Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CQX 86 Search Results

    CQX 86 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CQX86 Philips Components Philips Data Book Scan Scan PDF
    CQX86A Philips Components Philips Data Book Scan Scan PDF
    CQX86K Philips Components Philips Data Book Scan Scan PDF

    CQX 86 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DM2200 EDRAM 4Mb x 1 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features • ■ ■ 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page Fast 4Mbit DRAM Array for 30ns Access to Any New Page Write Posting Register for 12ns Random Writes and Burst Writes


    Original     		PDF DM2200 256-byte no-wait32)

    Untitled

    Abstract: No abstract text available
    Text: CD & CQ Series CM Interface Chokes for Data and Signal Lines Features • High attenuation over a wide frequency range • Low interwinding and coupling capacitance • Wide inductance range • Excellent quality at extremely competitive price due to high volume production


    Original     		PDF ISO-9001 TS-16949 ISO-14001 J-STD-020C 42Vac 50/60Hz) 80Vdc IEC68-1

    TSSP 4400

    Abstract: CQX 47 CQX 13 tssp
    Text: TELEFUNKEN Semiconductors TSSP 4400 GaAs/GaAlAs Infrared Emitting Diode in Side View Package Description TSSP 4400 is a high intensity infrared emitting diode in GaAlAs on GaAs – technology, molded in a clear, blue–grey tinted plastic package with spherical side view lens.


    Original     		PDF D-74025 TSSP 4400 CQX 47 CQX 13 tssp

    CQX 86

    Abstract: U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515
    Text: DM1M64DTE/DM1M72DTE Multibank Burst EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		PDF DM1M64DTE/DM1M72DTE 64/1Mb 16Kbytes 168BD5-TR DM512K72DTE 72-bit CQX 86 U1615 U2-14 U217 u416 CQX 89 CQv 89 512kx8 dram simm u332 u1515

    920A7

    Abstract: No abstract text available
    Text: DM2202/2212 EDRAM 1Mb x 4 Enhanced Dynamic RAM Enhanced Memory Systems Inc. Product Specification Features • ■ ■ 2Kbit SRAM Cache Memory for 12ns Random Reads Within a Page Fast 4Mbit DRAM Array for 30ns Access to Any New Page Write Posting Register for 12ns Random Writes and Burst Writes


    Original     		PDF DM2202/2212 256-byte 920A7

    gigabyte 945

    Abstract: gigabyte 945 circuit diagram U727 edram
    Text: Enhanced Memory Systems Inc. DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2202


    Original     		PDF DM1M36SJ/DM1M32SJ 1Mbx36/1Mbx32 DM1M36SJ 28-pin DM2202 DM2212 DM1M32SJ DM1M36SJ1 gigabyte 945 gigabyte 945 circuit diagram U727 edram

    CAL03

    Abstract: ramtron DM2202J
    Text: Enhanced Memory Systems Inc. DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM2M36SJ achieves 2Mb x 36 density by mounting 18 1Mb x 4 EDRAMs, packaged in 28pin plastic SOJ packages, on both sides of the multi-layer


    Original     		PDF DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 DM2M36SJ 28pin DM2202 DM2212 DM2M32SJ DM2M36SJ CAL03 ramtron DM2202J

    U10A-14

    Abstract: U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318
    Text: DM512K64DT6/DM512K72DT6 Multibank EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features • 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		PDF DM512K64DT6/DM512K72DT6 512Kb 64/512Kb 168BD5-TR DM512K72DT 72-bit U10A-14 U11A-8 CQX 86 512kx8 dram simm cqx 87 u12A U11C U832 U12A-14 u318

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission


    Original     		PDF

    U1615

    Abstract: u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123
    Text: DM1M64DT6/DM1M72DT6 Multibank EDO EDRAM 1Mb x 64/1Mb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 16Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache • Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		PDF DM1M64DT6/DM1M72DT6 64/1Mb 16Kbytes 168BD5-TR DM1M72DT6 72-bit U1615 u1515 U24A U20-16 U217 U1613 U23C-36 U16-18 U17-16 transistor BMO 123

    CQX 86

    Abstract: U832 write-verify RaR8 81 u218 A09T
    Text: DM512K64DTE/DM512K72DTE Multibank Burst EDO EDRAM 512Kb x 64/512Kb x 72 Enhanced DRAM DIMM Enhanced Memory Systems Inc. Product Specification Features 8Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache • Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    Original     		PDF DM512K64DTE/DM512K72DTE 512Kb 64/512Kb 168BD5-TR DM512K72DTE 72-bit CQX 86 U832 write-verify RaR8 81 u218 A09T

