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    D-636 TRANSISTOR Search Results

    D-636 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D-636 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IGBT Power Module siemens ag

    Abstract: BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring
    Text: Investigation of the static and dynamic current distribution in paralleled IGBT modules A. Mauder and W. Scholz Siemens AG, Semiconductor Group, Balanstr. 73, D-81541 Munich, Germany Tel.: +89/636-24197 Mauder , +89/636-28143 (Scholz); Fax: +89/636-22522


    Original     		PDF D-81541 IGBT Power Module siemens ag BSM100GD120DN2 siemens igbt PCIM 24197 BSM75GD120DN2 siemens igbt chip Semiconductor Group igbt siemens igbt wiring

    BC638

    Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


    Original     		PDF BC636/D BC636 BC638 BC640 BC636/D* BC638 bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola

    bc638 motorola

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80


    Original     		PDF BC636/D BC636 BC638 BC640 BC636/D* bc638 motorola

    Untitled

    Abstract: No abstract text available
    Text: BC635/636 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.


    Original     		PDF BC635/636 StyleTO-92

    bc 352 b

    Abstract: siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366
    Text: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360


    Original     		PDF Q68000-A3360 Q68000-A2285 Q68000-A3361 bc 352 b siemens heat sink bc 640 bc 639 DATASHEET bc 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 Q68000-A3365 Q68000-A3366

    bc 640

    Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
    Text: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365


    Original     		PDF Q68000-A3365 Q68000-A3366 Q68000-A3367 bc 640 BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636

    222259116641

    Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
    Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4


    Original     		PDF BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module

    2N4351 MOTOROLA

    Abstract: 3N170 3c169 DFM12 3N169
    Text: MOTOROLA SC { D I O D E S / O P T O } 34 636 72 55 M O T O RO LA SC DIODES/OPTO DE|b3b755S CID3ÛD41 3^ c 38041 FIËLD-EFFECT TRANSISTORS DICE (continued) D T - JJT- Z - i 3C169 DIE NO. LINE SOURCE — DFM122 This die provides performance equal to or better than that of


    OCR Scan     		PDF b3b755S DFM122 2N4351 3N169 3N170 3N171 MMCS0122 3C169 2N4351 MOTOROLA 3c169 DFM12

    ST2S05

    Abstract: st2506
    Text: SLOTTED OPTSCAL SWITCH QPTDELECiROHiCi CNY36 £ h D1 02 *J L l O r D | \ 0 b| bt SECTION X - X LEAD PROFILE T SYMBOL MILLIMETERS MIN. MAS*. A 107 11.0 A. 3,0 3.2 b ' .800 .750 b, .50 MOM 0, 11.5 12.3 3.0 D, 3.3 7.S 6.9 * 2.3 2.8 . * E? 6.15 636 L B.00


    OCR Scan     		PDF CNY36 27nim ST2S05 ST2506 ST2S05 st2506

    transistor C 639 W

    Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
    Text: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A


    OCR Scan     		PDF 150mA) F139B. CB-76 transistor C 639 W transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639

    hc911

    Abstract: HC9115 7252 TRANSISTOR
    Text: MO TOROLA SC -CLOGIO fll DË|b3t.7252 DOVVTSb ^ 636 7 2 5 2 MOTOROLA SC L O G IC M O TO RO LA 89D 77956 • SEMICONDUCTOR TECHNICAL DATA M C 5 4 /7 4 H C 9 1 14 M C 5 4 /7 4 H C 9 1 15 Product Preview Nine-W ide Schm itt-Trigger Buffers with Open-Drain Outputs


    OCR Scan     		PDF MC54/74HC9114 MC54/74HC9115 MC54/74HC9115 HC9114 HC9115 hc911 HC9115 7252 TRANSISTOR

    BC640

    Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
    Text: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.


    OCR Scan     		PDF 635/BC 637/BC BC640 bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143

    TRANSISTOR 636

    Abstract: pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639
    Text: BC 636 g Q 638 PNP S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR PNP S ILIC IU M , PLA N A R E P IT A X IA L BC 640 Compl. of BC 635, BC 637, BC 639 - Driver stages of audio amplifiers " " Etages Drivers d'am plificateurs BF Maximum power dissipation


    OCR Scan     		PDF 150mA) CB-76 TRANSISTOR 636 pnp transistor d 640 BC63B 639 TRANSISTOR PNP transistor BC 638 transistor BC 635 bc 640 bc638 638 transistor transistor BC 639

    transistor BC 236

    Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
    Text: *T I 17E » TELEFUNKEN E L E C T R O N IC TTdlUKFCtfllMOSlKfi • IAL66 û'tëOCHb DODTB^l BC 636 • BC 638 • BC 640 electronic Creata« léchnofogtes Silicon PNP Epitaxial Planar Transistors Applications: For complementary AF driver stages .Features:


    OCR Scan     		PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor

    BC639

    Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
    Text: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.


