V75 marking
Abstract: smd v75 SMD MARKING CODE V75 marking code V75 y8s smd code CGY 63 smd code Y8s
Text: GaAs MMIC CGY 63 Preliminary Data Sheet • Broadband Driver Amplifier 800 … 2500 MHz • Bluetooth, ISM450, ISM900, ISM2400 • Base Station Driver Amplifier • Single Voltage Supply: 2.7 to 6 V • POUT = 20.0 dBm at VD = 3.2 V (CW) • POUT = 22.0 dBm at VD = 5.0 V (CW)
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ISM450,
ISM900,
ISM2400
Q62702-G0115
SCT-595
GPW05997
V75 marking
smd v75
SMD MARKING CODE V75
marking code V75
y8s smd code
CGY 63
smd code Y8s
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EE20
Abstract: EE20 core PIC12C50X D363 EC20 PIC12C508 PIC12C509 PIC12C5XX
Text: PIC12C5XX EPROM Memory Programming Specification Pin Diagram This document includes the programming specifications for the following devices: PDIP, SOIC, CW 1.0 PROGRAMMING THE PIC12C5XX VDD 1 GP5/OSC1/CLKIN 2 GP4/OSC2/CLKOUT 3 GP3/MCLR/Vpp 4 PIC12C5XX • PIC12C508
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PIC12C5XX
PIC12C508
PIC12C509
PIC12C5XX
DS30557B
EE20
EE20 core
PIC12C50X
D363
EC20
PIC12C508
PIC12C509
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transistor f 948
Abstract: transistor 936 j78 transistor J31 transistor GP 948 UF28150J UF2815OJ DS-175 pd233
Text: UF28150J PRELIMINARY POWER MOSFET TRANSISTOR 150 WATTS, 100 - 500 MHz, 28 V OUTLINE DRAWING FEATURES • N-Channel Enhancement Mode Device • Applications • 150 Watts CW • Common Source Gemini Configuration • RESFET Structure • Internal Input Impedance Matching
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UF28150J
transistor f 948
transistor 936
j78 transistor
J31 transistor
GP 948
UF2815OJ
DS-175
pd233
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NX8570SD
Abstract: 409d 766d ETALON 362d TLD 521 315D 346D 377D 967D
Text: LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
NX8570SD
409d
766d
ETALON
362d
TLD 521
315D
346D
377D
967D
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NX8562-AZ
Abstract: NX8562LB NX8562LF 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE NX8562 FOR DWDM APPLICATIONS SERIES 20 mW MIN FEATURES DESCRIPTION • AVAILABLE FOR DWDM WAVELENGTHS BASED ON ITU-T RECOMMENDATIONS (100 GHz grid) refer to the Ordering Information • OUTPUT POWER: Pf = 20 mW MIN
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NX8562
NX8562
NX8562-AZ
NX8562LB
NX8562LF
160832
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1583 Series
Abstract: 362d 766d
Text: LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
1583 Series
362d
766d
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ingaasp
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8562LF
NX8562LF
ingaasp
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NX8563
Abstract: NX8563-AZ NX8563LB NX8563LF laser diode 1550 nm 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
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NX8563
NX8563
14-PIN
NX8563-AZ
NX8563LB
NX8563LF
laser diode 1550 nm
160832
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NEC JAPAN 567
Abstract: NX8563LF PX10160E
Text: DATA SHEET LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563LF
NX8563LF
NEC JAPAN 567
PX10160E
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SPD014A
Abstract: No abstract text available
Text: SAW Duplexer 836.5/881.5MHz China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: SPD014A www.sipatsaw.com A. MAXIMUM RATING: RoHS Compliant Lead free Lead-free soldering 1.Input Power Level: 1.2W>50000 Hours, CW tone Ta=50°C
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SPD014A
849MHz
SPD014A
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601 Opto isolator
Abstract: NX8563LF PX10160E
Text: LASER DIODE NX8563LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8563LF
NX8563LF
601 Opto isolator
PX10160E
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NX8563 Series
Abstract: thermistor 517 NX8563 NX8563LB NX8563LF 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATIONS 10 mW MIN NX8563 SERIES FEATURES DESCRIPTION • OUTPUT POWER: Pf = 10 mW MIN NEC's NX8563 Series are a 1550 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode
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NX8563
NX8563
14-PIN
NX8563 Series
thermistor 517
NX8563LB
NX8563LF
160832
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601 Opto isolator
Abstract: NX8562LF PX10160E
Text: LASER DIODE NX8562LF 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562LF is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain Fiber (PMF).
