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Kyocera AVX Components CR11206T0100JTR High Frequency/RF Resistors 100ohms 5% 15W
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Mouser Electronics	CR11206T0100JTR		818			1 $2.97 10 $2.66 100 $1.97 1000 $1.55 10000 $1.55	Buy Now
Kyocera AVX Components CR11206T0100JBK RF RESISTOR
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Richardson RFPD	CR11206T0100JBK				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CR11206T0100J Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147
Untitled Abstract: No abstract text available Text: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard 10 Ω - 200 Ω available Top View Resistive Area A Overcoat • Resistive Tolerance: ±2%, ±5% standard • Operating Temp Range: -55 to +150˚C	Original	PDF	MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J 1000-hr. Mil-PRF-55342.
CR12525T0100J Abstract: CR11005T0100J CR11206T0100J CR13737T0100J CR12010T0100J Text: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C	Original	PDF	MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J CR13737T0100J
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4
Untitled Abstract: No abstract text available Text: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C	Original	PDF	MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J
CR13737T0100J Abstract: CR11206T0100J CR11005T0100J Text: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C	Original	PDF	MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J CR13737T0100J
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular ampliier applications in the 2300 to 2700 MHz frequency band. Manufactured with Inineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4
Untitled Abstract: No abstract text available Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC260202FC PTFC260202FC 10-watt H-37248-4
Untitled Abstract: No abstract text available Text: AT C H I G H P O W E R R E S I S T I V E P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 10 to 200 Ω available. Top View Resistive Area A Overcoat • Resistive Tolerance: ±5% Standard 2% Available .	Original	PDF	MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J 120er 1000-hr.
CR11206T0100J Abstract: No abstract text available Text: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C	Original	PDF	MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J
Untitled Abstract: No abstract text available Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC210202FC PTFC210202FC 10-watt
Untitled Abstract: No abstract text available Text: PTFC210202FC Thermally-Enhanced High Power RF LDMOS FET 28 W, 28 V, 1800 – 2200 MHz Description The PTFC210202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2110 to 2170 MHz frequency band. Manufactured with Infineon's	Original	PDF	PTFC210202FC PTFC210202FC 10-watt
CR11005T0100J Abstract: No abstract text available Text: AT C H I G H P O W E R R E S I S T O R P R O D U C T S Chip Resistors Style CR General Specifications • Resistance: 50 and 100 Ω standard. 25 to 500 Ω available. • Resistive Tolerance: ±5% Standard 2% Available . • Operating Temp Range: -55 to +150˚C	Original	PDF	MIL-PRF-55342 CR11005T0100J CR11206T0100J CR12010T0100J CR12525T0100J CR13725T0100J CR13737T0100J