2N3904
Abstract: 2N3906
Text: D Series D05SE60F 5 Volt Input Dc to Ac Inverter The D05SE60F is a generic dc to ac inverter designed to generate 6 mArms into a 350 - 550 volt load CCFL from a nominal 5 volt dc source. 1. -Vin 2. +Vin 3. Enable/PWM 4. ACout 5. ACreturn 6. N/C This view is from the top looking through pcb. It depicts layout for inverter to plug into.
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D05SE60F
D05SE60F
2N3904
2N3906
2N3904
2N3906
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2N3904
Abstract: 2N3906 2n3906 equivalent
Text: D Series D05SE50 5 Volt Input Dc to Ac Inverter The D05SE50 is a generic dc to ac inverter designed to generate 5 mArms into a 270 - 370 volt load CCFL from a nominal 5 volt dc source. 1. -Vin 2. +Vin 3. Enable/PWM 4. ACout 5. ACreturn 6. N/C This view is from the top looking through pcb. It depicts layout for inverter to plug into.
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D05SE50
D05SE50
2N3904
2N3906
2N3904
2N3906
2n3906 equivalent
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24v dc to ac inverter circuit
Abstract: 2N3904 2N3906 DC DC INPUT 24V OUTPUT 8V
Text: D Series D05SE60 5 Volt Input Dc to Ac Inverter The D05SE60 is a generic dc to ac inverter designed to generate 6 mArms into a 350 - 550 volt load CCFL from a nominal 5 volt dc source. 1. -Vin 2. +Vin 3. Enable/PWM 4. ACout 5. ACreturn 6. N/C This view is from the top looking through pcb. It depicts layout for inverter to plug into.
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D05SE60
D05SE60
2N3904
2N3906
24v dc to ac inverter circuit
2N3904
2N3906
DC DC INPUT 24V OUTPUT 8V
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d05s60c
Abstract: IDT05S60C JESD22
Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior
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IDT05S60C
PG-TO220-2-2
D05S60C
d05s60c
IDT05S60C
JESD22
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D05S120
Abstract: idh05s120 JESD22
Text: IDH05S120 thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • Temperature independent switching behavior V DC 1200
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IDH05S120
PG-TO220-2
PG-TO220ngerous
D05S120
idh05s120
JESD22
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D05S60C
Abstract: No abstract text available
Text: IDT05S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 12 nC IF 5 A • No reverse recovery / No forward recovery • No temperature influence on the switching behavior
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IDT05S60C
PG-TO220-2-2
IDT05S60C
PG-TO220-2-2
D05S60C
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D05S60
Abstract: schottky 400v Q67040S4644 SDT05S60
Text: SDT05S60 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode Product Summary • Revolutionary semiconductor V 600 VRRM material - Silicon Carbide • Switching behavior benchmark Qc 14 nC • No reverse recovery
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SDT05S60
PG-TO220-2-2.
