ADL-66302TL
Abstract: No abstract text available
Text: ADL-66302TL TECHNICAL DATA Red Laser Diode Features • • • • AlGaAlP laser diode Peak Wavelength: 658 nm Optical Ouput Power: 30 mW Package: 5.6 mm, with Photo Diode Electrical Connection Pin Configuration Bottom View m-type PIN 1 2 3 Function LD Cathode
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ADL-66302TL
ADL-66302TL
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Untitled
Abstract: No abstract text available
Text: ADL-66302TL AlGaInP Visible Laser Diode DATE：2008/06/06 Ver 1.0 o ★660nm 30mW 60 C Reliable High Power Operation • Features 1. Low operating current 2. High efficiency 3. High precision package 4. High power operation • Applications 1. Laser pointers
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ADL-66302TL
660nm
divers-vis/ari/655nm/
adl-66302tl
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RD43FF
Abstract: RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 4466A 4066A
Text: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage
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RD43FF
DS5414-1
DS5414-2
1500A
RD43FF06
RD43FF05
RD43FF04
RD43FF03
RD43FF02
RD43FF
RD43FF01
RD43FF02
RD43FF03
RD43FF04
RD43FF05
RD43FF06
4466A
4066A
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Untitled
Abstract: No abstract text available
Text: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage
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RD43FF
DS5414-1
DS5414-2
1500A
RD43FF06
RD43FF05
RD43FF04
RD43FF03
RD43FF02
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RD43FF
Abstract: RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 3 phase rectifier diode 51500a
Text: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage
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RD43FF
DS5414-1
DS5414-2
1500A
RD43FF06
RD43FF05
RD43FF04
RD43FF03
RD43FF02
RD43FF
RD43FF01
RD43FF02
RD43FF03
RD43FF04
RD43FF05
RD43FF06
3 phase rectifier diode
51500a
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AN4839
Abstract: RD43FF RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 4466A 4066A
Text: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage
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RD43FF
DS5414-1
DS5414-2
1500A
RD43FF06
RD43FF05
RD43FF04
RD43FF03
RD43FF02
AN4839
RD43FF
RD43FF01
RD43FF02
RD43FF03
RD43FF04
RD43FF05
RD43FF06
4466A
4066A
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4513 BCD to Seven Segment display
Abstract: servo SG 5010 bu 5027 15367 JW-100SA diagram 7 segm led 6610 7 segment display 6011 tad 15620 13700 COUNTER LED bcd
Text: Version 1.0 Produced in February, 2004 Sharp Programmable Controller NEW Satellite JW50H/70H/100H Model name JW-12PS For four axes : JW-14PS For two axes : Pulse output module , User s Manual JW-12 PS JW-14 PS Thank you for buying the pulse output module JW-12PS/14PS for the Sharp Programmable Controller JW50H/
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JW50H/70H/100H
JW-12PS
JW-14PS
JW-12
JW-14
JW-12PS/14PS)
JW50H/
70H/100H.
JW-12PS/14PS.
JW-12PS/14PS,
4513 BCD to Seven Segment display
servo SG 5010
bu 5027
15367
JW-100SA diagram
7 segm led 6610
7 segment display 6011
tad 15620
13700
COUNTER LED bcd
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H-37-2
Abstract: H-38-2
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lower profile than Model 6639 Essentially infinite resolution Excellent rotational life High quality, rugged construction Recommended for HMI applications Cost and space saving ■ ■ Optional anti-rotation lug
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H-37-2
Abstract: H-38-2
Text: *R oH S CO M PL IA NT Features • Lower profile than Model 6639 ■ Optional anti-rotation lug ■ Essentially infinite resolution ■ Optional mechanical stop ■ Excellent rotational life ■ High quality, rugged construction ■ Recommended for HMI applications
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CW 6630
Abstract: H-37-2 H-38-2
Text: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lower profile than Model 6639 Essentially infinite resolution Excellent rotational life High quality, rugged construction Recommended for HMI applications Cost and space saving ■ ■ Optional anti-rotation lug
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Untitled
Abstract: No abstract text available
Text: *R oH S CO M PL IA NT Features • Lower profile than Model 6639 ■ Optional anti-rotation lug ■ Essentially infinite resolution ■ Optional mechanical stop ■ Excellent rotational life ■ High quality, rugged construction ■ Recommended for HMI applications
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1Mx8 bit Low Power CMOS Static RAM
Abstract: AN 7470 cmos static ram 1mx8 5v EDI8F81026C EDI8F81026C20M6C EDI8F81026C25M6C EDI8F81026C25M6I EDI8F81026C35M6C
Text: EDI8F81026C 1Megx8 SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout Features 1 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging
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EDI8F81026C
EDI8F81026C
512Kx8
EDI8F81026C25M6C
EDI8F81026C25M6I.
01581USA
1Mx8 bit Low Power CMOS Static RAM
AN 7470
cmos static ram 1mx8 5v
EDI8F81026C20M6C
EDI8F81026C25M6I
EDI8F81026C35M6C
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EDI8F82045C
Abstract: EDI8F82045C100B6C EDI8F82045C70B6C EDI8F82045C85B6C
Text: EDI8F82045C 2Megx8 SRAM Module Features 2 Megabits x 8 Static RAM CMOS, Module 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F82045LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks
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EDI8F82045C
100ns
EDI8F82045LP
EDI8F82045C
512Kx8
EDI8F82045LP)
EDI8F82045C70B6C
EDI8F82045C70B6I.
