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    D031 Search Results

    D031 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    G861AD03112YB1HR Amphenol Communications Solutions Board mount - Header Plug - Wafer 2.54mm Pitch Right Angle,1x3Pin,Matte Tin,NY9T,Tail=3.4mm,Color-Black,Friction Visit Amphenol Communications Solutions
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    D031 Price and Stock

    Infineon Technologies AG IPD031N06L3GATMA1

    MOSFET N-CH 60V 100A TO252-3
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    DigiKey IPD031N06L3GATMA1 Reel 60,000 2,500
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    Mouser Electronics IPD031N06L3GATMA1 4,795
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    Bristol Electronics IPD031N06L3GATMA1 566
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    Chip1Stop IPD031N06L3GATMA1 Cut Tape 10,124
    • 1 $2.32
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    EBV Elektronik IPD031N06L3GATMA1 15 Weeks 2,500
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    Win Source Electronics IPD031N06L3GATMA1 117,500
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    Kyocera AVX Components LD031C103JAB2A

    CAP CER 10000PF 100V X7R 0603
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    DigiKey LD031C103JAB2A Digi-Reel 11,100 1
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    LD031C103JAB2A Cut Tape 11,100 1
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    LD031C103JAB2A Reel 4,000 4,000
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    Wima MKS2D031501C00KSSD

    CAP FILM 0.15UF 10% 100VDC RAD
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    DigiKey MKS2D031501C00KSSD Bulk 7,985 1
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    Wima MKP2D031001F00JO00

    MKP 2 0.1 F 100 VDC 5X10X7.2 PCM
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    DigiKey MKP2D031001F00JO00 Cut Tape 6,686 1
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    MKP2D031001F00JO00 Ammo Pack 6,600 1,100
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    Wima FKP3D031004D00KSSD

    CAP FILM 0.1UF 10% 100VDC RAD
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    DigiKey FKP3D031004D00KSSD Bulk 2,451 1
    • 1 $2.07
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    • 100 $0.9333
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    D031 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSB_D028-D031_GB 01.10.2003 12:21 Uhr Seite D.31 WDT 1.5/1 1.5 mm2 Disconnection lower level 6.4 x 112 x 66.7 10 / 2.5 0.13 . 2.5 WDT 1.5/2 1.5 mm2 Disconnection both levels IEC 60947-7-1 / VDE 0100-537 IEC UL CSA 250 300 300 10 10 10 1.5 AWG 22 …14 AWG 26…14


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    PDF D028-D031 5X100 WEW-35/2

    DIN-46228-4

    Abstract: E60693 1716320000 1716510000 D022-D031
    Text: SELI_2005_D022-D031_R.qxd 02.05.2005 17:06 Seite D.29 Розетки разъёмов с лепестковым зажимом BL 5.00 BL 5.08 PCB BL 5.00 BL 5.08 • 0.13 – 2.08 мм2 IEC / 26 – 14 AWG (UL) • 250 В (IEC) / 300 V (UL) • 11 A (IEC) / 10 A (UL)


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    PDF D022-D031 LR12400 E60693 DIN-46228-4 E60693 1716320000 1716510000

    d0320

    Abstract: RL-D0320SBRW RL-D0310GDBW RL-D0310YCBW RL-D0320OCAW RL-D0320RCBW RL-D0320
    Text: 0.3 Dual Digit Display. Part Number: RL-D0310GDBW RL-D0320SBRW RL-D0310YCBW RL-D0320RCBW RL-D0320OCAW Features 1.LOW POWER CONSUMPTION. 2.RELIABLE AND RUGGED. 3.EXCELLENT UNIFORMITY OF LIGHT OUTPUT. 4.SUITABLE FOR LEVEL INDICATOR. 5.I.C COMPATIBLE. 6.LONG LIFE-SOLIDSTATE RELIABILTY.


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    PDF RL-D0310GDBW RL-D0320SBRW RL-D0310YCBW RL-D0320RCBW RL-D0320OCAW RL-D0310 RL-D0320 IF-20mA d0320 RL-D0320SBRW RL-D0310GDBW RL-D0310YCBW RL-D0320OCAW RL-D0320RCBW RL-D0320

    18f24k22

    Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •


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    PDF PIC18 F2X/4XK22 28/40/44-Pin, DS41412B DS41412B-page 18f24k22 PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi

