2sc2233
Abstract: Collector 5v npn TRANSISTOR 5v power transistor horizontal transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION •Collector-Emitter Breakdown Voltage:VCEO= 60V Min ·DC Current Gain: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation
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2SC2233
500mA;
2sc2233
Collector 5v npn TRANSISTOR
5v power transistor
horizontal transistor
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2N3904N
Abstract: 2N3904 tr 2n3904
Text: 2N3904N Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE sat =0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz
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2N3904N
STA3906A
2N3904
O-92N
KSD-T0C036-000
2N3904N
2N3904
tr 2n3904
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2n5076
Abstract: 2N5077
Text: high-rei power transistors 85 - 1 I SILICON NPN HI-VOLTAGE TRANSISTORS 5 Amp NORMALIZED CURRENT GAIN 200 ~ TA=lS0C ~ ISO w "- ~, ~ ~ ~ z• TAO 25°C ;( 100 C> I VCE '5V I- Z W Qi: SO a: ~ -. U TA: -SSoC o .01 .001 COllECTOR CURRENT, IC (AMPS) COllECTOR
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2N5660
2N5661
2N5662
2N5663
2n5076
2N5077
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TRANSISTOR SOT23, Vbe 8V
Abstract: FMMT614 DSA003700
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.
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FMMT614
500mA
500mA,
100mA,
100mHz
TRANSISTOR SOT23, Vbe 8V
FMMT614
DSA003700
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SOT-363 marking 05
Abstract: transistor e1 sot-363 TSAD143K TSCD143K TSCD143KCU6
Text: TSCD143K NPN Digital Transistor Pin assignment: 1. TR1 Gnd Emitter 2. TR1 Input (Base) 3. TR2 Output (Collector) 4. TR2 Gnd (Emitter) 5. TR2 Input (Base) 6. TR1 Output (Collector) Vcc = 50V Vin = - 5V ~ +30V Io = 100mA(max.) Features Equivalent Circuit Build-in bias resistor enable the configuration of an
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TSCD143K
100mA
TSC143K
OT-363
380uS,
SOT-363 marking 05
transistor e1 sot-363
TSAD143K
TSCD143K
TSCD143KCU6
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FMMT614 TYPICAL CHARACTERISTICS 2 2 +25°C I+/I*=1000 1m 75k 10m 100m 1 10 1m 100m 10m 1 IC - Collector Current A IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 2.4 V+-=5V ABSOLUTE MAXIMUM RATINGS.
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FMMT614
500mA
500mA,
100mA,
100mHz
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603 transistor npn
Abstract: ozone sensor GSA-603 GSA-601S NPN TRANSISTOR "NPN Transistor" 603 transistor ozone transistor 603 010PPM
Text: ozone allied products ozone sensor Model Appearance Power supply Output Environment condition for operation Storage temperature range Detection concentration Dimensions GSA-601S DC 5V NPN transistor open-collector output Tr1 : on at more than a preset value Max 150mA
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GSA-601S
150mA)
GSA-603
150mA
10ppm
603 transistor npn
ozone sensor
GSA-603
GSA-601S
NPN TRANSISTOR
"NPN Transistor"
603 transistor
ozone
transistor 603
010PPM
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laser LED
Abstract: ZTX413 AVALANCHE TRANSISTOR edge emitter LED LED driver 110V DSA003766 avalanche mode transistor
Text: NPN SILICON PLANAR AVALANCHE TRANSISTOR ZTX413 ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Emitter Inductance Le Transition Frequency Collector-Base Capacitance MIN. TYP. MAX. UNIT CONDITIONS. 6 nH With 3mm leads fT 150 MHz IC=10mA, VCE=5V f=20MHz Ccb 2 pF
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ZTX413
20MHz
10KHz
laser LED
ZTX413
AVALANCHE TRANSISTOR
edge emitter LED
LED driver 110V
DSA003766
avalanche mode transistor
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mps3569
Abstract: ebc Transistor
Text: CRO DESCRIPTION MPS3569 NPN SILICON TRANSISTOR TO-92A MPS3569 is NPN silicon plapar epitaxial transistor designed for AF medium power amplifiers. EBC ABSOLUTE MAXIMUM RATINGS 80V 40V 5V 1A 625mW -55 to +150°C V cbo VcEO V ebo Collector-Base Voltage Collector-Emitter Voltage
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MPS3569
MPS3569
O-92A
625mW
150mA
150mA
Oct-96
300uS,
ebc Transistor
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2N3417
Abstract: NPN transistor ECB TO-92 transistor BO 540
Text: TO-92 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VE BO 5V Collector Current IC Total Power Dissipation
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2N3417
2M3417
500mA
NPN transistor ECB TO-92
transistor BO 540
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2SA1680
Abstract: 2SC4408 transistor 2SA1680
Text: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)
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2SC4408
2SA1680
900mW
500ns
75MAX.
