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    CT60A Search Results

    CT60A Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    CT60AM-18F#F00 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
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    CT60A Price and Stock

    Hammond Manufacturing CT60A

    CURR SENSE XFMR 5A CHAS MNT
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    DigiKey CT60A Box 1
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    Mouser Electronics CT60A 5
    • 1 $63.01
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    Onlinecomponents.com CT60A
    • 1 $72.07
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    Powell Electronics CT60A 11 1
    • 1 $62.98
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    Master Electronics CT60A
    • 1 $72.07
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    JRH Electronics CT60A

    CURR SENSE XFMR 5A CHAS MNT
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    DigiKey CT60A Box 1
    • 1 $114.51
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    • 100 $97.9455
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    Bourns Inc CD214C-T60ALF

    TVS DIODE 60VWM 96.8VC SMC
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    Avnet Americas CD214C-T60ALF Reel 12,000
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    Bourns Inc CD214C-T6.0ALF

    TVS DIODE 6VWM 10.3VC SMC
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    Avnet Abacus CD214C-T6.0ALF 143 Weeks 3,000
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    Avnet Americas CD214C-T6.0ALF Reel 12,000
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    Rochester Electronics LLC CT60AM-18F-G02

    N-CHANNEL IGBT, 900V, 60A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CT60AM-18F-G02 Bulk 50
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    CT60A Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CT60A Hammond Manufacturing Current Sense Transformers, Transformers, TRANSFORMER TOROID 2VA 60:5 Original PDF
    CT60AM-18B Mitsubishi Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Original PDF
    CT60AM-18B Mitsubishi MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE Original PDF
    CT60AM-18B Renesas Technology IGBT Chip, N Channel, 900V, TO-3PL, 3-Pin Original PDF
    CT60AM-18B Mitsubishi IGBT - Resonant Inverter Use Scan PDF
    CT60AM-18C Renesas Technology IGBT Transistor, Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18C Renesas Technology RESONANT INVERTER USE Original PDF
    CT60AM-18C-AD Renesas Technology IGBT Transistor, Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18F Mitsubishi Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Original PDF
    CT60AM-18F Powerex INSULATED GATE BIPOLAR TRANSISTOR Original PDF
    CT60AM-18F Renesas Technology Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18F Renesas Technology Insulated Gate Bipolar Transistor Original PDF
    CT60AM-18F Mitsubishi IGBT for Microwave Oven, TO-3PL Scan PDF
    CT60AM-18F-AD Renesas Technology Insulated Gate Bipolar Transistor Original PDF
    CT60AM-20 Mitsubishi IGBT - Resonant Inverter Use Scan PDF

    CT60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ct60am

    Abstract: resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ 3.2 2.5 1 26 4 20.6MIN. 2 1 2 1 3 0.5 3 5.45 5.45 4.0 wr ¡VCES . 900V


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    PDF CT60AM-18B 20MAX. ct60am resonant inverter CT60AM-18B MITSUBISHI Microwave Transistors IGBT 900v 60a 8600V TRANSISTOR ct60am microwave inverter ic

    ct60am18b

    Abstract: BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE CT60AM-18B OUTLINE DRAWING Dimensions in mm φ 3.2 4 wr ¡VCES . 900V ¡IC . 60A


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    PDF CT60AM-18B ct60am18b BR 101 Transistor IGBT 900v 60a CT60AM-18B diode 18B Diode Transistor

    CT60AM-18F

    Abstract: IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A
    Text: CT60AM-18F Insulated Gate Bipolar Transistor REJ03G1374-0200 Previous: MEJ02G0023-0101 Rev.2.00 Jul 07, 2006 Features • VCES : 900 V • IC : 60 A • Integrated fast-recovery diode Appearance Figure RENESAS Package code: PRSS0004ZC-A (Package name: TO-3PL)


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    PDF CT60AM-18F REJ03G1374-0200 MEJ02G0023-0101) PRSS0004ZC-A CT60AM-18F IGBT tail time CT60AM-18F-AD MICROWAVE SEMICONDUCTORS CORP PRSS0004ZC-A

    CT60AM-18F

    Abstract: CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time
    Text: MITSUBISHI Nch IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 ● VCES . 900V


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    PDF CT60AM-18F 20MAX. CT60AM-18F CT60am IGBT ct60am18f IGBT CT60AM IGBT 900v 60a IGBT 60A IGBT tail time

    CT60AM-18C

    Abstract: CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP
    Text: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector


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    PDF CT60AM-18C REJ03G0287-0100 CT60AM-18C CT60AM-18C-AD MICROWAVE SEMICONDUCTORS CORP

    DIODE 10D2

    Abstract: CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1
    Text: MITSUBISHI MITSUBISHI NchNch IGBT IGBT CT60AM-18F CT60AM-18F INSULATED INSULATED GATE GATE BIPOLAR BIPOLAR TRANSISTOR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN. 2 1 ➀ ➁ ➂ 0.5 3 5.45 5.45 4.0 ● VCES . 900V


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    PDF CT60AM-18F 20MAX. DIODE 10D2 CT60AM-18F 102 TRANSISTOR bipolar transistor DIODE 10D1 IGBT 900v 60a IGBT tail time IGBT CT60AM 10d1

    CT60AM-18F

    Abstract: IGBT 900v 60a ct60am18F ct60am DSA007480
    Text: MITSUBISHI Nch IGBT ARY CT60AM-18F MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 2 6 20MAX. φ3.2 2.5 1 26 ➃ 20.6MIN.


