InGaas PIN photodiode, 1550 nec
Abstract: APD 1550 nm APD for fiber test InGaAs apd photodiode InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR pin Photodiode 1550 nm NR8360JP-BC InGaAs photodiode 1310 1550 InGaas PIN photodiode, 1550 sensitivity application
Text: PRELIMINARY DATA SHEET NEC's ø30 µm InGaAs APD IN DIP PACKAGE NR8360JP-BC FOR OTDR APPLICATION FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm NEC's NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is
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NR8360JP-BC
NR8360JP-BC
14-PIN
InGaas PIN photodiode, 1550 nec
APD 1550 nm
APD for fiber test
InGaAs apd photodiode
InGaas APD photodiode, 1550 sensitivity
apd 1550 OTDR
pin Photodiode 1550 nm
InGaAs photodiode 1310 1550
InGaas PIN photodiode, 1550 sensitivity application
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photodiode 1550nm nep
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input
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264-339759-VAR
12lead
200um]
200um,
Opto759-VAR
photodiode 1550nm nep
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NR8360JP-BC
Abstract: InGaAs apd photodiode C10535E C11531E NR8360JP-BC-AZ X13769X CEL avalanche photodiode ingaas ghz B3350
Text: PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and
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NR8360JP-BC
14-PIN
NR8360JP-BC
InGaAs apd photodiode
C10535E
C11531E
NR8360JP-BC-AZ
X13769X
CEL avalanche photodiode ingaas ghz
B3350
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InGaAs apd photodiode
Abstract: C10535E C11531E NR8360JP-BC
Text: PRELIMINARY DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 µm InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications
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NR8360JP-BC
14-PIN
NR8360JP-BC
InGaAs apd photodiode
C10535E
C11531E
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Untitled
Abstract: No abstract text available
Text: DATA SHEET PHOTO DIODE NR8360JP-BC φ 30 m InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated enabling the temperature control of the APD chip. It is designed for long-reach optical communications and
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NR8360JP-BC
14-PIN
NR8360JP-BC
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PerkinElmer tr 1700
Abstract: PerkinElmer Avalanche Photodiode
Text: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche
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12-lead
DTS0108P
PerkinElmer tr 1700
PerkinElmer Avalanche Photodiode
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NR8360JP-BC
Abstract: datasheet apd 1550 InGaAs apd photodiode apd 1550 OTDR avalanche photodiode ingaas ghz CEL avalanche photodiode ingaas ghz cooler thermistor APD InGaAs APD photodiode 1550
Text: PRELIMINARY DATA SHEET ø30 µm InGaAs AVALANCHE PHOTO DIODE NR8360JP-BC 14-PIN DIP MODULE WITH TEC FEATURES DESCRIPTION • HIGH QUANTUM EFFICIENCY: η = 85 % @ λ = 1310 nm η = 80 % @ λ = 1550 nm The NR8360JP-BC is an InGaAs avalanche photodiode module with single mode fiber. A thermoelectric cooler is integrated
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NR8360JP-BC
14-PIN
NR8360JP-BC
datasheet apd 1550
InGaAs apd photodiode
apd 1550 OTDR
avalanche photodiode ingaas ghz
CEL avalanche photodiode ingaas ghz
cooler thermistor APD
InGaAs APD photodiode 1550
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Untitled
Abstract: No abstract text available
Text: PGA-200 Cooled Single Photon Counting Avalanche Photodiode - Discrete The Princeton Lightwave SPAD is an InGaAs/InP avalanche photodetector designed specifically for single photon counting applications. The device is intended for use at pulsed voltage biases above
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PGA-200
6529E-03,
2102E-04,
1874E-09
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cooler thermistor APD
Abstract: 3959 8-pin sar3500
Text: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed
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SAR3500
SAR3500
cooler thermistor APD
3959 8-pin
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAR3500 DESCRIPTION The SAR3500 is based on a “reach-through” structure for excellent quantum efficiency and high speed. The APD is hermetically sealed in a modified TO-8 package. The SAR3500 is also available in a hermetically sealed
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SAR3500
SAR3500
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Untitled
Abstract: No abstract text available
Text: PGA-308 Cooled Single Photon Counting Avalanche Photodiode – Fiber Pigtailed The Princeton Lightwave SPAD is an InGaAs/InP avalanche photodetector designed specifically for single photon counting applications. The device is intended for use at pulsed voltage biases above the
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PGA-308
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photodiode InGaAs NEP
Abstract: No abstract text available
Text: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier
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12-lead
200um]
Opto769-101
photodiode InGaAs NEP
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PNA-208
Abstract: No abstract text available
Text: PNA-20X Negative Feedback Avalanche Diodes NFADs Product Features • Single photon sensitivity SWIR (1000 – 1700 nm) response High gain and low noise Fast response with precise timing Compact and robust Simple readout
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PNA-20X
8642E-03,
3085E-04,
0660E-07
PNA-208
PNA-208
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NR8360JP-BC
Abstract: bc 7-25 InGaAs apd photodiode PX10160E
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884
S2382
S5139
S8611
S2383
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884
S2381
S2382
S5139
S8611
S2383
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S4315
Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 S2381
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884
S2381
S2382
S5139
S8611
S2383
S4315
S2382
S2383
S2383-10
S2384
S2385
S3884
S5139
S8611
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s2381
Abstract: S2382 S2383-10 S2383 S2384 S2385 S3884 S5139 S8611
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884
S2381
S2382
S5139
S8611
S2383
S2382
S2383-10
S2383
S2384
S2385
S3884
S5139
S8611
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884
S2382
S5139
S8611
S2383
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S2381
Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884
S2381
S2382
S5139
S8611
S2383
S2382
S2383
S2383-10
S2384
S2385
S3884
S5139
S8611
Si apd photodiode rangefinder
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NDL5592
Abstract: InGaAs apd photodiode NDL5506P NDL5506PC NDL5506PS NDL5506PSC NDL5530 NDL5530C
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NDL5516PC
Abstract: NDL5592 InGaAs apd photodiode NDL5500 NDL5500C NDL5516P NDL5520C NDL5530 NDL5530C
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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10 gb laser diode
Abstract: E2560S34 70002 E2561H53 E2561H54 E2561H55 E2561H56 E2561H57 E2561H58 E2561H59
Text: Data Sheet March 2003 E2561-Series 10 Gb/s EML Modules for up to 80 km Transmission Description Tri Qu int OP TO EL CT 10 RO N Gb /s L 2561 ICS, IN C. ase rM od ule Features • Integrated electroabsorption modulator ■ 1.5 µm wavelength, full C-band
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E2561-Series
DS02-298
10 gb laser diode
E2560S34
70002
E2561H53
E2561H54
E2561H55
E2561H56
E2561H57
E2561H58
E2561H59
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S2383
Abstract: No abstract text available
Text: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings
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S2381
S2385,
S5139,
S8611,
S3884,
S4315
S2382
S5139
S8611
S2383
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