D05S60
Q67040S4644
PG-TO-220-2-2
D05S60
schottky 400v
Q67040S4644
SDT05S60
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philips 4859
Abstract: No abstract text available
Text: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency
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bbS3T31
D05SB11
BFR505
BFR505
philips 4859
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AM27S03
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} 0257528 0ES7S5ä D05SSti3 Q T|~ ADV M ICRO MEMORY 89D 25563 D ^ T -4 6 -2 3 -0 8 Am27S02/Am27S03 P 64-Bit Inverting-Output Bipolar RAM DISTINCTIVE CHARACTERISTICS • • • Fully decoded 16 word x 4-bit low-power Schottky RAMS Ultra-Fast Version: Address access time 15 ns
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D05SSti3
Am27S02/Am27S03
64-Bit
Am27S02
Am27S03
74S289,
74S189,
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Untitled
Abstract: No abstract text available
Text: üMnnM ^[]=ü January 29, 1998 D05 STUD HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com HIGH CURRENT, HIGH DENSITY, ISOLATED, SILICON POWER RECTIFIER D05STUD • • • • • SET050203 SET050219 SET050212
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SET050203
SET050219
SET050212
SET050204
SET050211
TEL805-498-2111
D05STUD
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Untitled
Abstract: No abstract text available
Text: D05 STUD HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY January 29, 1998 TEL805-498-2111 FAX:805-498-3804 W E B :http://www.semtech.com HIGH CURRENT, HIGH DENSITY, ISOLATED, SILICON POWER RECTIFIER D05STUD • • • • • SET050203 SET050219 SET050212 SET050204
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TEL805-498-2111
D05STUD
SET050203
SET050219
SET050212
SET050204
SET050211
50V-1000V
SET05*
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Untitled
Abstract: No abstract text available
Text: !» GEC P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION SEMICONDUCTORS DS3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY S u p e rs e d e s F e b ru a ry 1 9 9 2 ed itio n The P1480 LAN CAM is a 1K X 64-bit fixed-widlh CMOS Content-addressable Memory (CAM aimed at address
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DS3112-2
P1480
1kx64-BIT
P1480
64-bit
D05S4Q2
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Untitled
Abstract: No abstract text available
Text: For Im eiiaft M i m e , Coniaci Your Local Salesperson REF101 Precision VOLTAGE REFERENCE FEATURES APPLICATIONS • • • • • • PRECISION CALIBRATED VOLTAGE STANDARD +10.00V OUTPUT HIGH ACCURACY: ±0.005V VERY LOW DRIFT: 1ppm/°C max EXCELLENT STABILITY: 50ppm/1000hrs
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REF101
50ppm/1000hrs
REF101
10kHz
300pF
0D255Ã
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ASTM d 454
Abstract: XFWB2256
Text: 1. Dimensions: 3. Electrical Specifications @25*C Turns Ratio: P ins< 20-1 : 4 - 5 ) : ( 6 - 7 ) :(1 0 -1 1) = 1:1 ¿3% X <-> o tû C\j O C¡ □o o D M O O Á H-Œ — Á , d o 0 .0 3 0 0.01 5 0 .0 5 0 OCL: 2 2 5 u H Min @ 100KHz 5 0 m V DO tsi .
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XFWB2256-SM
XFWB2Z56â
Nov-02-06
Nov-02-06
ASTM d 454
XFWB2256
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Untitled
Abstract: No abstract text available
Text: ADVANCE 8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM MICRON* I TECHNOLOGY, INC. 8Mb SYNCBURST SRAM MT58L512L18F, MT58L256L32F, MT58L256L36F; MT58L512V18F, MT58L256V32F, MT58L256V36F 3.3V Supply, 3.3V or 2.5V I/O, Flow-Through FEATURES • • •
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MT58L512L18F,
MT58L256L32F,
MT58L256L36F;
MT58L512V18F,
MT58L256V32F,
MT58L256V36F
expansi00)
MT58L512L18F
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Untitled
Abstract: No abstract text available
Text: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì PD42S16165L, 4216165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page
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16-BIT,
PD42S16165L,
4216165Lare
uPD42S16165L
4216165L
50-pin
42-pin
6165L-A
L427525
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT M PD4516421,4516821,4516161 16M bit Synchronous DRAM Description The UPD4516421, UPD4516821, uPD 4516161 are high-speed 16 777 2 1 6-bit synchronous dynamic random-access memories, each organized as 2 097 152-word x
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PD4516421
UPD4516421,
UPD4516821,
152-word
576-word
288-word
x16-bit
400-mil
44-pin
400-mil,
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Philips FA 261
Abstract: No abstract text available
Text: Philips Semiconductors N bbS B IB l AMER 0 0 2 5 TtiT M A P X PH ILIP S /D IS C R E TE Product specification b?E D NPN 9 GHz wideband transistor FEATURES BFS505 PIN CONFIGURATION PINNING PIN DESCRIPTION • Low current consumption • High power gain •
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BFS505
OT323
MBC87I0
OT323.