    D0-35

    Abstract: u327
    Text: Enhanced Memory Systems Inc. DM1M36SJ6/DM1M32SJ6 Multibank EDO 1Mbx36/1Mbx32 Enhanced DRAM SIMM Product Specification Features Architecture The DM1M36SJ achieves 1Mb x 36 density by mounting nine 1Mb x 4 EDRAMs, packaged in 28-pin plastic SOJ packages, on a multilayer substrate. Eight DM2242


    Original     		PDF DM1M36SJ6/DM1M32SJ6 1Mbx36/1Mbx32 DM1M36SJ 28-pin DM2242 DM2252 DM1M32SJ6 DM1M36SJ6 D0-35 u327

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


    OCR Scan     		PDF

    led 7 segment anode TIL 702

    Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
    Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9


    OCR Scan     		PDF 10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150

    U716

    Abstract: U6915 1178Q
    Text: H Enhanced DM2M36SJ/DM2M32SJ 2Mbx36/2Mbx32 Enhanced DRAM SIMM IVfemoiy Suterns I x . Product Specification Features Architecture • 4KByte SRAM Cache Memory for 12ns Random Reads Within Two Active Cache Pages ■ Fast DRAM Array for 30ns Axessto Any New Page


    OCR Scan     		PDF DM2M36SJ DM2M32SJ 2Mbx36/2Mbx32 U716 U6915 1178Q

    ESI 2160

    Abstract: u332 U11B2 cqx 87 u918
    Text: Enhanced Memory Systems Inc. DM512K64DÎ6/DM512K720T6MultibankEDO EDRAM 512Kb x6 4 /5 m x 72 EnhancedDRAM D m Product Specification Features • 8 Kbytes SRAM Cache Memory for 12ns Random Reads Within Four Active Pages Multibank Cache ■ Fast 4Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM512K64D 6/DM512K720T6MultibankEDO 512Kb DM512K72DT6-12 72-blt ESI 2160 u332 U11B2 cqx 87 u918

    Untitled

    Abstract: No abstract text available
    Text: paradîgm ' P R E L IM IN A R Y PDM34089 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter Features Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors Single 3.3V power supply Mode selectable for interleaved or linear burst:


    OCR Scan     		PDF PDM34089 680X0 680x0 100-pin

    351N

    Abstract: No abstract text available
    Text: Paradigm PDM34078 3.3V 32K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz □ Single 3.3V power supply


    OCR Scan     		PDF 680X0 PDM34078 100-pin PDM34078 32Kx32) 351N

    Untitled

    Abstract: No abstract text available
    Text: _ ADVANCE INFORMATION Paradigm 3.3V 32K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the i486 , Pentium™, 680X0 and Power PC™ processors 66.6,50,40 MHz The PDM34072 is a 1,048,576 bit synchronous ran­


    OCR Scan     		PDF 680X0 PDM34072 680X0, PDM34072 100-pin

    PJ 52

    Abstract: U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218
    Text: Enhanced Memory Systems Inc. DM1M64DT6/DM1M72DT6 Multibank EOO EDRAM 1Mb x fflM b x 72 Enhanced DRAM DIMM Product Specification Features • l 6Kbytes SRAM Cache Memory for 12ns Random Reads Within Eight Active Pages Multibank Cache ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM1M64DT6/DM1M72DT6 DM1M72DT6 72-blt PJ 52 U1615 U18-18 u1515 U23D-43 U176 U21-18 u1818 L115 U218

    U23C-36

    Abstract: No abstract text available
    Text: •K p n h o n p p f V i i DM 1M64DT6/DM1M72DT6 Multibank EDOEDRAM m m * d 1 2 ra m d i m m ProductSpecification Features ■ 16Kbytes SAM Cache Memory for 12ns Random Reads Within Eght Active Pages Multi bank CSche ■ Fast 8Mbyte DRAM Array for 30ns Access to Any New Page


    OCR Scan     		PDF DM1M64DT6/DM1M72DT6 16Kbytes DM1M72DT6- 72-bit U23C-36

    Untitled

    Abstract: No abstract text available
    Text: , PRELIMINARY PARADIGM PDM3408Ô 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features Description □ Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz □ Single 3.3V power supply


    OCR Scan     		PDF PDM3408Ã 680X0 PDM34088 PDM34088 64Kx32)