VRBG5314S
Abstract: VRPY5314S wd1020
Text: A C INTERFACE INC IDE D | D0S33Ô3 D0D02Û7 2 STANLEY SUPER BRIGHT LED LAMP I BI COLOR TYPE 05 T-1 3/4 TYPE SERIES ISELECTION GUIDE COLOR "v: MATERIAL . J PART NUMBER Red Green GaAsP/Gap GaP V R B G 5314S Red Yellow GaAsP/GaP GaP V R P Y 5 31 4S • FEATURES
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D0S33Ã
VRBG5314S
VRPY5314S
VRBG5314S
VRPY5314S
R314S
wd1020
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970HD
Abstract: No abstract text available
Text: 47E T> MONITOR PRODUCTS CO INC bE'ì'iOTb D0D02bS 1 • H P C O ^ j -¿,-4¿j MONITOR PRODUCTS M O N I T O R 970HD HIGH SPEED CMOS INDEPENDENT DUAL FREQUENCY OSCILLATOR PACKAGE DIMENSIONS FEATURES 970HD .815" M ax._ 2 0 .8 n .175" Min. (4.5) .200" Max.
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D0D02bS
970HD
970HD
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dl604
Abstract: No abstract text available
Text: DATATRONICS EbE D • Efci514flE D0D0270 T -q .q -1 3 3 S E R IE S 604 5-TAPS 16 PIN FAST LOGIC D ELA Y MODULES 1 • 16 Pin D IL Package >TTL and D T L Compatible • 5 Equally Spaced Taps Specifications: • Supply Voltage • Logic 1 Input Current • Logic 0 Input Current
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StS14Ã
Q000270
25VDC
DL604-4A
DL604-4B)
92352TEL
dl604
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45016m
Abstract: J12-18C-R250U J12D-M204-R01M J12-18C-R01M J12D-M204-R02M metal detectors circuit HgCdTe PbSe Judson judson PA-100 J12-18C
Text: E G S G JUI1S0N 31E D m 3030b05 D0D0225 □ • JlID T -V /-V / Indium Arsenide Detector Operating Notes General Responsivity Temperature Effects J12 Series detectors are high-quality Indium Arsenide photodiodes for use in the 1 to 3.6 urn wavelength range.
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303Db0S
J12TE2-8B6-R01M
J12TE2-8B6-R02M
J12TE3
J12TE3-66S
J12D-M204-R01M
J12D-M204-R02M
45016m
J12-18C-R250U
J12-18C-R01M
metal detectors circuit
HgCdTe
PbSe Judson
judson PA-100
J12-18C
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Untitled
Abstract: No abstract text available
Text: Rectangular LED Array G30B and G32XB Series ¡/idea The G30B is made up of a 10 LED lamps. The design of the G30B precludes cutting of the holder to make different length units. The G32XB is made up of a maximum of 10 lamps per array. The G30B array has a shoulder top and bottom. The leads can be
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G32XB
G32XB
D0D02E1
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c SMV3022 SERIES SUPER HYPERABRUPT TUNING DIODES FORVCXO ’S • • • • • • • Extremely High Capacitance Swing Linear Characteristics Uniform Capacitance / Temperature Coefficient Highly Reproducible Ion Implanted Structure
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SMV3022
OT-23
OD-323
SMV30222*
SMV30223Â
OT-23
D0D0210
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Untitled
Abstract: No abstract text available
Text: T- :- 34E D MACRONIX INC SbfifififiE □OQDl'ifi B • T'75-O?-iS MXBQ14 Preliminary_¡ V B A CORDLBRSS PHONE 1C HANDSET UNIT FEATURES: • • • • Reduce total component counts. Easy production and enhance productivity.
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MXBQ14
000sq.
