Untitled
Abstract: No abstract text available
Text: Power LED I TECHNICAL DATA W11191, W11192 N11191, N11192 D11191, D11192 B11191, B11192 G11191, G11192 R11191, R11192 C11191, C11192 A11191, A11192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430
|
Original
|
PDF
|
W11191,
W11192
N11191,
N11192
D11191,
D11192
B11191,
B11192
G11191,
G11192
|
Untitled
Abstract: No abstract text available
Text: Power LED I TECHNICAL DATA W11191, W11192 N11191, N11192 D11191, D11192 B11191, B11192 G11191, G11192 R11191, R11192 C11191, C11192 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev05 – 2005/09
|
Original
|
PDF
|
W11191,
W11192
N11191,
N11192
D11191,
D11192
B11191,
B11192
G11191,
G11192
|
Untitled
Abstract: No abstract text available
Text: Power LED I TECHNICAL DATA W11190 N11190 D11190 B11190 G11190 R11190 C11190 A11190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev09 – 2006/05 1 SPECIFICATIONS - Features • Super high flux output and high luminance
|
Original
|
PDF
|
W11190
N11190
D11190
B11190
G11190
R11190
C11190
A11190
Rev09
|
Untitled
Abstract: No abstract text available
Text: Power LED I TECHNICAL DATA W11190 N11190 D11190 B11190 G11190 R11190 C11190 A11190 SEOUL SEMICONDUCTOR CO., LTD. 148-29, Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL : 82-2-3281-6269 FAX : 82-2-857-5430 Rev08 – 2005/09 1 SPECIFICATIONS - Features • Super high flux output and high luminance
|
Original
|
PDF
|
W11190
N11190
D11190
B11190
G11190
R11190
C11190
A11190
Rev08
|
C10535E
Abstract: C11531E MEI-1202 PA610TA
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA0018D10000000 Version
|
Original
|
PDF
|
MA0018D10000000
D020210
O-252
O-252
3000pcs
6000pcs
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
d998 transistor
Abstract: transistor D998 d998 STR G 6352 str 6352 transistor p733 D1090 D1092 D1116 p733
Text: Catalogue back pages 2010-2:Layout 1 2/7/10 09:08 Page 197 APPROVALS INTERNATIONAL APPROVAL BODIES Denmark United Kingdom South Africa D.E.M.K.O B.S.I. Kitemark S.A. Bureau of Standards BS EN ISO 9001:2000 B.S.I. British Electro-Technical Approvals Board Sweden
|
Original
|
PDF
|
EC1907/2006,
d998 transistor
transistor D998
d998
STR G 6352
str 6352
transistor p733
D1090
D1092
D1116
p733
|
751768
Abstract: str f 6454 str 6454 d998 transistor d998 transistor D998 D1090 p733 E9702 D1116
Text: APPROVALS INTERNATIONAL APPROVAL BODIES Denmark United Kingdom Norway D.E.M.K.O B.S.I. Kitemark N.E.M.K.O. BS EN ISO 9001:2000 B.S.I. British Electro-Technical Approvals Board Europe South Africa E.N.E.C. S.A. Bureau of Standards Austria O.V.E Sweden Finland
|
Original
|
PDF
|
|
IP 8082 BL
Abstract: 30A fuse ENEC Baseefa09ATEX0232X A/ATEX
Text: Product Catalogue Issue No 83 Europe Elektron Technology Melville Court, Spilsby Road, Romford, Essex, England RM3 8SB Tel: Fax +44 0 1708 343800 +44 (0)1708 376544 Email: Web: [email protected] www.elektron-bulgin.com The Americas Elektron Technology
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: VSC6134 Datasheet Features ● ● ● ● ● ● ● ● ● ● Two ITU-T G.709-compliant processors GR253-compliant STS192 section and line processor OTU synchronous and asynchronous mapping 10 GbE transport with RMON MIB per IEEE 802.3 ITU-T G.975 Reed Solomon encoder and decoder
|
Original
|
PDF
|
VSC6134
709-compliant
GR253-compliant
STS192
16-bit
STS192/10
97-free
897-pin
VMDS-10185
VSC6134
|
2SJ463A
Abstract: C10535J 2SJ463A2
Text: データ・シート MOS形電解効果トランジスタ MOS Field Effect Transistor 2SJ463A PチャネルMOS FET スイッチング用 外形図（単位：mm） ○ゲートを2.5 Vで駆動できる。 2 3 1 ○ゲートカットオフ電圧が低い。
|
Original
|
PDF
|
2SJ463A
2SJ463A2
PW10s,
D11198JJ1V0DS00
108-0171NEC
46017NEC
54024NEC
2SJ463A
C10535J
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
C10535E
Abstract: C11531E MEI-1202 PA610TA uPA610TA MARKING JB
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm DESCRIPTION 0.65 +0.1 –0.15 The µPA610TA is a switching device which can be driven suitable for use as a high-speed switching device in digital circuits.
