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    D0-202AA

    Abstract: No abstract text available
    Text: Microsemi Corp. f The d*xte experts SANTA ANA, CA SCOTTSDALE, AZ / For more information call: 682 941-6300 FEATURES 1N5555 1N5556 1N5557 1N5558 TRANSIENT ABSORPTION • PROTECTS CIRCUITS FROM HARMFUL TRANSIENTS • ABSORBS TRANSIENTS UP TO 1500 WATTS FOR IM S


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    PDF 1N5555 1N5556 1N5557 1N5558 DO-13 MIL-S-19500/500 D0-202AA

    x538

    Abstract: MAX531BESD T variable resistor 727M
    Text: 1 9 -01 72 : R ev 5 :1 0 /9 6 5V, Low-Power, Voltage-Output, Serial 12-Bit DACs T he M A X 538’s b u ffe r is fixed at a gain of 1 and the M AX539's bu ffer at a gain of 2. The M AX531’s internal op am p m ay be configured for a gain of 1 or 2, as well


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    PDF 12-Bit MAX531/MAX538/MAX539 MAX531 AX538/M AX539 140pA, MAX531 MAX538/MAX539 x538 MAX531BESD T variable resistor 727M

    Untitled

    Abstract: No abstract text available
    Text: SbE D 3D 3 D b 0 q Ü G G 1 S 1 7 13fl * V C T GaAIAs Infrared Emitting Diodes V T E 1 1 6 3 , 66, 68 TO-46 Lensed Package — 880 nm T-41-I3 E G 8. G VACTE C PACKAGE DIMENSIONS inch mm til CASE 24 DESCRIPTION TO-46 HERMETIC (LENSED) CHIP SIZE:.01 S 'x .01 S'


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    PDF T-41-I3 Coe11icient VTE1163 VTE1166 VTE1168