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    cbrhdsh1-40l

    Abstract: No abstract text available
    Text: PROCESS CPD56 Schottky Rectifier 1 Amp, Low VF Schottky Barrier Rectifier Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 46 x 46 MILS Die Thickness 11.8 MILS Anode Bonding Pad Area 32 x 32 MILS Top Side Metalization Ag - 20,000A Back Side Metalization


    Original     		PDF CPD56 CBRHDSH1-40L cbrhdsh1-40l