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    D 3141 TRANSISTOR Search Results

    D 3141 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 3141 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    p0102 transistor

    Abstract: pe 7059 transistor PE-51686 12 VOLT 50 AMP smps schematics DT3316P-XXX L68 MARKING CODE pe-51718 SMPS forward TUBE 6082 P0582
    Text: INDUCTORS POWER MAGNETICS TABLE of CONTENTS Miniature Surface Mount Power Inductors Ros 1 Series DT1608C-XXX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3 Ros 2 Series (DT3316P-XXX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3


    Original     		PDF DT1608C-XXX) DT3316P-XXX) P0770 DO1608C-XXX) P0751/2 DO3316P-XXX) P0762 DO3308P-XXX) PC503 p0102 transistor pe 7059 transistor PE-51686 12 VOLT 50 AMP smps schematics DT3316P-XXX L68 MARKING CODE pe-51718 SMPS forward TUBE 6082 P0582

    12 VOLT 50 AMP smps schematics

    Abstract: PE-51718 35 VOLT 3 AMP smps schematics PE-65300 layout 48 VOLT 150 AMP smps PE-64973 flyback transformer THT pin connections offline switcher P0584 transformer 12 volt 150 amp smps
    Text: TABLE of CONTENTS Gate Drive Transformers DC/DC Surface Mount Gate Drives for SELV Operation . . . . . . . . . . . . . . . . . . . . .2-3 UL/C-UL Recognized Through Hole Gate Drives . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 500 KHz Gate Drives . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


    Original     		PDF 500/reel 40/tube PE-682XX PC502 12 VOLT 50 AMP smps schematics PE-51718 35 VOLT 3 AMP smps schematics PE-65300 layout 48 VOLT 150 AMP smps PE-64973 flyback transformer THT pin connections offline switcher P0584 transformer 12 volt 150 amp smps

    MLT 22 452

    Abstract: PECL ABB 10BASE PLCC28 PE-95000 PE-68517L FEEDBACK EQUALIZER ERROR DE-SCRAMBLE TTL catalog H303
    Text: FASTPULSE MediaCAT HIGH SPEED LAN TRANSCEIVERS Twisted pair transceiver kit for TP-FDDI, 100BaseTX and ATM 155 Mbps Matched integrated circuit and magnetic module Flexible, cost-effective frontend solution General Description FASTPULSE MediaCAT Chip And Transformer is a transceiver


    Original     		PDF 100BaseTX PE-95000 PE-95010 PE-69016 con20 MLT 22 452 PECL ABB 10BASE PLCC28 PE-95000 PE-68517L FEEDBACK EQUALIZER ERROR DE-SCRAMBLE TTL catalog H303

    Untitled

    Abstract: No abstract text available
    Text: 3141, 3142, a n d 3143 SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications and switch points, designed to operate continuously over extended temperatures to +150°C, and are more


    OCR Scan     		PDF A3141ELL

    2N3820

    Abstract: No abstract text available
    Text: riOTOROLA SC -CDIODES/OPT0 } Type Number Page Number Page Number D-S D-S S-G Power 2N3743 3-105 3-107 3-107 3-100 3-109 3-109 3-111 3-111 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2-6 2-7 2-7 THYRISTORS 2-7 3-105 2N4199 through 2N4206 2-5 3-120 TRANSISTORS


    OCR Scan     		PDF 2N3743 2N3439 2N3440 2N3444S 2N3467 2N3468 2N34B5A 2N3486A 2N3715 2N3716 2N3820

    MA40S

    Abstract: MA40S-3irn A3144 D 3141 transistor SENSITIVE HALL-EFFECT SWITCHES A3141 A3143 RFT hall UGN 3141 D5DM
    Text: l i i i i SEN SITIVE HALL-EFFECT SW ITCH ES FOR H IG H - TEM PERATURE OPERATIO N These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +1506C, and are more stable with both


    OCR Scan     		PDF PH-003A DS0433Ã MA40S MA40S-3irn A3144 D 3141 transistor SENSITIVE HALL-EFFECT SWITCHES A3141 A3143 RFT hall UGN 3141 D5DM

    Untitled

    Abstract: No abstract text available
    Text: SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION Data Sheet 2 7 6 2 1 .6 * 3144 These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C , and are more stable with both


    OCR Scan     		PDF 0S0433Ã

    la 5752

    Abstract: No abstract text available
    Text: 5752 DUAL PERIPHERAL AND POWER DRIVER -TRANSIENT-PROTECTED OUTPUTS Com bining dual AND logic gates, high-current switching transistors, and transient suppression diodes in a bipolar m onolithic integrated circuit, this peripheral and power driver meets interface requirem ents


    OCR Scan     		PDF UDN5752M UDN5752M la 5752

    UDN5752M

    Abstract: A7900 UDN5732M A1174 GP-009 GP009
    Text: AL L E GRO MI C R OS Y S T E MS I NC 33E D • 050433Ô 0 Q0 S 2 1 Ô S ■ ALGR DUAL PERIPHERAL AND POWER DRIVER — TRANSIENT-PROTECTED OUTPUTS Com bining dual AND logic gates, high-current switching transistors, and transient suppression diodes in a bipolar m onolithic integrated


    OCR Scan     		PDF UDN5752M -9790B -7900B UDN5752M A7900 UDN5732M A1174 GP-009 GP009

    D 3141 transistor

    Abstract: 2044B 25CC 2SC4522
    Text: Ordering number: EN 3141A 2 S C 4 52 2 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures . Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage • Fast switching speed


    OCR Scan     		PDF 2SC4522 D 3141 transistor 2044B 25CC 2SC4522

    uPA63

    Abstract: UPA827TF UPA831TF NE685
    Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening


