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    COLLMER IGBT Search Results

    COLLMER IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    COLLMER IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    igbt 600V

    Abstract: 15LS-060 6MBI 15LS-060
    Text: 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A 6MBI 15LS-060 6 Pack IGBT 600V 15A For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-733-1700 972-381-9991 Fax http://www.collmer.com


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    PDF 15LS-060 igbt 600V 15LS-060 6MBI 15LS-060

    igbt

    Abstract: EXB 844 transistor igbt hybrid EXB844 collmer
    Text: IGBT Driving Hybrid IC EXB 844 Specification page 1 IGBT-Driving Hybrid ICs EXB 844 Specification page 2 IGBT-Driving Hybrid ICs EXB 844 Specification page 3 IGBT-Driving Hybrid ICs EXB 844 Specification page 4 IGBT-Driving Hybrid ICs EXB 844 Specification


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    EXB844

    Abstract: hybrid igbt manual exb8.-series EXB 844
    Text: IGBT-Driving Hybrid ICs EXB8.-Series Application Manual Content: 1. Introduction page 1 2. Features page 1 3. Applications page 1 4. Comprehensive Chart page 1 5. Dimensions page 1 6. Functional Block Diagrams page 2 7. Ratings and Characteristics page 2


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    IGBT ac switch circuit

    Abstract: TOSHIBA IGBT snubber IGBT welding circuit scr control circuit for welding rifa snubber arc welding rectifier arc welding welding rectifier circuit scr welding igbt rectifier circuit
    Text: SNUBBER CAPACITORS FOR IGBT INS ULATED GATE BIPOLAR TRANS IS TOR The snubber’s primary function is to suppress transient voltages in applications where the switching is turned off and a large spike or peak current is generated. When an IGBT switches off, for example, a transient or surge voltage is generated by the parasitic inductance in the


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    igbt 1200v 600a

    Abstract: No abstract text available
    Text: n Outline Drawing IGBT MODULE n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls


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    PDF 600mA igbt 1200v 600a

    6x25A

    Abstract: No abstract text available
    Text: 6-Pack IGBT 1200V 6x25A 6MBI 25S-120L n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off


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    PDF 6x25A 25S-120L 6x25A

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    Abstract: No abstract text available
    Text: n Outline Drawing IGBT MODULE n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls


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    PDF 600mA

    1200V

    Abstract: No abstract text available
    Text: 6-Pack IGBT 1200V 6x35A 6MBI 35S-120L n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off


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    PDF 6x35A 35S-120L 1200V

    Collmer SC

    Abstract: No abstract text available
    Text: 6-Pack IGBT 1200V 6x50A 6MBI 50S-120L n Outline Drawing IGBT MODULE S-Series n Features • NPT-Technologie • Solderable Package • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off


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    PDF 6x50A 50S-120L Collmer SC

    fuji darlington power module

    Abstract: fuji MOV collmer
    Text: ABOUT COLLMER SEMICONDUCTOR Typical of Collmer Semiconductor’s unique emphasis on high power semiconductors is the company’s electric vehicle test bed for power de­ vices employed in the inverter that drives its induction motor. This converted General Motors


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    IGBT board FUJI

    Abstract: snubber resistance of IGBT thyristor 750vdc l series IGBT 150a 1200v IGBT FUJI module RBSOA circuit of six pack module igbt fuji igbt transistor modules 3rd Generation of 1200V IGBT Modules fuji igbt
    Text: The Design Advantages of a Current Limited Third Generation IGBT Module Jerry Gallagher, Collmer Semiconductor Inc., Dallas, Texas Third generation IGBT modules that include a non-latch-up circuit simplify circuit designs. The NLU limits short circuit currents to simplify


