465B
Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
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MRF6S18140H
MRF6S18140HR3
MRF6S18140HSR3
MRF6S18140HR3
465B
A114
A115
AN1955
JESD22
MRF6S18140HSR3
Nippon capacitors
Nippon chemi
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SN74251
Abstract: sn74ls251n
Text: SN54251, SN54LS251 SN54S251, SN74251, SN74LS251, TIM9905 , SN74S251 DATA SELECTORS/MULTIPLEXERS WITH 3-STATE OUTPUTS SDLS085 – DECEMBER 1972 – REVISED MARCH 1988 Copyright 1988, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date.
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SN54251,
SN54LS251
SN54S251,
SN74251,
SN74LS251,
TIM9905)
SN74S251
SDLS085
SN74251
sn74ls251n
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PowerMOS Transistors
Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)
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OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
OT186
O-220
OT186A
O-220)
OT223
PowerMOS Transistors
075E05
MS-012AA
SO24
SSOP16
SSOP24
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Ericsson AB PGR 20312
Abstract: DFB ea InGaAs APD, 10 Gb/s, -30 dBm 20312 pgr optical supervisory channel 10 gb laser diode Ea 1530 A mini link ericsson Ericsson Power Modules stm-64 dfb
Text: Ericsson Microelectronics Optoelectronic Products Ericsson is a world-leading supplier in the fast growing and dynamic telecommunications and data communications industry; offering advanced solutions for mobile and fixed networks and terminals. Our products and solutions meet communications needs in the home and
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SE-164
Ericsson AB PGR 20312
DFB ea
InGaAs APD, 10 Gb/s, -30 dBm
20312 pgr
optical supervisory channel
10 gb laser diode
Ea 1530 A
mini link ericsson
Ericsson Power Modules
stm-64 dfb
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TL170C
Abstract: TL170 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect
Text: TL170C SIUCON HAU-EFFECT SWITCH 0 3 4 0 0 , D E C E M B E R 1877. R fV tS C O A P M L 1 0 M • Magnetfc-FWd Sensing Hall-Effect Input • On-Off Hysteresis • Small SI*« • Solid-State Technology • Open-Coiector Output description The T L17 0C is s low-cost magnetteal ly operated
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TL170C
TL170C
TL170
SS6012
L70C
tesla switch
Tesla sensor
ERO Electronic
irf540 TTL
tesla NZ 70
tl170 hall
tl170 hall effect
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23A18
Abstract: No abstract text available
Text: Low Saturation Voltage Switching Transistors E-pack SMD E-pack (Lead type) ITO-220 Bipolar transistors HSV series Bipolar transistors Absolute Maximum Ratings Type No. Electrical Characteristics VcEO VcBO VcEO V ebo Ic Ib Pt Tstg Tj [V] [V] [V ] [A ] [A ]
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ITO-220
23A1876
SC4978
ITO-220
23A18
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SM 4151
Abstract: 2sc497
Text: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo
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ITO-220
2SA1795
2SC4668
P1880
2SC4978
Fig78-3
SM 4151
2sc497
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Untitled
Abstract: No abstract text available
Text: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)
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ITO-220
2SA1795
Fig79-3
2SA1876
2SC4978
ITO-220
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Untitled
Abstract: No abstract text available
Text: Surface-Mount Devices Power Transistors E-pack Bipolar transistors Absolute Maximum Ratings Type No. Electrica Characteristics VcBO VCEO V ebo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] fC ] [ t ] -5 -7 -1 .5 2SA1795 1796 - 4 0 1876 -8 0 1877 2SC4668 40
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2SA1795
2SC4668
STO-220
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2sa1876
Abstract: No abstract text available
Text: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]
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2SA1795
2SC4668
2SA1876
2SC4978
Fig79-3
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2SC466
Abstract: No abstract text available
Text: P o w e r T r a n s is to r s E-pack Bipolar transistors Type No. E fA J Absolute Maximum Ratings Electrical Characteristics VCEO V e bo Ic Ib Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c] C-c] [V ] No. 2SA179S 1790 1876 1877 2SC466& 1 4666 4878 4876 —5
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2SA179S
2SC466&
2SK1861
2SK248Q
STO-220
2SC466
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cl 740
Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
Text: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES
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PH1600-6
Sb4250S
00DDS71
1600MHZ
21-Z12
470pF
015uF
cl 740
tss405
PO65
7w RF POWER TRANSISTOR NPN
PH1600
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e-pack
Abstract: 2SK1861 2SK1195 F05B23VR
Text: Bipolar transistors Absolute Maximum Ratings Type No. lliliM S lii» I ä ä S ä 1876 È èÊ ë ÊÊÈîM iÎ ilïlilÈ V cbo VCEO V ebo Ic Ib Pt Tstg Ti sus (min) [V ] [V ] [V ] [A ] [A ] [W ] C-c] [°G ] [V ] -6 0 iÎ ï — 5 -4 0 L -8 0 60 7 40 7 100
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STO-220
D005172
e-pack
2SK1861
2SK1195
F05B23VR
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smd transistor P2D
Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE
Text: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.