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Untitled
Abstract: No abstract text available
Text: :a l i l o n d l l Itr U « G T -4 8 0 0 1 A Switched Ethernet Controller forlOBaseX Preliminary Rev. Revision 1.4 7/17/97 Please contact Galileo Technology for possible updates before finalizing a design. FEATURES Single-chip, low cost, Switched Ethernet Controller
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GT-48002A
100BaseX
GT-48003
100VGAnyLAN
10Mbps
20Mbps
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AKD12000
Abstract: Anadigics MMIC Downconverter lnb ku-band SI MMIC DOWNCONVERTER
Text: Data Sheet AKD12000 Ku-Band DBS MMIC Downconverter L^kM kDIGIG Your GaAs IC Source •{.- • .i.-.:■ #VvV •: i .i ’- . ’ a.,«*'4-; ■ Integrated Monolithic Downconverter V y« ■ 6 dB Noise Figure T ■ 35 dB Conversion Gain ■ Small Size
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AKD12000
28-28JÃ
Anadigics MMIC Downconverter
lnb ku-band
SI MMIC DOWNCONVERTER
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VERPACKUNGSVORSCHRIFT
Abstract: No abstract text available
Text: RA 2505.RA 2510 Si-Gleichrichterzellen in Button-Bauform Silicon Rectifier Button-Cell m 25 A Nominal current Nennstrom =a 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung tr Plastic case, coloured metal ring indicates cathode
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UL94V-0
0D1RS14
DGG174
000017S
VERPACKUNGSVORSCHRIFT
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Untitled
Abstract: No abstract text available
Text: FCI Semiconductor 6.0 A M P KBPC6 Series Preliminary Data Sheet S ing le Phase S ilicon Bridge Description Mechanical Dimensions KBPC6 Series Hole for # 6 Screw .040 Features O Small Size O Low Forward Voltage Drop O UL Recognition Available O_ 150 Amp Surge Overload Rating
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Untitled
Abstract: No abstract text available
Text: polyfet rf devices F9012 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet',tm process features gold metal for greatly extended lifetime. Low output capacitance
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F9012
VGS12V
1110AvenidaAcaso,
72mOCH
D0D0273
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Untitled
Abstract: No abstract text available
Text: TIED87, TIED88, TIED 89 Reference Diode Pairs Texas Optoelectronics, Inc. DESCRIPTION FEA TU R ES These diode pairs consist of an avalanche photodiode APD and a small reference diode that have been manufactured together to ensure close matching of both the breakdown voltages
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TIED87,
TIED88,
000D524
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Untitled
Abstract: No abstract text available
Text: 1.8 x 5.3 mm LED Array G26XB. G28XB and G38XB Series The G26XB, G28XB and the G38XB series are each made up of the same rectangular LED lamps. The maximum number of lamps per array is 10, 5, and 12 respectively. The G26XB holder has a 1 mm wide shoulder top and bottom. The G28XBhas a
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G26XB.
G28XB
G38XB
G26XB,
G26XB
G28XBhas
G3812B/4E
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ISD1000A
Abstract: No abstract text available
Text: INFORMATION STORAGE <§> De v ic e s ß " OiipCorder' HCHMOCOCVÍYUO I S D 1 0 0 0 A S e r ie s Single-Chip Voice Record/Playback Devices 16- and 20-Second Durations FEATURES • Easy-to-use single-chip voice record/play back solution Fully addressable to handle multiple
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20-Second
100-year
ISD1000A
ISD10
28-Pin
ISD1016AP
ISD1020AP
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300D
Abstract: 400M L2008
Text: polyfet rf devices L2008 PATENTED GOLD METALIZED General Description Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet"1,11 process features gold metal for greatly extended lifetime. Low output capacitance
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L2008
72mOCH
300D
400M
L2008
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b72c
Abstract: L72s T1405
Text: SSE J> OAK TECHNOLOGY INC b72TMQS 0 0 0 0 2 4 1 T 431 « O A K T - v s t - 3 3 - n — naanm i V C E R U OAK TECHNOLOGY, INC. •••tim ti ••••m u ■■■ m ini May 1992 OTI-95C71 Video Compression/Expansion Processor DISTINCTIVE CHARACTERISTICS
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b72TMQS
OTI-95C71
16-word
b72T405
b72T4G5
G002b7
b72c
L72s
T1405
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lt 7209
Abstract: 7002 transistor sm EC112
Text: MôôbSlO OOOOHbb □ O I S O 45E D ISOCOM COMPONENTS LTD t H ll AV1X, H ll AV2X, H ll AV3X ._ % r ÆjH.j M m J - ifè -î « I » ! OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT DESCRIPTION The HI 1 AV is a optically coupled isolator consisting o f a Gallium Arsenide infrared emitting diode and a
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H11AV1X
H11AV3X
Vcc-10V
Rl-100R
lt 7209
7002 transistor sm
EC112
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