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    7D100A-050EHR

    Abstract: 7D30A-050EHR 7D75A-050EHR 7D50A-050EHR 2R6D15A-050AJV 7D150A-050EHR 7d30a-050 7d50a050 6D10A-050EJR 7d30a
    Text: COLLMER SEMICONDUCTOR INC MflE J> m 22367*12 00GlS7b 3flG « C O L Power Darlington Modules 'T ^ - ^ EXB6S0 EXBS40 900 VOLT IGBTs FOR RESONANT APPLICATIONS Volts (m in) le Am ps (min) 900 900 50 60 VCE8 Device Type IMB50-090A MBT001 Rth (J-c) °C/Watts (max)


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    PDF 00GlS7b EXBS40 EXB840 IMB50-090A MBT001 T03PL EXB850 EXB840 EXB851 EXB841 7D100A-050EHR 7D30A-050EHR 7D75A-050EHR 7D50A-050EHR 2R6D15A-050AJV 7D150A-050EHR 7d30a-050 7d50a050 6D10A-050EJR 7d30a

    7D100A-050EHR

    Abstract: 7D30A-050EHR 7d50a-050ehr 7D75A-050EHR 7D30A 7D150A-050EHR 7d30a-050 power bjt transistor 600v 7D50A BJT 1200V
    Text: COLLMER SEMICON DUC TOR INC 34E ». 22307*12 OOQISbS 0 ICOL Pilli T o ' ^ ' 3 5 ocpua Intelligent Pow er Modules 600V 1200V PM advantages: Simplify controller design Shorten development time PMs are used in: Servo systems General-purpose drives Heat pump/compressor drives


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    PDF 240VAC 480VAC 10Ato 20kHz 100mA) 7D100A-050EHR 7D30A-050EHR 7d50a-050ehr 7D75A-050EHR 7D30A 7D150A-050EHR 7d30a-050 power bjt transistor 600v 7D50A BJT 1200V

    6MBI15-060

    Abstract: 2MBI200-060 2mb1100 2MB1100-060 6MBI100-060 6MBI30-060 2MBI300-060 2MBI50-060 6MBI50-060 2MB1150-060
    Text: COLLMER SEMICONDUCTOR I N C 25E D • S23Û7T5 0001103 b ■ IG B T M O D U L E S R atin g s and S p e c ific a tio n s | 1 | 6 0 0 volts class IG B T m odules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for


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    PDF 2MBI50-060 6MBI15-060 6MBI20-060 6MBI30-060 6MBI50-060 6MBI75-060 6MBI100-060 2MBI200-060 2mb1100 2MB1100-060 2MBI300-060 2MB1150-060

    2MBI150-120

    Abstract: 2MBI50-120 2MB175-120 6MBI15-120 2MBI75-120 2mb1100 2mb150 6MBI50-120 6MBI25-120 2MBI25-120
    Text: i COLLMER SEM ICONDUCTOR IN C 2S E D • 22307^2 00D1104 T~-33~‘fO ñ Hi I 3 [ 1 2 0 0 volts class IG B T modules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for power converters. • The voltage drive element enables the drive circuit to be miniaturized and used in common.


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    PDF 00D1104 2MBI25-120 2MBI50-120 MBI300-120 6MBI8-120 6MBI15-120 6MBI25-120 6MBI50-120 2MBI150-120 2MB175-120 2MBI75-120 2mb1100 2mb150

    2mbi200 060

    Abstract: 6MBI20-060 6MBI100-060 6mb175 6MBI15-060 2mb175 2mb1300 2mb1200 2mb150 2MBI200-060
    Text: I COLLMER SEMICONDUCTOR IN C 25E D • S23Û7T5 0D011D3 b ■ IG B T M O D U L E S R atin g s and S p e c ific a tio n s | 1 | 6 0 0 volts class IG B T modules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for


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    PDF 0D011D3 2MBI50-060 6MBI20-060 6MBI30-060 6MBI50-060 6MBI75-060 6MBI100-060 2mbi200 060 6mb175 6MBI15-060 2mb175 2mb1300 2mb1200 2mb150 2MBI200-060

    nana electronics

    Abstract: nana electronics current sensors Hall Current Sensors NANA electronics Hall Current Sensors
    Text: CONTENTS Fuji Electric Products Intelligent Power M o dule s. 2 IGBT, G-Series Six Packs .2