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PMBTA92
PMBTA93
smd transistor P2D
p2d smd
smd code p2d
smd transistor marking PA
MARKING CODE SMD IC
smd P2D
PMBTA93
P2d MARKING CODE
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TO-92variant
Abstract: No abstract text available
Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)
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OT54variant
O-92variant)
O-220AB)
OT96-1
OT137-1
T0-220
OT186A
O-220)
OT223
OT226
TO-92variant
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SGSP256
Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154
Text: S G S-THOMSON D7E D | ÏTSTSB? 0017630 b | / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field
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SGSP154
SGSP254/255/258
SGSP354/355/356
50V/400V
SGSP254
SGSP354
OT-82
O-220
SGSP155
SGSP256
SGSP356
SP156
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2SC1871
Abstract: n 1895 1878 TRANSISTOR 2SA893
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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frc-25
2SC1871
n 1895
1878 TRANSISTOR
2SA893
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2N6901 JANTX
Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements
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2N6901
2N6901
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6901 JANTX
2N6901 JANTXV
2N6901 JANTX harris
2n6898
transistor h44
2N6897 JANTXV
2N6897
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H0A1877
Abstract: No abstract text available
Text: H 0A 1877 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide operating temperature range -55“C to +100”C • 0.50 in.(12.7 mm) high optical axis position • 0.375 in.(9.52 mm) slot width DESCRIPTION The HOA1877 series consists of an infrared emitting
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HOA1877
HOA1877-001,
HOA1877-003)
SE1450,
SD1440,
SD1410
HOA1877
H0A1877
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H0A1877
Abstract: HOA1877-003 LC60
Text: H 0A 1877 Transmissive Sensor FEATURES • Choice of phototransistor or photodarlington output • Wide operating temperature range -55°C to +100°C • 0.50 in.(12.7 mm) high optical axis position • 0.375 in. (9.52 mm) slot width INFRA-47.TIF DESCRIPTION
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H0A1877
HOA1877
HOA1877-001,
HOA1877-003)
SE1450,
SD1440,
SD1410.
0D22bflT
HOA1877-003
LC60
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Untitled
Abstract: No abstract text available
Text: {Sì H A R R IS CDP1877 S E M I C O N D U C T O R Q 7 7 ^ ^ Programmable Interrupt Controller PIC February 1992 Features Description • Compatible with CDP1800 Series The CDP1877 and CDP1877C are programmable 8-level interrupt control lers designed for use in CDP1800 series microprocessor systems. They
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CDP1877
CDP1800
CDP1877
CDP1877C
P1877
CDP1877.
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BPSK MODULATORS raised cosine
Abstract: Minimum shift keying modulator "AN-899"
Text: AN-899 Operating and Evaluating Quadrature Modulators for Personal Communication Systems National Semiconductor Application Note 899 Wireless Communications ABSTRACT In comparison, for a quadrature modulator information is modulated onto a carrier with full freedom to manipulate the
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AN-899
DCS1800)
PCS-1900)
AN-884,
BPSK MODULATORS raised cosine
Minimum shift keying modulator
"AN-899"
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Untitled
Abstract: No abstract text available
Text: C M O S LSI ISA\YO LC33864P-80, M-70/80/10 512 K 65536 w ords x 8 bits P seudo-S R A M Overview The LC33864 series is composed of pseudo static RAM that operate on a single 5 V power supply and is organized as 65536 words x 8 bits. By using memory cells each
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EN4701A
LC33864P-80,
M-70/80/10
LC33864
32-pin
0017bflÂ
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c4460
Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895
Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4
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1503/C
1565/C
1574/C
1590/C
1616/C
1654/C
C3820,
1782/C
B1235/D
C3151
c4460
d1651
d1047
k d1047
B817
C2621
D1650
B1269
c4106
D895
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