    OCR Scan     		PDF 636/BC 638/BC BC639 r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5011

    transistor NEC D 882 p

    Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain


    OCR Scan     		PDF 2SC5011 2SC5011-T1 transistor NEC D 882 p 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P

    bc 540

    Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
    Text: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500


    OCR Scan     		PDF BCW90 CB-76 bc 540 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635

    " transistor" fgs 3

    Abstract: Fly DS 100
    Text: SIEMENS BUZ 91 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 91 b 8.5 A W>s 600 V ^bs on 0.8 n Package Ordering Code TO-220 AB C67078-S1342-A2 Maximum Ratings Parameter Symbol Continuous drain current


    OCR Scan     		PDF O-220 C67078-S1342-A2 " transistor" fgs 3 Fly DS 100

    GE-MOV

    Abstract: varistor 82z2 Varistor RU 22z1 VARISTOR 56z2 VARISTOR 39Z1 gemov 18Z1 capacitor 47z1 33Z1
    Text: ZA SERIES R EPLA C EM EN T FO R the following when used as transient suppressor: • Selenium Tryectors • Zener Diodes • Silicon Carbide • Gas Discharge Tubes • R-C Networks non-dv/dt • Neon Bulbs • Electronic Crowbar Circuits APPLICATIONS •


    OCR Scan     		PDF

    transistor C636

    Abstract: case sot30 BCX75 C637 BCX76 SOT-30
    Text: BCX 75, BCX76 PNP Transistors for AF pre-stages, driver stages and switching applications B C X 7 5 and BCX 76 are epitaxial PNP silicon planar transistors in a package 10 A 3 DIN 41868 sim. SO T-30 . The transistors are suitable for use in AF preand driver stages as well as for switching applications.


    OCR Scan     		PDF BCX76 BCX75 OT-30) Q62702-C 636-S1 Q62702-C636-S2 Q62702-C636-S3 Q62702-C637-S1 Q62702-C637-S2 Q62702-C637-S3 transistor C636 case sot30 C637 BCX76 SOT-30

    B0415

    Abstract: b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063
    Text: P O L A R IT Y Power Transistors TYPE NO. C A SE H M A X IM U M R A T IN G S V C E S A T FE Pd (W ) 'c (A ) V CEO (V ) m in m ax B D 239 BD239A BD239B B D 240 BD240A N N N P P T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 T O -2 2 0 30 30 30 30 30 2 2 2 2


    OCR Scan     		PDF BD239 O-220 BD240 BD239A BD240A BD239B BD240B BD240 B0415 b0416 B0633 b0636 MH8106 B0635 BD415 BD416 BD417 b063

    diodo 1n4001

    Abstract: 3L4 MOSFET VR 100K preset kl 05 diodo K38 mosfet DIODO SIEMENS 3l4 diode B64290-K38-X38 diodo detector POT 100K preset
    Text: >viyj>ciyi/i P re s e t/A d ju s ta b le O u tp u t C M O S In v e r tin g S w itc h in g R e g u la to rs The MAX635/MAX636/MAX637 inverting switching regu­ lators are designed for minimum component DC-DC conversion in the 5mW to 500mW range. Low power applications require only a diode, output filter


    OCR Scan     		PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 50ki2, 100pF diodo 1n4001 3L4 MOSFET VR 100K preset kl 05 diodo K38 mosfet DIODO SIEMENS 3l4 diode B64290-K38-X38 diodo detector POT 100K preset

    MAX635XCPA

    Abstract: MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA
    Text: 19-0918; Rev 0; 5/91 Preset/A djustable O utput CMOS inverting S w itching Regulators _ A p p lica tio n s Minimum Component, High-Efficiency DC-DC Converters Portable Instruments Battery Power Conversion Board Level DC-DC Conversion _ F e a tu re s


    OCR Scan     		PDF MAX635/MAX636/MAX637 500mW MAX635/636/637 100pF MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA