CQX 86
Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DTE/DM1M72DTE
64/1Mb
16Kbytes
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U1615
U2-14
U217
u416
CQX 89
CQv 89
512kx8 dram simm
u332
u1515
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A09t
Abstract: CQX 89
Text: DM2223/2233 Multibank Burst EDO EDRAM 512Kb x 8 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features 8Kbit SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbit DRAM Array for 30ns Access to Any New Page
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DM2223/2233
512Kb
DM2223T
A09t
CQX 89
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U10A-14
Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DT6/DM512K72DT6
512Kb
64/512Kb
168BD5-TR
DM512K72DT
72-bit
U10A-14
U11A-8
CQX 86
512kx8 dram simm
cqx 87
u12A
U11C
U832
U12A-14
u318
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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U1615
Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
64/1Mb
16Kbytes
168BD5-TR
DM1M72DT6
72-bit
U1615
u1515
U24A
U20-16
U217
U1613
U23C-36
U16-18
U17-16
transistor BMO 123
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CQX 86
Abstract: U832 write-verify RaR8 81 u218 A09T
Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64DTE/DM512K72DTE
512Kb
64/512Kb
168BD5-TR
DM512K72DTE
72-bit
CQX 86
U832
write-verify
RaR8 81
u218
A09T
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Text: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
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Untitled
Abstract: No abstract text available
Text: 43G227 1 IHAS GGS3177 22T 33 HARRIS HSP43881 SEMICONDUCTOR Digital Filter January 1994 Features Description • Eight Filter Cells • 0 to 30MHz Sample Rate The HSP43881 is a video speed Digital Filter DF designed to efficiently implement vector operations such as FIR digital
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43G227
GGS3177
HSP43881
30MHz
HSP43881
26-bit
SUMO-25,
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Untitled
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1021 Programmable 8-Bit Silicon Delay Line PIN ASSIGNMENT FEATURES • All-silicon time delay c 16 15 : OUT Q/PO c 3 14 S P1 c 4 13 : 12 : P7 11 : 10 C E c • Programmable using 3-wire serial port or 8-bit part llel port P2 c P3 c • Leading and trailing edge accuracy
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DS1021
16-pin
DS1021S
DS1021
DS1021s.
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ESI 2160
Abstract: u332 U11B2 cqx 87 u918
Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page
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DM512K64D
6/DM512K720T6MultibankEDO
512Kb
DM512K72DT6-12
72-blt
ESI 2160
u332
U11B2
cqx 87
u918
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Untitled
Abstract: No abstract text available
Text: paradîgm ' P R E L IM IN A R Y PDM34089 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter Features Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors Single 3.3V power supply Mode selectable for interleaved or linear burst:
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PDM34089
680X0
680x0
100-pin
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Untitled
Abstract: No abstract text available
Text: _ ADVANCE INFORMATION Paradigm 3.3V 32K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the i486 , Pentium™, 680X0 and Power PC™ processors 66.6,50,40 MHz The PDM34072 is a 1,048,576 bit synchronous ran
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680X0
PDM34072
680X0,
PDM34072
100-pin
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PJ 52
Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
DM1M72DT6
72-blt
PJ 52
U1615
U18-18
u1515
U23D-43
U176
U21-18
u1818
L115
U218
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U23C-36
Abstract: No abstract text available
Text: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page
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DM1M64DT6/DM1M72DT6
16Kbytes
DM1M72DT6-
72-bit
U23C-36
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Untitled
Abstract: No abstract text available
Text: , PRELIMINARY PARADIGM PDM3408Ô 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz □ Single 3.3V power supply
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PDM3408Ã
680X0
PDM34088
PDM34088
64Kx32)
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Untitled
Abstract: No abstract text available
Text: IBM14M3272IBM14M6472 IBM14M3264 High Performance SRAM Modules Features • 256K and 512K secondary cache module family using Synchronous and Asynchronous SRAM for PowerPC applications • Single +3.3V or +5V, +/- 5% power supply • Organized as a 32K or 64K x 72 package on a
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IBM14M3272IBM14M6472
IBM14M3264
136-lead,
50H4644
SA14-4701-02
IBM14M6472
IBM14M3272
E21031;
256KB
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pin DIAGRAM OF IC 7428
Abstract: No abstract text available
Text: IBM14N3264 IBM14N6464 High Performance SRAM Modules Features • 256KB and 512KB secondary cache module family for Intel Triton chip set. • Organized as a 32K or 64K x 64 package on a 4.34” x 1.13”, 160-lead, Dual Read-out DIMM • Available in interleaved ¡486/Pentium burst
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IBM14N3264
IBM14N6464
256KB
512KB
160-lead,
486/Pentiumâ
CELP2X80SC-3Z48
pin DIAGRAM OF IC 7428
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Untitled
Abstract: No abstract text available
Text: , PARADIGM PRELIMINARY PDM340ÔÔ 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz □ Single 3.3V power supply
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PDM340Ã
680X0
PDM34088
1050C)
00-pin
PDM34088
64Kx32)
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Untitled
Abstract: No abstract text available
Text: Paradigm PDM34078 3.3V 32K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz □ Single 3.3V power supply
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PDM34078
680X0
680x0
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CQX 89
Abstract: pulse width measure counter delay clock DS1023 DS1023-100 DS1023-200 DS1023-25 DS1023-50 DS1023-500 DS1023S
Text: Î * DALLAS wmfâQHwœrom DS1023 8-Bit Programmable Timing Element www.dalsemi.com FE A TU R E S • Step sizes of 0.25, 0.5 ns, 1 ns, 2 ns, 5 ns ■ On-chip reference delay ■ Configurable as delay line, pulse width modulator, or free-running oscillator
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DS1023
16-pin
DS1023
300-mil
DS1023S
ds1023-100
ds1023-200
dsi023-600
CQX 89
pulse width measure counter delay clock
DS1023-100
DS1023-200
DS1023-25
DS1023-50
DS1023-500
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marking code JSW
Abstract: IDT709379 IDT709379L 016-l JSW 70
Text: HIGH-SPEED 32K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709379L F e a tu re s * True Dual-Ported memory cells which allow simultaneous access o f the same memory location High-speed clock to data access - * ♦ Full synchronous operation on both ports
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IDT709379L
5/9/12ns
IDT709379L
t00-pin
PN100-1)
18-Bit)
marking code JSW
IDT709379
016-l
JSW 70
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