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D10G60C Abstract: IDH10SG60C D10G60 JESD22 Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDH10SG60C 20mA2) D10G60C IDH10SG60C D10G60 JESD22
D10G60C Abstract: No abstract text available Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDD10SG60C 20mA2) PG-TO252-3 D10G60C D10G60C
D10G60C Abstract: D10G60 Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH10SG60C 20mA2) PG-TO220-2 D10G60C D10G60C D10G60
Untitled Abstract: No abstract text available Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDH10SG60C 20mA2)
Untitled Abstract: No abstract text available Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDD10SG60C 20mA2)
D10G60 Abstract: No abstract text available Text: IDH10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 16 nC • Temperature independent switching behavior IF; TC< 130 °C	Original	PDF	IDH10SG60C 20mA2) D10G60
D10G60C Abstract: IDD10SG60C JESD22 Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDD10SG60C 20mA2) D10G60C IDD10SG60C JESD22
D10G60C Abstract: D10G60 IDD10SG60C JESD22 Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior	Original	PDF	IDD10SG60C 20mA2) D10G60C D10G60 IDD10SG60C JESD22
D10G60 Abstract: No abstract text available Text: IDD10SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior	Original	PDF	IDD10SG60C 20mA2) D10G60