    PIC16f690 example codes

    Abstract: PIC16F631 PIC16f690 spi example codes PIC16F677 PIC16F687 PIC16F689 thermistor 10k PIC16F690 PWM c programming Assembler programming for PIC 16f690 temperature MPASM 16f690
    Text: PIC16F631/677/685/687/689/690 Data Sheet 20-Pin Flash-Based, 8-Bit CMOS Microcontrollers with nanoWatt Technology 2006 Microchip Technology Inc. Preliminary DS41262B Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF PIC16F631/677/685/687/689/690 20-Pin DS41262B DS41262B-page PIC16f690 example codes PIC16F631 PIC16f690 spi example codes PIC16F677 PIC16F687 PIC16F689 thermistor 10k PIC16F690 PWM c programming Assembler programming for PIC 16f690 temperature MPASM 16f690

    PIC18F example code CAN bus

    Abstract: 18f14k50 PIC18f external interrupt example codes PIC18F sleep mode example 3 phase pwm generator pic18f PIC18f clearing ram pic18f for 3 phase inverter pic 18f14k50 PIC18f example codes PIC18F45k20 examples
    Text: PIC18F/LF1XK50 Data Sheet 20-Pin USB Flash Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41350D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF PIC18F/LF1XK50 20-Pin DS41350D DS41350D-page PIC18F example code CAN bus 18f14k50 PIC18f external interrupt example codes PIC18F sleep mode example 3 phase pwm generator pic18f PIC18f clearing ram pic18f for 3 phase inverter pic 18f14k50 PIC18f example codes PIC18F45k20 examples

    PIC18F25J11

    Abstract: PIC18F26J11 pic 18f26j11 PIC18f example codes CTMU PIC18F46J11 PIC18F24J11 DS39932D PIC18F usart init example PIC18 example C18 RTCC PIC16 lin bus example codes C
    Text: PIC18F46J11 Family Data Sheet 28/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2011 Microchip Technology Inc. DS39932D Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.


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    PDF PIC18F46J11 28/44-Pin, DS39932D DS39932D-page PIC18F25J11 PIC18F26J11 pic 18f26j11 PIC18f example codes CTMU PIC18F24J11 DS39932D PIC18F usart init example PIC18 example C18 RTCC PIC16 lin bus example codes C

    Untitled

    Abstract: No abstract text available
    Text: 5TE T> m 0257527 D0312M0 b37 • AMD3 _ A]>V fllCRQ TELECOM -p-ir-n- ? Am7901 B/C Advanced Micro Devices Subscriber Line Audio-Processing Circuit (SLAC) WORLD-CHIP DISTINCTIVE CHARACTERISTICS ■ Combination CODEC and Fitter ■ No trimming or adjustments required


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    PDF 0312M Am7901 096-MHz, 64-channel Am7901C PL028 PL032 CD040 PD040

    BUV26

    Abstract: BUV26A 11/BUV26
    Text: PHILIPS INTERNATIONAL 4SE D 711002b D031GbT 1 EiPHIN BUV26 BUV26A SILICON POWER TRANSISTORS High-speed, glass-passivated npn power transistors in a T 0-22 0 envelope intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control.


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    PDF 711002b D031GbT BUV26 BUV26A T0-220 O-220AB. 711005b BUV26A 11/BUV26

    D0310

    Abstract: BUV27AF BUV27F L100 A10q 27af
    Text: _ 711QäBfci liU □ Cb D0310ñS T D P H I N I I PHILIPS INTERNATIONAL MSE ]> O BUV27F BUV27AF J l T -3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS H igh-voltage, high-speed, glass-passivated npn p o w er transistor in a S O T 1 8 6 envelope w ith electrically


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    PDF D0310flS BUV27F BUV27AF OT186 T-33-07 7z94453 D0310 BUV27AF L100 A10q 27af

    Untitled

    Abstract: No abstract text available
    Text: 3QE 3> • 7^237 D0311S1 =1 " 3 S- pô\~ f Z 7 SGS-THOMSON ^ 7# 5 L iÛ T O « ! 2 N2368 S G S-THOMSON HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2368 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed spe­


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    PDF D0311S1 N2368 2N2368

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • bbS3T31 D0314T7 TT? W APX Objective specification NPN 9 GHz wideband transistor BFP540 N AMER PHILIPS/DISCRETE FEATURES b'lE D — PINNING • High power gain PIN • Low noise figure 1 collector DESCRIPTION • High transition frequency


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    PDF bbS3T31 D0314T7 BFP540 OT173X) BFP540 OT173 OT173X RE120

    Untitled

    Abstract: No abstract text available
    Text: N E C ELECTRONICS INC 3flE D • ^ 2 7 3 2 5 D031b04 1 ■ NECE M C -4 2 1 0 0 0 A 8 1 ,0 4 8 ,5 7 6 x 8 -B it CMOS D ynam ic RAM M odule NEC Electronics Inc. Description Pin Configurations The M C -421000A 8 is a fast-page 1,048,576-word by 8-bit C M O S dynam ic R A M module designed to operate


