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    Untitled

    Abstract: No abstract text available
    Text: Am2817A 2048 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-Volt-only operation Wrlte-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication • • Self-timed write cycle with on-chip latches


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    PDF Am2817A 10-year Am9864 6891A) 384-bit MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)


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    PDF Am27S35/Am27S37 192-Bit 1024x8) 24-pin, 300-mil Am27S35 Am27S37

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current


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    PDF 32-Pin 28F010

    PLL IC 566

    Abstract: application of IC 566 function generator ne 565 pll Resistor Fuse 4.91 pll 565 application PLL 567 am2971
    Text: Am2971 Programmable Event Generator PEG Am2971 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Twelve programmable, registered output waveforms Programmable event intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im­ proved timing accuracy


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    PDF Am2971 Am2971 KS000010 WF022521 WF022530 PF001081 PLL IC 566 application of IC 566 function generator ne 565 pll Resistor Fuse 4.91 pll 565 application PLL 567

    dk qs

    Abstract: CLTO20
    Text: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,


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    PDF Am27S31 512-words MIL-STD-883, dk qs CLTO20

    27S181

    Abstract: Am27S181/27S181
    Text: A m a 2 7 S 1 8 1 /2 7 S 1 8 1 A A m 2 7 S 2 8 1 Advanced Micro Devices /2 7 S 2 8 1 A 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction


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    PDF 192-Bit 1024x8) Am27S101 Am27S181/27S181 27S281/27S281A TC003452 Am27S181 /27S181A Am27S281/27S281 27S181

    28F020A

    Abstract: 28F020T
    Text: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current


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    PDF Am28F020A 32-Pin 28F020A 28F020A 28F020T

    AMD 28F512

    Abstract: No abstract text available
    Text: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current


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    PDF Am28F512 32-pin 28F512 AMD 28F512

    TS21C

    Abstract: am2971
    Text: Am 2971 Programmable Event Generator PEG PRELIM INARY Distinctive Characteristics • • • • Twelve programmable, registered output waveforms Programmable event Intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im­ proved timing accuracy


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    PDF Am2971 WF022530 PF001081 IC000881 TS21C

    am2664be

    Abstract: rvb ah
    Text: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write


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    PDF Am2864BE 32-byte 10-year Am2664BE 536-bit WF025172 rvb ah

    Amd 5000 pin diagram

    Abstract: No abstract text available
    Text: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention


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    PDF Am99C88/Am99CL88 Am99C88 Am99CL88 28-pin MIL-STD-883, Amd 5000 pin diagram

    VM7204

    Abstract: AM7204A PDW028
    Text: a Am7204A Advanced Micro Devices High Density First-In First-Out FIFO 4096 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ ■ RAM based FIFO 4096 x 9 organization Cycle times of 25/35/45/65 ns for standard products Cycle times of 40/65 ns for APL products


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    PDF Am7204A 14430C-20 VM7204 PDW028

    AM27S35

    Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
    Text: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard


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    PDF Am27S35/S35A/Am27S37/S37A 192-Bit 1024x8) 24-pin, 300-mil Am27S35 Am27S37 WF021580 AM27S35A CD3024 PD3024 1024x8 PROM

    Untitled

    Abstract: No abstract text available
    Text: a Am28F020 262,144 x 8-Bit CMOS Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption - 30 mA maximum active current -1 0 0 iA maximum standby current - No data retention power


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    PDF Am28F020 32-Pin -32-pin

    2817a

    Abstract: MIL-STD-663
    Text: Am2817 A 2048 x 8-B it E lectrically Erasable PROM • • 5-Volt-only operation Write-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication Self-timed write cycle with on-chip latches Minimum endurance of 10,000 write cycles per byte with


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    PDF Am2817A 10-year Am9864 384-bit MIL-STD-883, 2817a MIL-STD-663

    27S45

    Abstract: 27S47A AM27S45A AM27S45 27S45A AM27S47A am27s47 27S45SA 27s47 AM27S45SA
    Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA AdJfed 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input Micro vices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 10 ns clock-to-output delay


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    PDF 27S45/27S45 /27S45S Am27S47/27S47A/27S47SA 384-Bit 2048x8) 24-pin, 300-mil Am27S45 Am27S47 Am27S45/27S45A/27S45SA 27S45 27S47A AM27S45A 27S45A AM27S47A 27S45SA 27s47 AM27S45SA

    27s31

    Abstract: No abstract text available
    Text: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide


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    PDF Am27S31 /27S31A 512x8) Am27S31/27S31 Am27S31/27S31A 27s31

    Untitled

    Abstract: No abstract text available
    Text: Am99C88/Am99CL88 8 Kx 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access times 70/100/120/150 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max. Standby: 550 /jW Max.


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    PDF Am99C88/Am99CL88 Am99C88 Am99CL88 28-pin MIL-STD-883,

    AM27S45A

    Abstract: AM27S45s
    Text: Am27S45/Am27S47 Am27S45/Am27S47 16,384-Bit 2 0 4 8 x 8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay* Slim, 24-pin, 300-mil lateral center package occupies


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    PDF Am27S45/Am27S47 384-Bit 24-pin, 300-mil Am27S45 Am27S47 MIL-STD-883, AM27S45A AM27S45s

    27S43A

    Abstract: CD 024 27S43 KS000010
    Text: Am27S43/27S43A Advanced Micro Devices 32,768-Bit 4096x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time Voltage and temperature compensated providing ex­ tremely flat AC performance over military range Platinum-Silicide fuses guarantee high reliability, fast


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    PDF Am27S43/27S43A 768-Bit 4096x8) Am27S43 BD006310 KS000010 27S43A CD 024 27S43 KS000010

    AM99C328-70

    Abstract: No abstract text available
    Text: ADV M I C R O { M E M O R Y } fiA 0257528 ADV M IC R O ]>Ë 0 2 5 7 5 2 0 0 D 2 M 7 7 b G iM EM O RY Am99C328 88D r 24776 T -4 6 - 2 3 - 1 4 32,768 x 8 Static R /W Random-Access Memory PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Fast access time — 3 5 /4 5 /5 5 /7 0 ns Maximum


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    PDF Am99C328 28-pin, 32-pin ---------------------------------WF021812 07430B CLR032 AM99C328-70

    AM27S45

    Abstract: 27s47 am27s47 AM27S45A am27s47a 27S45 27S47A 27S45A AM27S45s Am27S47/27S47A
    Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA 7J Advanced 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input D Micro evices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay


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    PDF Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA 384-Bit 2048x8) 24-pin, 300-mil Am27S45 Am27S47 27s47 AM27S45A am27s47a 27S45 27S47A 27S45A AM27S45s Am27S47/27S47A

    Untitled

    Abstract: No abstract text available
    Text: -» A /* i. « Advanced Micro High Density First-In First-Out FIFO 4096x9-Bit CMOS Memory Devices a Am7204A DISTINCTIVE CHARACTERISTICS • ■ RAM based FIFO 4096x9 organization Low power consumption Status flags - full, half-full, empty ■ Cycle times of 25/35/45/65 nanoseconds for


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    PDF 4096x9-Bit Am7204A 4096x9 4430-016A

    Untitled

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am7203A High Density First-in First-Out FIFO 2048x9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO ■ Low power consumption ■ 2048x9 organization ■ Status flags - full, half-full, empty ■ Cycle times of 25/35/45/65 nanoseconds for


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    PDF Am7203A 2048x9-Bit 2048x9 4430-016A