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    D 843 TRANSISTOR Search Results

    D 843 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 843 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    rca 3069

    Abstract: Avansys Power rca power transistor 3069 astec custom power RCA 432 CISPR22 AV60A-048L-033D025 AV60A-048L-033D Common Mode Choke 1mH, 12A k 3531 transistor
    Text: AV 6 0 A D u a l O u t p u t H a l f - b r i c k Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V and 3.3V/2.5V Dual Output 75W DC-DC Converter REV 01 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355


    Original     		PDF AV60A rca 3069 Avansys Power rca power transistor 3069 astec custom power RCA 432 CISPR22 AV60A-048L-033D025 AV60A-048L-033D Common Mode Choke 1mH, 12A k 3531 transistor

    CR21-103J-T

    Abstract: TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803
    Text: DEMO MANUAL DC140 DESIGN-READY SWITCHERS LTC1436-PLL 2-Output Synchronous Buck Converter with Versatile Frequency Controller U DESCRIPTIO Demonstration circuit DC140 is a 2-output, general purpose evaluation platform intended to demonstrate the many functions of the LTC 1436-PLL and to make it easy


    Original     		PDF DC140 LTC1436-PLL DC140 1436-PLL dc140f CR21-103J-T TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803

    NTE58

    Abstract: NTE59
    Text: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE58 NTE59 NTE58 NTE59

    mpsw56 transistor

    Abstract: No abstract text available
    Text: MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –80 Vdc Collector–Base Voltage VCBO –80 Vdc Emitter–Base Voltage VEBO –4.0


    Original     		PDF MPS6729 MPSW55 MPSW56 mpsw56 transistor

    p844m

    Abstract: p845 P843M MP844 D 843 Transistor "micro power systems" mp845 MP843 dual fet L6
    Text: aGE D • b 017 4 4.4 00033=10 5 I MICRO POWER SYSTEMS E /y i INC M P 843 MICRO POW ER SY ST EM S M P 844 M P 845 T'29'Z1 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL SILICON NITROX FIELD EFFECT TRANSISTORS DIFFUSED ISOLATED . en = 8nV/vr H T TYP.


    OCR Scan     		PDF MP843 10MI1 100Hz, 500/l/A 500//A 500//A p844m p845 P843M MP844 D 843 Transistor "micro power systems" mp845 dual fet L6

    D 843 Transistor

    Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843
    Text: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V


    OCR Scan     		PDF 840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843

    D 843 Transistor

    Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
    Text: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842


    OCR Scan     		PDF 840/FI-841/FI 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor 843FI e IRF 840 Application of irf840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840

    D 843 Transistor

    Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
    Text: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843


    OCR Scan     		PDF 840/FI-841 842/FI-843/FI IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843 IRF843FI D 843 Transistor irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv

    D 843 Transistor

    Abstract: 843 transistor
    Text: Central CZT3120 Semiconductor Corp. SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a


    OCR Scan     		PDF CZT3120 OT-223 CP312 14-November OT-223 D 843 Transistor 843 transistor

    Untitled

    Abstract: No abstract text available
    Text: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk


    OCR Scan     		PDF SMBTA13 SMBTA14 Q68000-A4331 Q68000-A4332 Q6800Q-A6475 Q68000-A6476 23b320

    UFN841

    Abstract: UFN041 mosfet ir 840 features Hjc 22
    Text: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown


    OCR Scan     		PDF T347Tb3 D01D7Ô UFN842 UFN843 UFN841 UFN041 mosfet ir 840 features Hjc 22

    Untitled

    Abstract: No abstract text available
    Text: DTB113ZK/DTB113ZS/DTB113ZF DTB113ZL/DTB113ZA/DTB113ZV 7 7 / T ransistors D T B 1 13 Z K /D T B 1 13 Z S /D T B 1 13ZF D T B 1 13 Z L /D T B 1 13 Z A /D T B 1 13 Z V {& triftM b 7 > v 7 7 h 7 > y 7 ^ < 7 / T r a n s i s t o r Switch Digital Transistors Includes Resistors)


    OCR Scan     		PDF DTB113ZK/DTB113ZS/DTB113ZF DTB113ZL/DTB113ZA/DTB113ZV

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2 S D 1 7 4 8 , 2SD1748, 2SD1748A 2 S D 1 7 4 8 A Package Dim ensions U n it ! mm Silicon NPN Triple-D iffused Planar D arlington Type 3.7m ax 7.3m ax. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B 1178A 3.2m ax. 0 .9 ± 0 . 1


