA, local amplifier and MIXER, designed NJG1708PC1 exhibits mainly for 800MHz band cellular phone. The Ultra Small & Thin FFP16-C1 package is applied.
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NJG1708PC1
800MHz
NJG1708PC1
FFP16-C1
820MHz,
-50dBm,
690MHz,
L1149
FFP16
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NJG1105F
Abstract: 2140MHz
Text: NJG1105F Ver 1 12/25’99 TENTATIVE 1.9/2.1GHz LOW NOISE AMPLIFIER GaAs MMIC nGENERAL DESCRIPTION NJG1105F is a Low Noise Amplifier GaAs MMIC designed for 1.9/2.1GHz digital cellular phone handsets such as PCS and WCDMA. This amplifier provides low noise figure, high gain
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NJG1105F
NJG1105F
18aAs)
2140MHz
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VSP8 Package
Abstract: NJG1506R
Text: NJG1506R SPDT SWITCH GaAs MMIC •GENERAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of cellular phone. NJG1506R is operated in the wide frequency range from
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NJG1506R
NJG1506R
50MHz
28dBm
19dBm
10dBm
VSP8 Package
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C5-10PF
Abstract: spdt gaas 1ghz NJG1509F RF TRANSISTOR 2GHZ
Text: NJG1509F SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1509F is a SPDT switch GaAs MMIC which features low loss, high isolation and low operating voltage, and ideally suitable for the T/R switch of digital wireless phone handsets. This switch is operated in the wide frequency range from
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NJG1509F
NJG1509F
50MHz
22dBm.
27dBm
22dBm
C5-10PF
spdt gaas 1ghz
RF TRANSISTOR 2GHZ
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TRANSISTOR 726
Abstract: VSP8 Package NJG1507R
Text: NJG1507R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1507R is a GaAs SPDT switch IC which exhibits low loss and high isolation, and ideally suitable for T/R switch of the digital wireless phone. This switch is operated in the wide frequency range from 50MHz to 3.0GHz at low operating voltage from +2.5V with
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NJG1507R
NJG1507R
50MHz
22dBm
27dBm
TRANSISTOR 726
VSP8 Package
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GRM36
Abstract: NJG1543HB3 MURATA GRM36
Text: NJG1543HB3 TENTATIVE Feb.28,2002 Ver.1 Under Development SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION The NJG1543HB3 is a GaAs SPDT switch MMIC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of
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NJG1543HB3
NJG1543HB3
100MHz
22dBm
GRM36
MURATA GRM36
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C5-10PF
Abstract: spdt gaas 1ghz NJG1506R
Text: NJG1506R SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1506R is a GaAs SPDT switch IC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of cellular phone. NJG1506R is operated in the wide frequency range from
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NJG1506R
NJG1506R
50MHz
28dBm
19dBm
10dBm
C5-10PF
spdt gaas 1ghz
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10GHz 5pin package
Abstract: C5-10PF NJG1508F
Text: NJG1508F SPDT SWITCH GaAs MMIC nGENERAL DESCRIPTION NJG1508F is a GaAs SPDT switch MMIC which features low loss, high isolation and low control current, and ideally suitable the cellular phone handsets which needs to switch during two frequency bands. NJG1508F is operated in the wide frequency range from
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NJG1508F
NJG1508F
50MHz
19dBm
10dBm
10GHz 5pin package
C5-10PF
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NJG1535HC3
Abstract: USB10-C3
Text: NJG1535HC3 TENTATIVE Feb.28,2002 Ver.3 Under Development SPDT SWITCH GaAs MMIC n GENERAL DESCRIPTION NJG1535HC3 is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch is high power, low loss, high isolation and the low switch current.
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NJG1535HC3
NJG1535HC3
USB10-C3
36dBm
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Untitled
Abstract: No abstract text available
Text: NJG1600KB2 TENTATIVE Mar.8,2002 Ver.1 Under Development SPDT SWITCH GaAs MMIC n GENERAL DESCRIPTION NJG1542HB3 is a GaAs SPDT switch IC that features low loss and high isolation, and ideally suited for T/R switch of digital cordless telephone or other digital wireless system.
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NJG1542HB3
100MHz
NJG1600KB2
22dBm
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Untitled
Abstract: No abstract text available
Text: NJG1107HB6 LOW NOISE AMPLIFIER GaAs MMIC •GENERAL DESCRIPTION NJG1107HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input
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NJG1107HB6
NJG1107HB6
575GHz
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MURATA GRM36
Abstract: NJG1606HB6 GRM36 grm36 murata
Text: NJG1606HB6 SPDT SWITCH GaAs MMIC QGENERAL DESCRIPTION The NJG1606HB6 is a GaAs SPDT switch MMIC which features low loss, high isolation and low control current and ideally suitable for switching the RF receiving circuit of cellular phone. This switch is operated in the wide frequency range from
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NJG1606HB6
NJG1606HB6
100MHz
10dBm
MURATA GRM36
GRM36
grm36 murata
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MLK1005
Abstract: MLG1005
Text: NJG1107HB6 LOW NOISE AMPLIFIER GaAs MMIC QGENERAL DESCRIPTION NJG1107HB6 is a Low Noise Amplifier GaAs MMIC designed for GPS This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input
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NJG1107HB6
NJG1107HB6
575GHz
5751GHinto
MLK1005
MLG1005
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GRM36
Abstract: NJG1600KB2
Text: TENTATIVE NJG1600KB2 Mar.22,2002 Ver.2 Under Development SPDT SWITCH GaAs MMIC Q GENERAL DESCRIPTION NJG1600KB2 is a GaAs SPDT switch IC that features small-sized package and low insertion loss , and ideally suited for T/R switch of digital cordless telephone or other
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NJG1600KB2
NJG1600KB2
100MHz
GRM36
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MSM7731-02
Abstract: P-BGA313-3535-1 TBA 931 MsM82C59 MSM66 arm processor msm5299 SSOP20-P-250-0 QFJ28-P-S450-1 MSM65524A
Text: Datasheet CD-ROM Ver 1.23, July 1999 Bay of Islands, New Zealand Attention Please! People to People Technology 1. Regarding Operation • This is NOT a music CD. Please do not play it on an ordinary music CD player. It may cause damage to your ears and loudspeakers.
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270MB
ML670100
D-41460
MSM7731-02
P-BGA313-3535-1
TBA 931
MsM82C59
MSM66
arm processor
msm5299
SSOP20-P-250-0
QFJ28-P-S450-1
MSM65524A
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Untitled
Abstract: No abstract text available
Text: FMM5017VF FUJITSU MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50Q Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications
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FMM5017VF
29dBm
FMM5017VF
11V11
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