2SC4408
transistor 2SA1680
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2SA1680
Abstract: 2SC4408
Text: TO SH IBA 2SC4408 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4408 Unit in mm POWER AMPLIFIER APPLICATIONS 5.1 MAX. POWER SWITCHING APPLICATIONS • • • • Low Collector Saturation Voltage v CE(sat) = °-5V (Max.) High Collector Power Dissipation PC = 900mW (Ta = 25°C)
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2SC4408
2SA1680
900mW
500ns
75MAX
2SC4408
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2SC2373
Abstract: m0spec
Text: ÆàMOSPEC NPN SILICON POWER TRANSISTORS NPN .specifically designed for use in horizontal deflection output for BAA/ TV applications 2SC2373 FEATURES: * Low Collector-Emitter Saturation Voltage 7.5 AMPERE SILICON POWER TRANASISTORS 100 VOLTS 40 WATTS VCE satf 1-5V(Max @ Ic=5 0A,Ib=0.5A
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2SC2373
m0spec
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B904
Abstract: D1213 2SB904 D152 2SD121
Text: Ordering number ¡EN1022A 2SB 904/2SD 1213 PNP/NPN Epitaxial Planar Silicon Transistors 30V/20A High-Speed Switching Applications Use • Large current switching of relay drivers, high-speed inverters, converters Features • Low collector-to-emitter saturation voltage: VcE sat =~0-5V{PNP), 0.4(NPN) max.
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eN1022A
2SB904/2SD1213
0V/20A
2SB904
B904
D1213
2SB904
D152
2SD121
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BU806
Abstract: CO530 BU807 "Darlington Transistor" npn darlington transistor 200 watts
Text: FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA
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BU807
BU806
BU806
BU807
CO530
"Darlington Transistor"
npn darlington transistor 200 watts
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2-5K1A
Abstract: 2-5K1A toshiba 2SA1681 2SC4409 toshiba Transistor Silicon pct toshiba marking 12w
Text: TO SHIBA 2SC4409 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS. 1.6 MAX. 4.6 MAX. 1.7MAX. Low Collector Saturation Voltage : VCE (sat)“ °-5V (Max.) (at Ie = lA)
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2SC4409
500ns
2SA1681
SC-62
2-5K1A
2-5K1A toshiba
2SA1681
2SC4409
toshiba Transistor Silicon pct
toshiba
marking 12w
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2SB919
Abstract: jo16 2SD123
Text: Ordering number: EN1046B 2S B 919/2S D 1235 PNP/NPN Epitaxial Planar Silicon Transistors 30V/8A High-Speed Switching Applications Use Large current switching o f relay drivers, high-speed inverters, converters Features • • Low collector-to-em itter saturation voltage: V cE sa t = _ '0 .5V(PNP), 0.4(NPN) max.
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EN1046B
l046B
2SB919/2SD1235
2SB919
2SB919
jo16
2SD123
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4409 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4409 Unit in mm ra POWER SWITCHING APPLICATIONS. 1.6MAX. 1.7MAX. • • • • • Low Collector Saturation Voltage : v CE(sat) = °-5V (Max.) (at Ic = lA)
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2SC4409
500ns
2SA1681
SC-62
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2sc5029
Abstract: No abstract text available
Text: TOSHIBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat) = °-5V (Max.) • High Collector Power Dissipation : P 0 = 1.3W (Ta = 25°C)
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2SC5029
2SA1892
2sc5029
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4604 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATIONS. • SILICON NPN EPITAXIAL TYPE 2SC4604 Unit in mm 5.1 MAX Low Collector-Emitter Saturation Voltage : v CE sat = °-5V (max.) (Ic = 1.5A) High Speed Switching : tstg = 0.5/*s (Typ.)
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2SC4604
2SA1761
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BU806
Abstract: BU807 CO530
Text: ÜàMOSPEC FAST SWITCHING DARLINGTON TRANSISTOR NPN They are high voltage,high current devices for fast switching applications. BU806 BU807 FEATURES: * Collector-Emitter Sustaining Voltage 1 5 0 V M i n -BU807 = 200 V (Min.) -BU806 * Low Collector-Emitter Saturation Voltage V C E ( S a t ) = 1-5V (Max.) @ lc = 5.0 A, lB = 50 mA
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BU807
BU806
BU806
BU807
CO530
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BVCE0-20V
Abstract: No abstract text available
Text: MICRO BC368,9 I K ‘ At. 'R. TO-92B BC 368 NPN and BC 369 (PNP) are complementary silicon epitaxial transistors for audio frequency application. ABSOLUTE MAXIMUM RATINGS ECB Collector Current-Continuous 1A CEO 20V Emitter-Base Voltage VEBO 5V Total Power Dissipation
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O-92B
500mA
20MHz
300jiS,
BVCE0-20V
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2SA1721
Abstract: 2SC4497
Text: TO SH IBA 2SC4497 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC4497 Unit in mm HIGH VOLTAGE CONTROL APPLICATIONS + 0.5 2.5-0.3 + 0.25 High Voltage : Vcbq-SOOV, V0e q = 3OOV Low Saturation Voltage : Vq ^ (sat) —0-5V (Max.) Small Collector Output Capacitance
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2SC4497
2SA1721
O-236Mtruments,
2SA1721
2SC4497
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2SA1892
Abstract: 2SC5029
Text: TO SH IBA 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 Unit in mm POWER SWITCHING APPLICATIONS • • • • Low Saturation Voltage • VCE (sat) = °-5V (Max-) High Collector Power Dissipation : Pç; = 1.3W (Ta = 25°C)
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2SC5029
2SA1892
2SA1892
2SC5029
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