uln2003r
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD ULN2003R Preliminary LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The UTC ULN2003R is high-voltage, high-current darlington transistor arrays. Each consists of seven NPN darlington pairs
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ULN2003R
ULN2003R
500mA.
OP-16
QW-R113-013
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ULN2003 RELAY DRIVER
Abstract: No abstract text available
Text: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode
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ULN2003
ULN2003
500mA.
DIP-16
ULN2003 RELAY DRIVER
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IC-3479
Abstract: IC-8359 pa1428a uPA1428 transistor array high speed uPA1428AH IEI-1213 PA1428 MF-1134 PA1428AH
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1428A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1428A is NPN silicon epitaxial Darlington Power (in millimeters) Transistor Array that built in Surge Absorber 4 circuits
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PA1428A
PA1428A
PA1428AH
IC-3479
IC-8359
uPA1428
transistor array high speed
uPA1428AH
IEI-1213
PA1428
MF-1134
PA1428AH
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PA1476
Abstract: transistor b 1202 uPA1476 uPA1476H nec UPA1476H NEC SIP pa*476 IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1476 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1476 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1476
PA1476
PA1476H
transistor b 1202
uPA1476
uPA1476H nec
UPA1476H
NEC SIP
pa*476
IEI-1213
MEI-1202
MF-1134
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ic 8705
Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1436A
PA1436A
PA1436AH
ic 8705
IC-8705
nec 8705
IC-3482
PA1436AH
IEI-1209
UPA1436AH
pa1436
transistor array high speed
IEI-1213
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DARLINGTON MANUAL
Abstract: pa1436ah uPA1436H pa1436 iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1436
PA1436
PA1436H
DARLINGTON MANUAL
pa1436ah
uPA1436H
iei-1209
DARLINGTON TRANSISTOR ARRAY
MF-1134
npn darlington array
IEI-1213
MEI-1202
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IC-3523
Abstract: IC-6342 MEI-1202 MF-1134 IEI-1213 power transistor array
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1458 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1458 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1458
PA1458
PA1458H
IC-3523
IC-6342
MEI-1202
MF-1134
IEI-1213
power transistor array
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uPA1456H
Abstract: IC-3521 PA1456 IC-6340 IEI-1213 MEI-1202 MF-1134 DARLINGTON TRANSISTOR ARRAY
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1456 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1456 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1456
PA1456
PA1456H
uPA1456H
IC-3521
IC-6340
IEI-1213
MEI-1202
MF-1134
DARLINGTON TRANSISTOR ARRAY
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M63828DP
Abstract: 16PIN M63828WP 16P4X-A IL500
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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M63828WP/DP
500mA
M63828WP
M63828DP
500mA)
16P2X-B
16P2X-B
16PIN
16P4X-A
IL500
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M54523
Abstract: pnp 8 transistor array 18P4G 20P2N-A M54583 M54583FP M54583P 8 pin 4v power supply ic
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
M54523
pnp 8 transistor array
18P4G
20P2N-A
M54583
8 pin 4v power supply ic
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M54583FP
Abstract: pnp darlington array M54523 PNP DARLINGTON ARRAYS 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
pnp darlington array
M54523
PNP DARLINGTON ARRAYS
18P4G
20P2N-A
M54583
pnp 8 transistor array
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IL500
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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M63827WP/DP
500mA
M63827WP
M63827DP
500mA)
16P2X-B
16P2X-B
16PIN
IL500
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M54522
Abstract: m54566 M54566WP
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566WP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION M54566WP are seven-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54566WP
400mA
M54566WP
400mA)
M54522
m54566
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IC-6634
Abstract: PA1478 MEI-1202 MF-1134 IEI-1213 2di50 DARLINGTON TRANSISTOR ARRAY
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1478 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in Surge Absorber and
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PA1478
PA1478
PA1478H
IC-6634
MEI-1202
MF-1134
IEI-1213
2di50
DARLINGTON TRANSISTOR ARRAY
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18P4G
Abstract: 20P2N-A M54562FP M54562P pnp darlington array pnp 8 transistor array npn 8 transistor array 24 "transistor array"
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54562P/FP 8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M54562P and M54562FP are eight-circuit output-sourcing Darlington transistor arrays. The circuits are made of PNP
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M54562P/FP
500mA
M54562P
M54562FP
500mA)
18P4G
20P2N-A
pnp darlington array
pnp 8 transistor array
npn 8 transistor array
24 "transistor array"
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pa1437
Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array
Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed
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PA1437
PA1437
PA1437H
IC-3516
pnp DARLINGTON TRANSISTOR ARRAY
IEI-1209
pnp darlington array
IEI-1213
MEI-1202
MF-1134
PA1437H
power transistor array
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M54522
Abstract: M54566DP Seven Transistor Array PNP m54566
Text: MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54566DP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566DP is seven-circuit collector current sink type darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated
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M54566DP
400mA
M54566DP
400mA)
Jul-2011
M54522
Seven Transistor Array PNP
m54566
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M54523
Abstract: M54583FP 18P4G 20P2N-A M54583 M54583P pnp 8 transistor array 8-channel PNP darlington array
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54583P/FP 8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54583P and M54583FP are eight-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54583P/FP
400mA
M54583P
M54583FP
M54583P
400mA)
M54523
18P4G
20P2N-A
M54583
pnp 8 transistor array
8-channel PNP darlington array
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M63827DP
Abstract: M63827WP 16PIN 16P4X-A IL500
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63827WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63827WP and M63827DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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M63827WP/DP
500mA
M63827WP
M63827DP
500mA)
16P2X-B
16P2X-B
16PIN
16P4X-A
IL500
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63828WP/DP Taiwan A’ssy product 7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63828WP and M63828DP are seven-circuit Darlington transistor arrays with clamping diodes. The circuits are made
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M63828WP/DP
500mA
M63828WP
M63828DP
500mA)
16P2X-B
16P2X-B
16PIN
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8 pin 4v power supply ic
Abstract: M54222 Seven Transistor Array PNP M54566FP pnp 8 transistor array M54566P transistor arrays 5v m54566 M5422 pnp darlington array
Text: POWEREX MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor
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M54566P/FP
400mA
M54566P
M54566FP
400mA)
8 pin 4v power supply ic
M54222
Seven Transistor Array PNP
pnp 8 transistor array
transistor arrays 5v
m54566
M5422
pnp darlington array
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darlington pair transistor
Abstract: J 620 610 transistor DARLINGTON ARRAYS darlington pair power transistor darlington pair transistor table ILN2003 darlington power transistor Monolithic Transistor Pair ILN2003A KK2003A
Text: TECHNICAL DATA HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS The KK2003A are monolithic high-voltage, high-current Darlington transistor arrays. Each consists of seven n-p-n Darlington pairs that feature high-voltage outputs with commoncathode clamp diodes for switching inductive loads. The collectorcurrent rating of a single Darlington pair is 500 mA. The
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KK2003A
500-mA
012AC)
darlington pair transistor
J 620 610 transistor
DARLINGTON ARRAYS
darlington pair power transistor
darlington pair transistor table
ILN2003
darlington power transistor
Monolithic Transistor Pair
ILN2003A
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M54519P
Abstract: M54519FP IC M54519P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54519P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54519P and M54519FP are seven-circuit Darlington transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current
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M54519P/FP
400mA
M54519P
M54519FP
400mA)
IC M54519P
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XR-2011
Abstract: XR2011 XR2013CN XR2013 XR-2012
Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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OCR Scan
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XR-2011/12/13/14
XR-2011/2012/2013/2014
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2011
XR2011
XR2013CN
XR2013
XR-2012
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