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    PDF D031b04 -421000A 576-word C-421000A8 /iPD421000

    transistor 1002

    Abstract: transistor 835 BFQ295 BFQ296
    Text: b b 5 3 T 31 D0317fl^ 573 • APX Preliminary specification Philips Semiconductors NPN HDTV video transistor —^ BFQ296 N FEATURES AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages PIN DESCRIPTION • Low output capacitance 1 emitter • High gain bandwidth product


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    PDF BFQ296 BFQ295. BFQ296 OT128B OT128B. transistor 1002 transistor 835 BFQ295

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors b b5 3 T 31 D0317fl^ 573 | • APX Preliminary specification NPN HDTV video transistor ^ BFQ296 N FE A T U R E S AUER PHILIPS/DISCRETE b'lE D PINNING • High breakdown voltages • Low output capacitance PIN 1 emitter • High gain bandwidth product


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    PDF D0317fl^ BFQ296 BFQ295. BFQ296 OT128B OT128B.

    lc 945 p transistor NPN

    Abstract: BFR96S
    Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device


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    PDF hhS3R31 D031A15 BFR96S BFQ32S. BFR96S/02 lc 945 p transistor NPN BFR96S

    Untitled

    Abstract: No abstract text available
    Text: Ph|JjP^ j2jconductors^^B^ ^^53*131 D0317S7 7T0 • AP X ^^^^relimina^^specification NPN HDTV video transistor BFQ293 N AMER P H I L I P S / D I S C R E T E FEATURES b^E J> PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter


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    PDF D0317S7 BFQ293 BFQ292. BFQ293

    BTA10

    Abstract: No abstract text available
    Text: 3ÜE 7 ^ 7# » • 7 ^ 2 3 7 D031S12 2 ■ _ " p ¿ S ' i S — S G S - T H O M S O N [ ¡ « ^ » [itm r iH m o o s _ B T A 1 0 A W S 6 S-TH0MS0N SNUBBERLESS TRIACS ■ It r m s = 1 0 A at Tc = 90 °C. : 200 V to 800 V. « Ig t = 75 mA (QI-ll-Ill .


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    PDF D031S12 E81734) CB-415) BTA10

    d0313

    Abstract: 2N1778 2n1772 2N1770 2n2619
    Text: 3DE ]> • 7^237 D031354 1 ■ S G S -T H O M S O N Q JIC TM M Û S T '2 5 -IS 2N 1770 2N 1778 2 N 2 6 19 S G S-TH0MS0N THYRISTORS ■ GLASS PASSIVATED CHIP ■ HIGH STABILITY AND RELIABILITY A TO 64 Metal DESC RIPTIO N General purpose SCR suited for power supplies up


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    PDF D031354 1778/2N T-25-15 d0313 2N1778 2n1772 2N1770 2n2619

    BFQ108

    Abstract: No abstract text available
    Text: ^ 5 3 ^ 3 1 D031bb4 512 M APX Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ108 fc,*ÌE D N AMER PHILIPS/DISCRETE PINNING DESCRIPTION PIN The BFQ108 is a high output voltage PNP transistor in a SOT122A envelope, primarily intended for use


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    PDF DD31bb4 BFQ108 BFQ108 OT122A 45005B)

    Untitled

    Abstract: No abstract text available
    Text: 3DE D fZ 7 ^ 7# • 7^237 D0316b0 3 ■ _' T ' Z S - l S S C S -T H O M S O N TXD V 208 -> 808 S G S-THOMSON ALTERNISTORS ■ di/dt c > 28 A/ms (400 Hz) ■ INSULATING VOLTAGE : 2500 V rms (t < 1 mn - F = 50 Hz) ■ UL RECOGNIZED (E81734) A PPLICATIO N S


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    PDF D0316b0 E81734)

    BTA06-200

    Abstract: No abstract text available
    Text: 3QE D H 7^237 D0314Ô4 1 • ^ T - Z S - [ 55 SGS-THOMSON B T A 06 A W [ » ^ t & e g T T liM O t g S S G S-TH0MS0N SNUBBERLESS TRIACS ■ Itrms = 6 A at Tc = 95 °C. ■ V drm : 200 V to 800 V. ■ Ig t = 75 mA Ql-II-lll . ■ GLASS PASSIVATED CHIP. ■ HIGH SURGE CURRENT : It s m = 60 A.


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    PDF D0314 T-25-15 D88BTA06ABCWP4 CB-415) BTA06-200

    cd018

    Abstract: No abstract text available
    Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C


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    PDF JS633 TMS28F033 4194304-BIT 80-PIN 16/32-bit cd018

    2269H

    Abstract: No abstract text available
    Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY7216C1EG-80H 216-WORD 72-BIT THMY7216C1EG TC59S6408FT 72-bit THMY7216C1EG) 2269H