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    D 13007 K TRANSISTOR Search Results

    D 13007 K TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 13007 K TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E 13007

    Abstract: E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2002.08.14 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200207 HMJE13007 O-220 E 13007 E13007 mj 13007 transistor MJ 13007 sec 13007 transistor E 13007 transistor E 13007-c transistor m 13007 transistor d 13007 13007 applications

    sec 13007

    Abstract: E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207
    Text: HI-SINCERITY Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2007.03.06 Page No. : 1/5 MICROELECTRONICS CORP. HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200207 HMJE13007 O-220 10sec sec 13007 E 13007 sec E 13007 SEC E 13007 - 2 e13007 mj 13007 transistor MJ 13007 transistor E 13007-c j 13007 HE200207

    E 13007

    Abstract: transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE200207 Issued Date : 1993.04.12 Revised Date : 2003.07.21 Page No. : 1/4 HMJE13007 NPN EPITAXIAL PLANAR TRANSISTOR Description • High Voltage, High Speed Power Switch • Switch Regulators • PWM Inverters and Motor Controls


    Original     		PDF HE200207 HMJE13007 O-220 E 13007 transistor MJ 13007 E13007 mj 13007 sec 13007 transistor E 13007-c sec E 13007 D 13007 K transistor transistor E 13007 transistor d 13007

    transistor d 13007

    Abstract: 14723 temic
    Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-O matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due


    Original     		PDF U7004B U7004B D-74025 19-Jan-00 transistor d 13007 14723 temic

    14723 temic

    Abstract: No abstract text available
    Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-W matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due


    Original     		PDF U7004B U7004B D-74025 19-May-99 14723 temic

    Untitled

    Abstract: No abstract text available
    Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-Ω matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due


    Original     		PDF U7004B U7004B D-74025 19-Jan-00

    transistor d 13007

    Abstract: D 13007 K transistor SSO20 U7004B U7004B-MFS U7004B-MFSG3 DECT telephone schematic W 13007 TRANSISTOR
    Text: U7004B DECT SiGe Front End IC Description The U7004B is a monolithic SiGe transmit/receive front end IC with power amplifier, internally 50-Ω matched, low-noise amplifier and T/R switch driver. It is especially designed for operation in TDMA systems like DECT. Due


    Original     		PDF U7004B U7004B D-74025 06-Sep-00 transistor d 13007 D 13007 K transistor SSO20 U7004B-MFS U7004B-MFSG3 DECT telephone schematic W 13007 TRANSISTOR

    MFC1010

    Abstract: No abstract text available
    Text: U4311B-FS Low-Current Superhet Remote-Control Receiver Description The U4311B-FS is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super-heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car


    Original     		PDF U4311B-FS U4311B-FS D-74025 24-May-00 MFC1010

    remote control rc car circuit diagram

    Abstract: U4311B-FS D 13007 K transistor monoflop 18-pin fm demodulator real fm transmitter circuit diagram RC912 SAW 13007 U4311BFS
    Text: U4311B-FS Low-Current Superhet Remote Control Receiver Description The U4311B-FS is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super-heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car


    Original     		PDF U4311B-FS U4311B-FS D-74025 28-Sep-00 remote control rc car circuit diagram D 13007 K transistor monoflop 18-pin fm demodulator real fm transmitter circuit diagram RC912 SAW 13007 U4311BFS

    detail of D 13007 K

    Abstract: fm receiver toko SAW 13007 amplifier circuit diagram circuit for monoflop remote control car circuit diagram S822T SSO20 U4311B U4311B-CFS
    Text: U4311B-FS Low-Current Superhet Remote-Control Receiver Description The U4311B is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super-heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car


    Original     		PDF U4311B-FS U4311B D-74025 22-Sep-98 detail of D 13007 K fm receiver toko SAW 13007 amplifier circuit diagram circuit for monoflop remote control car circuit diagram S822T SSO20 U4311B-CFS

    18-pin fm demodulator

    Abstract: U4311B-C ANT012 ANT013 ANT015 S822T S852T SSO20 U4311B U4311B-FS
    Text: U4311B-FS Low-Current Superhet Remote-Control Receiver Description The U4311B is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super-heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car


    Original     		PDF U4311B-FS U4311B D-74025 01-Oct-96 18-pin fm demodulator U4311B-C ANT012 ANT013 ANT015 S822T S852T SSO20 U4311B-FS