|
Original
|
PDF
|
PA610TA
PA610TA
C10535E
C11531E
MEI-1202
uPA610TA
MARKING JB
|
|
|
2SJ463A
Abstract: C10535J 2SJ463A2
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PDF
|
2SJ463A
2SJ463A2
108-0171NEC
46017NEC
54024NEC
2SJ463A
C10535J
|
2SJ463A
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
|
d998
Abstract: k d998 NL-2627 D1092 PC 8591 SP730 D1133 D1090 apm 4546 ST 8550
Text: 29-52 Steckverbinder und Verteilereinheiten EN60 320 Polysnap -Steckverbinder (Stromeingangsmodule) Batteriehalter 87-108 Netzfilter 109-140 Sicherungshalter (einschließlich Sicherungen) 141-158 Anzeigen (einschließlich zerstörungssicher) 159-164 Anzeigen
|
Original
|
PDF
|
|
IN128
Abstract: block diagram of ct scanner ADAS1256 Wire diagram of ct scanner sensor x-ray IN255 photodiode CDS 256-CHANNEL
Text: Data Sheet 256-Channel, 16-Bit, Charge-to-Digital AFE on Flex ADAS1256 FEATURES GENERAL DESCRIPTION 256-channel, charge-to-digital conversion on a single chip 16-bit resolution with no missing codes Simultaneous sampling User adjustable full-scale range up to 32 pC
|
Original
|
PDF
|
256-channel,
16-bit
16-Bit,
ADAS1256
ADAS1256
D11198F-0-11/12
IN128
block diagram of ct scanner
Wire diagram of ct scanner
sensor x-ray
IN255
photodiode CDS
256-CHANNEL
|
nokia 1200 circuit diagram
Abstract: d1276 d1275 D1878 equivalent nokia 1280 d1265 d1878 transistor d1276 TRANSISTOR D1879 D1278
Text: MXED301 128 Column by 80 Row OLED Advance Information Driver with Controller Subject To Change Without Notice FEATURES Standard Control and Data Interfaces • Parallel: 8-Bit Motorola 68xx or Intel 80xx • Serial: I2C, 3-Line, 3-Line and 4-Line SPI • 6.5MHz maximum data rate
|
Original
|
PDF
|
MXED301
64-row
16-row
S-16329
N1016,
nokia 1200 circuit diagram
d1276
d1275
D1878 equivalent
nokia 1280
d1265
d1878
transistor d1276
TRANSISTOR D1879
D1278
|
C10535J
Abstract: PA610TA TEB-528 PA610TA2
Text: データ・シート MOS形電解効果トランジスタ MOS Field Effect Transistor µPA610TA PチャネルMOS FET スイッチング用 PA610TAは2.5 V駆動タイプのPチャネル縦型MOS FETで， 外形図（単位：mm） 0.65＋0.1 −0.15 3 V電源系ICの出力による直接駆動が可能なスイッチング素子で
|
Original
|
PDF
|
PA610TA
PA610TA2
300TOTAL
PW10s,
D11199JJ1V0DS00
108-0171NEC
46017NEC
54024NEC
C10535J
PA610TA
TEB-528
|
X11190
Abstract: No abstract text available
Text: SEOUL SEMICONDUCTOR Z-POWER LED Series Technical Datasheet for X11190 Z-Power series is designed for high current operation and high flux output applications. Features • Super high Flux output and high Luminance Z-Power LED's thermal management perform exceeds
|
Original
|
PDF
|
X11190
X11190
|
C10535J
Abstract: PA610TA
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PDF
|
PA610TA
PA610TA2
TA-3200
108-0171NEC
46017NEC
54024NEC
C10535J
PA610TA
|
FAH diode
Abstract: diode marking FAH transistor marking 15c
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR / _2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm DESCRIPTION The 2SJ463A is a switching device which can be driven directly by a 2.5 V power source.
|
OCR Scan
|
PDF
|
2SJ463A
2SJ463A
FAH diode
diode marking FAH
transistor marking 15c
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ463A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Package Drawings unit: mm D E S C R IP T IO N The 2SJ463A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ463A has excellent switching characteristics, and is
|
OCR Scan
|
PDF
|
2SJ463A
2SJ463A
|