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    nana electronics

    Abstract: nana electronics current sensors "nana electronics" Hall Current Sensors fuji ipm NANA electronics Hall Current Sensors nana electronics current sensors lx-15 collmer Voltage Multipliers collmer igbt fuji igbt n-series
    Text: CONTENTS Fuji Electric Products IGBT, S-Series Fourth Generation, PIM, 6-Packs. 2 IGBT, R-Series Fourth Generation, IP M . 3 IGBT, P-Series Third Generation, Singles & D u a ls . 4


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    Untitled

    Abstract: No abstract text available
    Text: IGBT GATE-DRIVE DESCRIPTION: FEATURES: The insulated gate bipolar transistor IGBT is • Two series available: Standard Series: for up to 10kHz operation High-speed series: for up to 40kHz operation increasingly being used in low-noise, highperformance power supplies, inverters,


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    PDF 10kHz 40kHz EXB844) 2500VAC EXB840, EXB844 EXB840 EXB850, EXB851

    IGBT driver EXB841

    Abstract: IGBT for welding inverter ups electrical symbols EXB841 Collmer Semiconductor high voltage power supply IGBT gate driver welding
    Text: IGBT GATE-DRIVE DESCRIPTION: FEATURES: The insulated gate bipolar transistor IGBT is • increasingly being used in low-noise, high- Two series available: Standard Series: for up to 10kHz operation High-speed series: for up to 40kHz operation performance power supplies, inverters,


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    PDF 2500VAC 10kHz 40kHz EXB840, EXB850 EXB840 EXB851 EXB841 IGBT driver EXB841 IGBT for welding inverter ups electrical symbols EXB841 Collmer Semiconductor high voltage power supply IGBT gate driver welding

    IGBT 50 amp 1200 volt

    Abstract: IGBT 250 amp 200 amp 120 V igbt 7MBR15NE120 7MBR30NE060 6MBI10GS-060 7MBR75GE060 7MBR10NF120 6mbi15gs-060 250 Amp current 1500 volt diode
    Text: THIRD GENERATION IGBT 1200 & 1400 VOLT, HIGH SPEED SWITCHING & LOW NOISE IGBT MODULES, NPTTECHNOLOGY • 50 - 600 Amp Device Type 2MBI50P-140 2MBI75P-140 2MBI100PC-140 2MBI150PC-140 2MBI200PB-140 2MBI300P-140 1MBI600PX-120 1MBI600PX-140 Vces V g es Ic Volts


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    PDF 2MBI50P-140 2MBI75P-140 2MBI100PC-140 2MBI150PC-140 2MBI200PB-140 2MBI300P-140 1MBI600PX-120 1MBI600PX-140 7MBR10NF-120 7MBR15NF-120 IGBT 50 amp 1200 volt IGBT 250 amp 200 amp 120 V igbt 7MBR15NE120 7MBR30NE060 6MBI10GS-060 7MBR75GE060 7MBR10NF120 6mbi15gs-060 250 Amp current 1500 volt diode

    1MBI30L-060

    Abstract: 6MBI30FA-060 collmer igbt 2mbi200f 2mbi25f 1MBI50L-060
    Text: SECOND GENERATION IGBT 600 VOLT, F-SERIES MODULES, PT TECHNOLOGY • Low saturation voltage Device Type DUALS 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 SINGLES V c es lc Pc VcE sat PerlGBT Volts Cont. Amps Watts Max. Volts


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    PDF 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 1MBI300F-060 1MBI400F-060 6MBI8L-120 6MBI15L-120 1MBI30L-060 6MBI30FA-060 collmer igbt 2mbi200f 2mbi25f 1MBI50L-060

    1MBC15-060

    Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
    Text: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V


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    PDF 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 O-220 1MBC05D-060 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt

    LT 220 diode

    Abstract: No abstract text available
    Text: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0


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    PDF 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 TQ-22Q O-220 LT 220 diode