d1409a
Abstract: D1409 2SD1409A 2SD1409A equivalent
Text: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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2SD1409A
d1409a
D1409
2SD1409A
2SD1409A equivalent
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d1409a
Abstract: 2SD1409A
Text: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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PDF
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2SD1409A
d1409a
2SD1409A
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D1409A
Abstract: d1409 2SD1409A
Text: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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Original
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PDF
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2SD1409A
D1409A
d1409
2SD1409A
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d1409a
Abstract: No abstract text available
Text: D1409A TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington D1409A Industrial Applications High Voltage Switching Applications Unit: mm • High DC current gain: hFE = 600 (min.) (VCE = 2 V, IC = 2 A) • Monolithic construction with built-in base-emitter shunt resistor
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Original
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PDF
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2SD1409A
SC-67
d1409a
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d1409a
Abstract: 2SD1409A
Text: D1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ D1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。
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2SD1409A
SC-67
2-10R1A
20070701-JA
d1409a
2SD1409A
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d1409a
Abstract: 2SD1409A 100-C3000
Text: D1409A シリコンNPN三重拡散形 ダーリントン接続 東芝トランジスタ D1409A 通 信 工 業 用 ○ 高電圧スイッチング用 単位: mm • 直流電流増幅率が高い。: hFE = 600 (最小) (VCE = 2 V, IC = 2 A) • ベース･エミッタ間に抵抗が内臓されております。
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Original
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PDF
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2SD1409A
SC-67
2-10R1A
d1409a
2SD1409A
100-C3000
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