    OCR Scan     		PDF 2SD1748, 2SD1748A 2SB1178, 2SB1748 2SB1748A 2SD1748 2SD1748A

    f840

    Abstract: IRF842R
    Text: 3 H A R R IS IR F840/841/842/843 IRF840R/841R/842R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 7A and 8A, 450V - 500V TOP VIEW • rDs on) = 0 .8 5H and 1.1 fl DRAIN (FLANGE) • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF F840/841/8 IRF840R/841R/842R/843R IRF840, IRF841, IRF842, IRF843 IRF840R, IRF841R, IRF842R IRF843R f840

    Untitled

    Abstract: No abstract text available
    Text: 23633^ o d o ü 7 3 h *ì g 7 • BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N -P-N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E BC818-25 = 6F BC818-40 = 6G PA CKA GE O U TLINE DETAILS A LL DIM ENSIO NS IN m m


    OCR Scan     		PDF BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40

    MJE370

    Abstract: MJE520
    Text: r ^ z 7 7 S G # S - T H O M S O MJE370 MJE520 N M ^ Q 0 !y = © r a © R l g S COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTION The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene­


    OCR Scan     		PDF MJE370 MJE520 O-126 G-243S MJE370-MJE520 MJE370 MJE520

    mje520

    Abstract: No abstract text available
    Text: • 7 ^ 5 3 7 0Qgq067 s g s - th o m 3 ■ *T s o n m je 3 ?o D [^@i[LiCT^ ô iD(gl_ S G S - T H OM S ON 3DE M JE520 D COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTIO N The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec


    OCR Scan     		PDF 0Qgq067 JE520 MJE370 MJE520 O-126 12t5237 T-33-09 mje520

    MAX843

    Abstract: No abstract text available
    Text: 19-0388; Rev 7 ; 3/96 JVW YXA JVX Low -Noise, R egulated, -2 V GaAsFET Bias F e a tu re s The M A X 8 40 /M A X 84 3/M A X 84 4 lo w -n o ise , in v e rtin g c h a rg e -p u m p p o w e r s u p p lie s are id e a l fo r b ia s in g GaAsFETs in cellular telephone transm itter am plifiers.


    OCR Scan     		PDF MAX840) MAX840 AX843/M AX844 MAX840 MAX843/MAX844 840/M 843/M MAX843/MAX844 MAX843

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ


    OCR Scan     		PDF Q62702-C2254 OT-23 0535b05

    irf 1962

    Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
    Text: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,


    OCR Scan     		PDF IRF840 IRF841 IRF842 IRF843 irf 1962 irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843

    2n2222 h 331 transistors

    Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
    Text: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300


    OCR Scan     		PDF BC107 BC108 BC109 BC140 BC141 BC337 BC337A BC338 BC368 BC375 2n2222 h 331 transistors 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 2n2222 331 transistors PNP 2n4403 331

    2sb1748

    Abstract: 2sb174 2SB1178 2SB1178A 2SD1748 2SD1748A
    Text: 2SD1748, 2SD1748A Power Transistors 2SD 1748, 2SD 1748A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3 . 7m a x 7.3max. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B1178A 0.9 :0.1 0.5max. I 3. 2m ax . • Features


    OCR Scan     		PDF 2SD1748, 2SD1748A 2SB1178, 2SB1178A 2SB1748 2SD1748 IH-25 2sb174 2SB1178 2SB1178A 2SD1748A

    Untitled

    Abstract: No abstract text available
    Text: A '21 03 SINGLE-TURN TRIMMERS oo MODEL 80 Description TO-9 Transistor Case Single Turn Wirewound 1/4' Round or Square Single Turn Cermet 3/8' Square Single Turn Cermet 1/2' Round Single Turn Wirewound Page 15 Page 14 Page 12 Page 15 100 to 20KO ±5% ±50 10ftto2Mn


    OCR Scan     		PDF 10ftto2Mn 100ft 100ft 100to Wat50Â 000vac 5Wat70Â 000MO 1000ENR 20KIT

    TIP11s

    Abstract: TIP116 TIP110 TIP111 TIP112 TIP115 TIP117 USA060
    Text: TIP115 TIP116 TIP117 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. N-P-N complements are


    OCR Scan     		PDF TIP115 TIP116 TIP117 220AB TIP110, TIP111 TIP112. TIP116 TIP11s TIP110 TIP112 TIP117 USA060