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    CLT590 Search Results

    CLT590 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CLT590 Senisys Silicon Planar Phototransistor Scan PDF

    CLT590 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c1247

    Abstract: CLT590
    Text: FASCO INDS/ SENISYS 40E D 34^730 00G1274 5 E3SENI i n m ni CLT590 Silicon Planar Phototransistors 0.186 C4.723 0.176 C4.473 c D IM EN SIO N S A R E IN IN C H E S C M IL L IM E T E R S i RADIANT SENSITIVE AREA -SURrACE NE3T TLAT 0.202 C5.131 0.192 4.86


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    PDF 00G1274 CLT590 T-13/Â CLT590B CLT590A 880nm. c1247 CLT590

    Untitled

    Abstract: No abstract text available
    Text: FASCO INKS/ SENISYS 40E D B 341=1736 000131b b B S E N I CLED191 Series_ Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100°C


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    PDF 000131b CLED191

    Untitled

    Abstract: No abstract text available
    Text: FASCO INDS/ SENISYS 40E 3> m 34T=i73a 0001316 T El SEN! CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature .to + 100°G


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    PDF CLED291 T-13/ 100mA,

    c3781

    Abstract: CLED191A CLED191B CLED191C CLT590 L004 2s43
    Text: * FASCO INDS/ SE N I S Y S 34^730 40E D 000131b hr^SENI IEEEQI3B CLED191 Series m -U Gallium Arsenide Infrared Emitting Diodes Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature. -40°C to +100°C


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    PDF CLED191 000131b T-13/4 c3781 CLED191A CLED191B CLED191C CLT590 L004 2s43

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


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    PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    TIL149

    Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
    Text: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55


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    PDF GQ133Ã CLA60. C-101-C CLA60AA C-101-B CLA60AB C-101-A CLA65. C-102 CLA65AA TIL149 HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W

    CLED291A

    Abstract: CLED291B CLED291C
    Text: 40E 3> FASCO INDS/ SENISYS SMTiTBâ 000131Ö t • I SENI ICEEESai CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. 880 nm wavelength T-13/< package wide radiation angla


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    PDF CLED291 T-13A< If-20mA 100mA, CLED291A CLED291B CLED291C

    Untitled

    Abstract: No abstract text available
    Text: FASCO INDS/ SENISYS 40E D 34eH73fl 0001274 5 E3SENI Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100*0


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    PDF H73fl CLT590A CLT590B