    LOW khz receiver 77,5kHz

    Abstract: time code receiver 60khz msf SL 100 NPN Transistor dcf ferrite antenna dcf77 receiver dcf77 transistor E 13007 dcf CLOCK E 13007 equivalent of SL 100 NPN Transistor
    Text: U4226B Time-Code Receiver with TC Output Description The U4226B is a bipolar integrated straight-through receiver circuit in the frequency range of 40 to 80 kHz. The device is designed for radio-controlled clock applications. Features D D D D Very low power consumption


    Original     		PDF U4226B U4226B D-74025 16-Jan-98 LOW khz receiver 77,5kHz time code receiver 60khz msf SL 100 NPN Transistor dcf ferrite antenna dcf77 receiver dcf77 transistor E 13007 dcf CLOCK E 13007 equivalent of SL 100 NPN Transistor

    SE 13007

    Abstract: D 13007 K 13007 T 13007 E 13007 p 13007 j 13007 D 13007 13007t E 13007 0
    Text: A E G CORP 1?E D 0 Q S cm5t> QQQ' l bMB 3 • TE 13006 TE 13007 TTEÜ1-? 5E3£SI> j e le c tro n ic Oeat* T«hnotog«s r - 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF

    EB 13007

    Abstract: E 13007 transistor E 13007 T 13007 D 13007 K 13007 TRANSISTOR transistor 13007 e13007 13007 en 13007
    Text: KSE13006/13007 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH MODE APPLICATION • High Speed Switching • Suitable for Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : KSE13Q06 : KSE13007 Collector Emitter Voltage : KSE13006


    OCR Scan     		PDF KSE13006/13007 KSE13Q06 KSE13007 KSE13006 EB 13007 E 13007 transistor E 13007 T 13007 D 13007 K 13007 TRANSISTOR transistor 13007 e13007 13007 en 13007

    transistor 13007

    Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T- 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique


    OCR Scan     		PDF 15A3DIN transistor 13007 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR

    CI 13007

    Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
    Text: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA


    OCR Scan     		PDF ST24C02 TS59C11 TS93C46 M9306 M9346 CI 13007 bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471

    MJE13007

    Abstract: MJE-13007 13006 TRANSISTOR mje13007 TRANSISTOR MJE13006 transistor 13006 MJE13007Q
    Text: [ [ ^^53131 Q Q n i 3 1 D EV ELO P M EN T DATA a MJE13006 MJE13007 T his data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T-33-I3 SILICO N DIFFUSED POWER TRAN SISTO R High-voltage, high-speed glass-passivated npn power transistor in a T 0 -2 2 0 envelope, intended for use


    OCR Scan     		PDF bfa53Â MJE13006 MJE13007 r-33-13 T0-220 bbS3T31 T-33-13 MJE13007 MJE-13007 13006 TRANSISTOR mje13007 TRANSISTOR transistor 13006 MJE13007Q

    IRF 850

    Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
    Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400


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    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


    OCR Scan     		PDF

    BD53A

    Abstract: KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment “i Package Application FM AM D iff. Amp RM AM P M ix Conv Local Ose IF SOT-23 KSC2223 KSC2223 KSC2223 KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715 10W 20W KSA812/KSC1623


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1623 KSC2715 KSC1674 BD53A KSA733 KSC1330 KSC945 BD139 BD433 TO92 KSE 13007 L ss8050 sot-23 KSE13009F KSP10

    PHE13007

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTION The PH E 13007 is a silicon npn pow er sw itching tra n sisto r in the T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control system s,


    OCR Scan     		PDF PHE13007 PHE13007

    ksd 250v 10a

    Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
    Text: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715


    OCR Scan     		PDF OT-23 KSC2223 KSC2715 KSC1674 KSC1674/ KSC167Î KSC838/KSC167 ksd 250v 10a ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072

    SGSF465

    Abstract: SGSF445 sgsf444 SGSF323 mje13005-1 MJE-13007 SGSIF443 transistor 13005 M9306 SGSF424
    Text: {Z T SGS-THOMSON CONSUMER Ä 7 # MD K I[LiOT©liî!IDËi RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA


    OCR Scan     		PDF ST24C02 TS59C11 TS93C46 M9306 M9346 SGSF664 SGSF665 SGSF663 SGSF661 SGSF465 SGSF445 sgsf444 SGSF323 mje13005-1 MJE-13007 SGSIF443 transistor 13005 SGSF424

    E13007

    Abstract: E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 je13007 mj 13007 transistor E 13007
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE13007 M JF13007 Designer’s Data Sheet SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF13007 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V


    OCR Scan     		PDF JE13007 JF13007 MJE/MJF13007 T0-220 MJF13007 E13007 E 13007 F13007 F 13007 SEC E 13007 - 2 transistor MJ 13007 equivalent 13007 mj 13007 transistor E 13007