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    PDF CT60AM-18F 20MAX. CT60AM-18F IGBT 900v 60a ct60am18F ct60am DSA007480

    CT60AM-18C-AD

    Abstract: CT60AM-18C
    Text: CT60AM-18C Insulated Gate Bipolar Transistor REJ03G0287-0100 Rev.1.00 Aug.20.2004 Features • • • • VCES : 900 V IC : 60 A Integrated fast-recovery diode For voltage-resonance Appearance Figure TO-3PL 2, 4 4 1 : Gate 2 : Collector 3 : Emitter 4 : Collector


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    PDF CT60AM-18C REJ03G0287-0100 CT60AM-18C-AD CT60AM-18C

    298G8

    Abstract: 117E16 240/TDA 2606
    Text: 11-13 Port Road Queenstown, SA 5014 ABN 53 008 189 535 Tel: 8 8240 2244 Fax: 8 8240 2255 Web: www.hammondmfg.com E-mail: [email protected] 2012 Australian Trade Price List Transformers visit us at www.hammondmfg.com Effective date: September 1, 2012 Replaces all other Price Lists


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    PDF AUDIST-T12 PHC25KGA PHC25LGA PHC50AGA PHC50JGA PHC50KGA PHC50LGA PT120CF PT120PC VT55A 298G8 117E16 240/TDA 2606

    ALNUP+161609

    Abstract: No abstract text available
    Text: HAMMOND MANUFACTURING CO. INC. 475 Cayuga Rd., Suite 100 Cheektowaga, NY 14225 Tel: 716 630-7030 Fax: (716) 630-7042 www.hammondmfg.com Manufacturer’s Suggested U.S. Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures


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    PDF 106EE ALNUP+161609

    cbb22

    Abstract: No abstract text available
    Text: HAMMOND MANUFACTURING CO. LTD. 394 Edinburgh Road North Guelph, Ontario N1H 1E5 Tel: 519 822-2960 Fax: (519) 822-0715 www.hammondmfg.com Manufacturer’s Suggested Canadian Resale Pricing Transformers & Inductors Small Enclosures Outlet Strips Electrical Enclosures


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    PDF 106EE cbb22

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


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    PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: HAMMOND ELECTRONICS LTD. 1 Onslow Close, Kingsland Business Park Basingstoke, Hampshire, RG24 8QL Tel: 01256 812 812 Fax: 01256 332 249 e-mail: [email protected] www.hammondmfg.com Euro Trade Price List Small Enclosures Transformers & Inductors


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    PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    CT60AM-18C

    Abstract: CT60AM-18C-AD
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    IGBT 900v 60a

    Abstract: CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am
    Text: MITSUBISHI Neh IGBT •§;> >>•+. :W> ^ ,^-s^ CT60AM-18F » ft ftud sxluö\ecl 1 * p- "TVi'S 's JJi, \\flVrts &T s°^ INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING • V c e s . 900V


    OCR Scan
    PDF CT60AM-18F 00V/jis -20A/jis IGBT 900v 60a CT60AM-18F IGBT 60A CT60am IGBT IGBT tail time ct60am

    CT60AM-18B

    Abstract: resonant inverter IGBT CT60AM CT60AM18B ct60am
    Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT60AM-18B RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 2 •— ' V c e s . 900V ' l e .60A


    OCR Scan
    PDF CT60AM-18B 20MAX. 57KH23 CT60AM-18B resonant inverter IGBT CT60AM CT60AM18B ct60am

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18B RESONANT INVERTER USE Dimensions in mm OUTLINE DRAWING 5 ‘ 2 0.5 • VCES . 900V @ •3 © GATE COLLECTOR EMITTER COLLECTOR


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    PDF CT60AM-18B

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh IGBT CT60AM-18F INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. « @ LJ/ 0.5 5.45 5.45 • V c e s . 900V o © • le .60A


    OCR Scan
    PDF CT60AM-18F 20MAX.

    IGBT CT60AM

    Abstract: CT60AM-18F
    Text: MITSUBISHI Neh IGBT CT60AM-18F -3 ;' \> V.aI i«'ai.Ssv>w8tì' 0 soW INSULATED GATE BIPOLAR TRANSISTOR CT60AM-18F OUTLINE DRAWING Dimensions in mm 5 20MAX. <>3.2 •— D 0.5 5.45 5.45 • V c e s .900V


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    PDF CT60AM-18F 20MAX. IGBT CT60AM CT60AM-18F

    transistor 3005

    Abstract: transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE OUTLINE DRAWING Dimensions in mm 5 20MAX. >3.2 «— © 0.5 5.45 5.45 • V ces . 1000V © © © GATE COLLECTOR EMITTER


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    PDF CT60AM-20 20MAX. T0-220S, MAX240Â MAX60S O-220, O-220FN, O-220C, O-220S transistor 3005 transistor 3005 2 CT60AM-20 transistor FS 20 SM L 3005 TRANSISTOR CT60AM20 transistor TO-220 Outline Dimensions K 4005 transistor resonant inverter ct FS 8201

    CT60AM-20

    Abstract: CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT60AM-20 RESONANT INVERTER USE CT60AM-20 • VCES . 1000V • 1C . •• ■60A • Integrated Fast Recovery Diode


    OCR Scan
    PDF CT60AM-20 CT60AM-20 CT60AM20 TRANSISTOR ct60am resonant inverter CT60AM

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


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    PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p