01581USA
EDI8F82045C100B6C
EDI8F82045C85B6C
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7470 TTL
Abstract: 7470 pin diagram V 7470 EDI8F82046C20M6C EDI8F82046C25M6C EDI8F82046C25M6I EDI8F82046C35M6C AN 7470
Text: EDI8F82046C 2 Megx8 SRAM Module Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging • JEDEC Approved, Revolutionary Pinout • 36 Pin DIP, No. 178
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EDI8F82046C
EDI8F82046C
512Kx8
EDI8F82046C25M6C
EDI8F82046C25M6I.
01581USA
7470 TTL
7470 pin diagram
V 7470
EDI8F82046C20M6C
EDI8F82046C25M6I
EDI8F82046C35M6C
AN 7470
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trc 9500
Abstract: EDI8F8513B20M6C EDI8F8513B25M6C EDI8F8513B35M6C EDI8F8513C
Text: EDI8F8513C 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static
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EDI8F8513C
512Kx8
EDI8F8513C
4096K
128Kx8
the128Kx8
EDI8F8513B20M6C
trc 9500
EDI8F8513B20M6C
EDI8F8513B25M6C
EDI8F8513B35M6C
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EDI8F81025C100B6C
Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
Text: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is
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EDI8F81025C
EDI8F81025C
512Kx8
EDI8F81025LP)
100ns
EDI8F81025LP
EDI8F81025C70B6C
EDI8F81025C70B6I.
01581USA
EDI8F81025C100B6C
EDI8F81025C85B6C
EDI8F81025LP70B6C
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Untitled
Abstract: No abstract text available
Text: EDI9F416512C 4x512Kx16 SRAM Module 4x512Kx16 Static RAM CMOS, Module Features 4x512Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks
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EDI9F416512C
4x512Kx16
100ns
EDI9F416512LP
EDI9F416512C70BNC
EDI9F416512C70BNI.
01581USA
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wiring diagram audio amplifier ic 6283
Abstract: cd 6283 ic wiring diagram RCR42G 520-587900O-00C311 CM06FD Cherokee International Power sp215 rockwell collins 634 EIMAC Application Bulletin rcr20g TB101
Text: Collins instruction book Collins Government Telecommunications Group 30S-1 RF Linear Amplifier 520-587900O-00C311 12th Edition, 15 March 1976 * Rockwell International Collins instruction book 30S-1 RF Linear Amplifier Collins Government Telecommunications Group
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30S-1
520-587900O-00C311
30S-1
TB211
wiring diagram audio amplifier ic 6283
cd 6283 ic wiring diagram
RCR42G
CM06FD
Cherokee International Power sp215
rockwell collins 634
EIMAC Application Bulletin
rcr20g
TB101
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Untitled
Abstract: No abstract text available
Text: T O S H IB A URSF05G49-1 P#URSF05G49-3P#URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P Unit in mm LOW POWER SWITCHING AND CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage VDRM Repetitive Peak Reverse Voltage V r r m y =400V
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URSF05G49-1
URSF05G49-3P#
URSF05G49-5P
URSF05G49-1P,
URSF05G49-3P,
--500mA
URSF05G49-3P
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Untitled
Abstract: No abstract text available
Text: T O S H IB A URSF05G49-1 P#URSF05G49-3P#URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P Unit in mm LOW POWER SWITCHING AND CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage VDRM Repetitive Peak Reverse Voltage V r r m y =400V
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URSF05G49-1
URSF05G49-3P#
URSF05G49-5P
URSF05G49-1P,
URSF05G49-3P,
--500mA
URSF05G49-3P
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Untitled
Abstract: No abstract text available
Text: _EDI8F81026C ^EDI Electronic Designs Inc. Commercial Eight Megabit SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout The EDI8F81026C is an 8 Megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.
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EDI8F81026C
EDI8F81026C
512Kx8
323D114
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Untitled
Abstract: No abstract text available
Text: EDI8F81026C m lUegxS SRAM Module ELECIROMC DC9SN&NC. 1Megabitx 8 StaticRAM CMOS, Module with RevolutionaryPinout F e a tu re s 1 Meg x 8 bit CM OS Static The EDI8F81026C is an 8 Megabit CM OS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered
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EDI8F81026C
EDI8F81026C
512Kx8
EDI8F81035M6C
EDI8F81026C25M6C
EEM8F81026C2SM6I.
36PinDuaHhtne
4WECOf74TO
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EDI8C8512C35TM
Abstract: EDI8C8512C45TM EDI8C8512C55TM
Text: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi layered, multi-cavity ceramic substrate. This high speed
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22EDI
EDI8C8512C
512Kx8
EDI8C8512C
4096K
128Kx8
323D11M
EDI8C8512C35TM
EDI8C8512C45TM
EDI8C8512C55TM
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trc 9500
Abstract: No abstract text available
Text: EDI8F8513C m o I, ELÉC1R0MC DE9CNS. H C 512KxSStatic Ram 512Kx8StaticRAM CMOS, Module F e a tu r e s The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static
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EDI8F8513C
512KxSStatic
512Kx8StaticRAM
512Kx8
EDI8F8513C
4096K
128Kx8
the128Kx8
EDI8F8513B25M6C
EDI8F8513B35M6C
trc 9500
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