    OCR Scan     		PDF UPA800T UPA801T UPA802T UPA806T UPA807T UPA808T UPA809T URA810T UPA811T UPA812T uPA63 UPA827TF UPA831TF NE685

    MC10192

    Abstract: No abstract text available
    Text: MOTOROLA MC10192 QUAD B U S DRIVER The MC10192 contains four line drivers with com plementary outputs. Each driver has a Data D input and shares an Enable (E) input with another driver. The two driver outputs are the un­ committed collectors of a pair of N P N transistors operating as a


    OCR Scan     		PDF MC10192

    2N5991

    Abstract: 2N5987 2N5988 2N5989 225AB TO-225AB 2N5986 2N6988 transistor 2 Amp 3 volt 2sc 3138
    Text: • -X - MOTOROLA SC -CXSTRS/R F> = ” ^ x - ^ « ÎW ÎB PNP MOTOROLA 2N5986, 2N5987 2N5988 SEMICONDUCTOR TECHNICAL DATA « 1» 1 / NPN * 2N5989, 2N5991 « * 4 4 % 12 AMPERE HIGH POWER PLASTIC COMPLEMENTARY SILICON POWER TRANSISTORS POWER TRANSISTORS COMPLEMENTARY SILICON


    OCR Scan     		PDF 2N5986, 2N5989 2N5987 2N5988, 2N5991 2N5989 N5988, 2N5991 2N5987 2N5988 225AB TO-225AB 2N5986 2N6988 transistor 2 Amp 3 volt 2sc 3138

    H1 SOT-89 amplifier

    Abstract: bop 285 A3141ELL
    Text: SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both


    OCR Scan     		PDF

    2n6546 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 6547 ‘ Motorola Protend Dsvlco Designer’s Data Sheet Switchm ode Series NPN Silicon Power Transistors The 2N6547 transistor is designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and


    OCR Scan     		PDF 2N6547 2n6546 motorola

    transistor power mx 614

    Abstract: S81250PG S-8435 S-81250PG S81233PG sot693 cmos 4061 S-8430AF S80741AN SM740
    Text: SII Low Power CMOS ICs Seiko Instruments Dalactlaa V olUgt • Features *2.4% Ip A typ 1.5 to 5.1V* 5% typ 1 to 15V 0.75mA max CMOS 0.5 to 7mA Nch Ope ndrain • Output Forms: Nch Ope ndrain, CMOS L • 3 Package Types: TO-92, SOT-89-3 and SOT-23-5 >High Precision


    OCR Scan     		PDF S-807 OT-89-3 OT-23-5 S01-23-S S-80717AN S-80721AN S-80722AN S-80723AN S-60724AN S-80725AN transistor power mx 614 S81250PG S-8435 S-81250PG S81233PG sot693 cmos 4061 S-8430AF S80741AN SM740

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		PDF DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E

    k 3561 MOSFET

    Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
    Text: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­


    OCR Scan     		PDF DK101 O-22QAB k 3561 MOSFET TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20

    JE6043

    Abstract: JE6045 MJE6043 MJE6044 JE6044 MJE6045 mje6041 2N6041 je6041 2N6040
    Text: MO T OR OL A SC X S TR S/ R F 12E D | b3b7254 0G0MSfi4 b | 7 ^ B ^ / 2N6040 thru 2N6042 PNP 2N6043 Him 2N6045 NPN MJE6040 thru MJE6041 PNP MJE6043 thru MÌE6045 NPN MOTOROLA SEMICONDUCTOR TECHNICAL DATA PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS


    OCR Scan     		PDF b3b7254 2N6040 2N6042 2N6043 2N6045 MJE6040 MJE6041 MJE6043 E6045 2N6042, JE6043 JE6045 MJE6044 JE6044 MJE6045 2N6041 je6041

    MTD3055E

    Abstract: dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage
    Text: M O T O R O L A SC X S T R S / R F bflE ]> b3b72SM 00^0535 330 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTD3055E TMOS IV N-Channel Enhancement-Mode Motorola Preferred Device Power Field Effect Transistor DPAK for Surface or Insertion Mount


    OCR Scan     		PDF b3b72S4 MTD3055E MTD3055E dgtn 369A-10 AN569 MTD3055E1 diode zener 3144 voltage

    Untitled

    Abstract: No abstract text available
    Text: BiMOS II LATCHED DRIVERS The UCN5800A/L and UCN5801A/EP latched-input BiMOS ICs merge high-current, high-voltage outputs with CMOS logic. The CMOS input section consists of 4 or 8 data ‘D’ type latches with associated common CLEAR, STROBE, and OUTPUT ENABLE circuitry. The


    OCR Scan     		PDF UCN5800A/L UCN5801A/EP UCN5800A UCN5800L UCN5801A UCN5801EP UCN5800L UCN5800A

    an-9744

    Abstract: Transistor 3-347 AN9726 AN9718 Transistor 3-354
    Text: H A Semiconductor RM S S Signal Processing Communications 3 C o m m u n ic a tio n s P ro d u cts PAGE HI1177 8-Bit, 40MSPS, 2-Channel D/A Converter. 3-5 HI5628 8-Bit, 165/125/60MSPS, Dual High Speed CMOS D/A Converter.


    OCR Scan     		PDF HI1177 HI5628 HI5640 HI5660 HI5662 HI5667 HI5721 HI5728 HI5731 HI5741 an-9744 Transistor 3-347 AN9726 AN9718 Transistor 3-354

    LT 3142

    Abstract: Hall Sensor 13A 439 0-S04
    Text: SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION These Hall-eftect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both


    OCR Scan     		PDF MH-011-2A LT 3142 Hall Sensor 13A 439 0-S04