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    Text: International iMiRectifier P D - 9 .1 3 3 9 IRF520N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • • • • Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 1 0 0 V ^ D S o n = Id =


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    PDF IRF520N 5S452 D023411