F J1 3007-2
Abstract: J1 3007-2 I3007 SI30072
Text: LOWER RDV ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P 1 - P 2 - P 3 (P 4 - P 5 - P 6 ) : (J 1 - J 2 ) : (J 3 - J 6 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )
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100KH
CT720183
SI-30072
F J1 3007-2
J1 3007-2
I3007
SI30072
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J1 3009-2
Abstract: DC/J1 3009-2 0/J1 3009-2
Text: LDWER ROW 1000PF, 2KV ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID P1-P2-P3 i (J1-J2) (P 4 -P 5 -P 6 ) i CJ3-J6) 2.0 INDUCTANCE CP6-P5) (P2-P1) 3.0 LEAKAGE INDUCTANCE P6-P5 (WITH J6 AND J3 SHORT) P2-P1 (WITH J2 AND J1 SHORT) 4.0 INTERVINDING CAPACITANCE <P6,P5,P4) TO <J6,J3)
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1000PF,
350uH
CT720183
J1 3009-2
DC/J1 3009-2
0/J1 3009-2
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21-33011
Abstract: No abstract text available
Text: L O WE R ROW EL E C T R IC A L SP E C IF IC A T IO N S: 1.0 TURNS RATIO: P 1 - P 2 - P 3 : ( J 1 - J 2 ) (P 4 - P 2 - P 6 ) : (J 3 -J 6 ) 2 .0 IN D U CT AN CE: 3 .0 L EA K A G E IN D U CT AN CE: 4 .0 INTERW INDIN G C AP AC ITAN C E: 5 .0 D C R E S IS T A N C E : ( J 6 - J 3 ) = ( J 1 - J 2 )
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1000pF,
350uH
CT720183
21-33011
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Untitled
Abstract: No abstract text available
Text: L D V E R ROW ELECTRICAL SPECIFICATIONS* 1.0 TURNS RATID P1-P2-P3 i (J1 -J2 ) (P 4 -P 2 -P 6 ) i ( J 3 - J 6 ) 2.0 INDUCTANCE (P 6-P 4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 (WITH J6 AND J3 SHDRT) P3-P1 (WITH J2 AND J1 SHDRT) 4.0 INTERWINDING CAPACITANCE <P6,P2,P4) TD <J6 ,J3 )
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350uH
CT720183
SI-30099
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Untitled
Abstract: No abstract text available
Text: LDWER R D V q- T” - k pi? rmv(Pp- ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE <P6-J6> (P l-J l) 2.0 DC RESISTANCE P6-J6j P3-J3j P2-J2j P I- J1 3.0 COMMON MDDEi FREQUENCYCMHz) TYPICAL(-dB) i 8 5 17 20 23 70 25
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CT720183
SI-30090
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j1 3003
Abstract: si3005
Text: LDWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 2 - P 3 - P 1 : (J2- J1) (P 6 - P 5 - P 4 ) : (J6- J3) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: (J6 - J3 ) ; (J2- J1) (P 6 - P 4 ) (P 3 - P 1 ) (J6 - J3 )
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350uH
100KHz,
CT720183
SI-30056
j1 3003
si3005
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Untitled
Abstract: No abstract text available
Text: LDWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATID P1-P2-P3 i (J1 -J2 ) (P 4 -P 5 -P 6 ) i C J3 -J6 ) 2.0 INDUCTANCE CP6-P4) (P3-P1) 3.0 LEAKAGE INDUCTANCE P6-P4 (WITH J6 AND J3 SHORT) P3-P1 (WITH J2 AND J1 SHORT) 4.0 INTERVINDING CAPACITANCE <P6,P5,P4) TO <J6 ,J3 )
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350uH
CT720183
SI-30084
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Untitled
Abstract: No abstract text available
Text: LOWER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: OPERATING TEMPERATURE RANGE: 1.0 TURNS RATIO: P 1 - P 2 - P 3 : (J 1 - J 2 ) ( P 4 - P 5 - P 6 ) : (J 3 - J 6 ) 2 .0 INDUCTANCE: 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )
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1000PF,
100KH
CT720183
SI-30055
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Untitled
Abstract: No abstract text available
Text: LOWER ROW ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 - P 2 - P 3 : (J 1 - J 2 (P 4 - P 5 - P 6 : (J 3 - J 6 ) 2.0 INDUCTANCE: (P 6 - P 4 ) (P 3 - P 1 ) 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE: 5.0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )
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100KH
CT720183
SI-30150
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Untitled
Abstract: No abstract text available
Text: LDWER ROW 1000PF, 2KV ELECTRICAL SPECIFICATIONS: 1.0 TURNS RATIO: P 1 - P 2 - P 3 : (J 1 - J 2 (P 4 - P 2 - P 6 : (J 3 - J 6 ) 2 .0 INDUCTANCE: (P 6 - P 4 ) (P 3 - P 1 ) 3 .0 LEAKAGE INDUCTANCE: 4 .0 INTERWINDING CAPACITANCE: 5 .0 DC RESISTANCE: ( J 6 - J 3 ) = ( J 1 - J 2 )
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1000PF,
CT720183
SI-301
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922P
Abstract: No abstract text available
Text: SHIELDING: 16 PORTS 8 OVER 8 STACKED JACK "PG4-05” EMI-RFI 2 PIECE SHIELDED, ESD GROUNDED .050 [1.27] TYP TOL NON-ACCUM 0 .035 [.0.89] (8) -.100 [2.54] TYP TOL NON-ACCUM .083 [2.11] (9 ) TO HIGHEST POINT OF BEAM .243 [6 .1 7 ]— • -4 .2 5 0 [1 0 7 .9 5 ]- 3 .7 0 0 [9 3 .9 8 ]NOTES:
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PG4-05"
CT720183
I-30072
922P
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