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NX8562LF
NX8562LF
601 Opto isolator
PX10160E
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nec nx8562
Abstract: NX8562LB NX8562LF 160832
Text: NEC's CW InGaAsP MQW DFB LASER DIODE MODULE NX8562 FOR DWDM APPLICATIONS SERIES 20 mW MIN FEATURES DESCRIPTION • AVAILABLE FOR DWDM WAVELENGTHS BASED ON ITU-T RECOMMENDATIONS (100 GHz grid) refer to the Ordering Information • OUTPUT POWER: Pf = 20 mW MIN
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NX8562
NX8562
nec nx8562
NX8562LB
NX8562LF
160832
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537D
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX8571 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8571 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8571
537D
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continuous wave light source for dwdm system
Abstract: NX8300BE-CC NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8563 NX8563LB NX8563LF 10 gb laser diode
Text: DATA SHEET LASER DIODE NX8563 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8563 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization Maintain
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NX8563
continuous wave light source for dwdm system
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8563LB
NX8563LF
10 gb laser diode
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NX8300BE-CC
Abstract: NX8300CE-CC NX8303BG-CC NX8303CG-CC NX8304BE-CC NX8562LB NX8562LF 10 gb laser diode NEC 6109 SERIES continuous wave light source for dwdm system
Text: DATA SHEET LASER DIODE NX8562 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE MODULE CW LIGHT SOURCE FOR DWDM APPLICATIONS DESCRIPTION The NX8562 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with Polarization
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NX8562
NX8300BE-CC
NX8300CE-CC
NX8303BG-CC
NX8303CG-CC
NX8304BE-CC
NX8562LB
NX8562LF
10 gb laser diode
NEC 6109 SERIES
continuous wave light source for dwdm system
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362d
Abstract: 601 Opto isolator 766d transistor NEC D 587 315D 346D 377D 409D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
601 Opto isolator
766d
transistor NEC D 587
315D
346D
377D
409D
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Untitled
Abstract: No abstract text available
Text: P/N 250-30-100-35-E3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 30 - 250 MHz 100 Watts Gain: 35 dB Voltage: 28 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum Frequency Range 30 - 250 MHz
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250-30-100-35-E3
11Amp
250-30-100-35-E3
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362d
Abstract: 315D 346D 377D NX8570SA b 803 a NX8570SD 933D 618D
Text: DATA SHEET LASER DIODE NX8570 Series 1 550 nm CW LIGHT SOURCE InGaAsP MQW-DFB LASER DIODE MODULE WITH WAVELENGTH MONITOR DESCRIPTION The NX8570 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode module with wavelength
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NX8570
362d
315D
346D
377D
NX8570SA
b 803 a
NX8570SD
933D
618D
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Untitled
Abstract: No abstract text available
Text: CWR06 SST S0LID TANTALUM: Chip PRODUCT FEA TU R ES • • • • • Established Reliability Military Product Terminations Available from 4 to 50 VDC 0.1 to 10OpF Tape and Reel Option CW R06 Characteristics: Tansitor’s CW R06 capacitors are qualified to the latest version
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10OpF
requiremR06N
CWR06N
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SDL2361H1
Abstract: SDL-2300 SDL-2352-H1 SDL-2382-P1 SDL-2360 SDL-23-10-P1 6NA8 sdl-2380 SDL-2371-H SDL laser diode manual
Text: • UP TO 4.0 WATT CW HIGH BRIGHTNESS GaAIAs LASER DIODES Key Features 4, 3, 2, 1.2, 0.5 W cw Power 500, 370, 200, 100 and 50 pm Apertures High Efficiency MOCVD Quantum Well Design Internal TEC Option For Wavelength Control High Reliability Open Heat Sink, Window, and Fiber Packages
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SDL-2300
SDL-2340,
SDL2361H1
SDL-2352-H1
SDL-2382-P1
SDL-2360
SDL-23-10-P1
6NA8
sdl-2380
SDL-2371-H
SDL laser diode manual
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epsilam
Abstract: PZ1418B15U PZ1721B12U PZ2024B10U
Text: JI _ - PHILIPS PZ1418B15U PZ1721B12U PZ2024B10U SbE J> INTERNATIONAL • 7110flEb OOMbMbfl E55 ■ P H I N MICROWAVE POWER TRANSISTORS FOR BROADBAND AMPLIFIERS T ^ ^ 3 -O S NPN transistors for use in common-base, class-B, wideband amplifiers under CW conditions in military
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PZ1418B15U
PZ1721B12U
PZ2024B10U
711002b
PZ1418B30U/PZ1721B25U/PZ2024B20U
T-33-09
epsilam
PZ2024B10U
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Untitled
Abstract: No abstract text available
Text: MI DRG. NO. TF500BB15-040C REV. TF500BB15-040 .220 MAX. 1.250 HIGH POWER BeO TERMINATION SPECIFICATIONS .875 .167 .625 IFILE: TERMOUT POWER MAX WATTS : 500 CW RESISTANCE 50 OHMS (±5%) .060 C A U TIO N THIS SUBSTRATE USES BERYLLIUM OXIDE USE CARE WHEN HANDLING.
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TF500BB15-040C
TF500BB15-040
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