OT323
Philips FA 261
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Untitled
Abstract: No abstract text available
Text: Preliminary la formation 20695D/0 - 14 A M D il AMD-K6 MMX Processor Data Sheet April 1997 Electrical Data 14.1 Operating Ranges The functional operation of the AMD-K6 MMX processor is guaranteed if the voltage and temperature parameters are within the limits defined in Table 44.
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20695D/0
D257525
QDS2B71
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G055175
Abstract: Z86C9320PEC HP30C DD2S173 86c91
Text: ZIL06 INC 4bE D • =^64043 DD2S173 S P r e l im in a r y P r o d u c t S p e c if ic a t io n T -W -H -u tb Z86C93 CMOS Z8 MULT/DlV MICROCONTROLLER FEATURES ■ Com plete m icrocontroller, 24 I/O lines, and up to 64 Kbytes of addressable external space each tor program
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ZIL06
DD2S173
Z86C93
16-bit
32-bit
256-byte
G055175
Z86C9320PEC
HP30C
86c91
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99C68-35
Abstract: No abstract text available
Text: ADV MICRO {MEMORY} D Ê | 025752Û OOESbOb H n Am99C68/Am99CL68 4096 x 4 CMOS Static R /W Random-Access Memory 0 2 5 7 5 2 8 ADV MICRO <MEMORY 89D 25606 D T-46-23-08 > 3 DISTINCTIVE CHARACTERISTICS - Standby: High speed — access times as fast as 35 ns Fully static storage and interface circuitry
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Am99C68/Am99CL68
T-46-23-08
Am99C68
Am99CL68
20-pin,
300-inch
99C68-35
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74HCT688B1
Abstract: 74hct688m
Text: r r z SGS-THOMSON Ä T # [j* M Œ O T ë K i M54HCT688 M74HCT688 8 BIT EQUALITY COMPARATOR • HIGHSPEED tpo = 17 ns (TYP.) AT Vcc = 5 V ■ LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT T a = 25 ’ C ■ COMPATIBLE WITH TTL OUTPUTS V ih = 2V (MIN.) V il = 0.8V (MAX)
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M54HCT688
M74HCT688
54/74LS688
M54HC
T688F1R
74HCT688M
74HCT688B1R
74HCT688C1R
D05S1S5
74HCT688B1
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internal diagram of ic 4017
Abstract: 4017 equivalent ic 4017 PIN DIAGRAM truth table of 4017 M74HC4017B1 truth table of IC 4017
Text: r Z Z SGS-THOMSON * 7 # « M iy iÛ ïlM M S M54HC4017 M74HC4017 DECADE COUNTER/DIVIDER HIGH SPEED tpD = 21 ns typ. AT Vcc = 5V LOW POWER DISSIPATION Icc = 4 |iA (MAX.) AT Ta = 25 °C HIGH NOISE IMMUNITY V nih = V nil = 28 % Vcc (MIN.) OUTPUT DRIVE CAPABILITY
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M54HC4017
M74HC4017
4017B
54HC4017F1R
M74HC4017B1
74HC4017M
74HC4017C1R
M54/7apacitance
005520b
74HC4017
internal diagram of ic 4017
4017 equivalent
ic 4017 PIN DIAGRAM
truth table of 4017
truth table of IC 4017
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du27
Abstract: AL3124 d04s DU32 1-23AL
Text: DENSE-PAC 1152 Megabit CMOS DRAM MI C R O S Y Ë T EM S DPD16MS72RW5 ADVANCED INFORMATION PIN-OUT DIAGRAM DESCRIPTION: The DPD16MS72RW5 is the 16 Meg x 72 Dynamic RAM module in the family of Super DIMM modules that utilize the new and innovative space saving TSOP
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DPD16MS72RW5
DPD16MS72RW5
168-pin
30A182-CO
du27
AL3124
d04s
DU32
1-23AL
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