Untitled
Abstract: No abstract text available
Text: Am2817A 2048 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • 5-Volt-only operation Wrlte-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication • • Self-timed write cycle with on-chip latches
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Am2817A
10-year
Am9864
6891A)
384-bit
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)
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Am27S35/Am27S37
192-Bit
1024x8)
24-pin,
300-mil
Am27S35
Am27S37
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices A m 2 8 F 0 1 0 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS I High perform ance - 90 ns m aximum access tim e Latch-up protected to 100 mA from -1 V to Vcc +1 V • CM OS Low pow er consum ption - 30 m A m aximum active current
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32-Pin
28F010
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PLL IC 566
Abstract: application of IC 566 function generator ne 565 pll Resistor Fuse 4.91 pll 565 application PLL 567 am2971
Text: Am2971 Programmable Event Generator PEG Am2971 PRELIMINARY DISTINCTIVE CHARACTERISTICS • • • • Twelve programmable, registered output waveforms Programmable event intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im proved timing accuracy
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Am2971
Am2971
KS000010
WF022521
WF022530
PF001081
PLL IC 566
application of IC 566 function generator
ne 565 pll
Resistor Fuse 4.91
pll 565 application
PLL 567
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dk qs
Abstract: CLTO20
Text: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,
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Am27S31
512-words
MIL-STD-883,
dk qs
CLTO20
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27S181
Abstract: Am27S181/27S181
Text: A m a 2 7 S 1 8 1 /2 7 S 1 8 1 A A m 2 7 S 2 8 1 Advanced Micro Devices /2 7 S 2 8 1 A 8,192-Bit 1024x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Fast access time allows high system speed 50% power savings on deselected parts — enhances reliability through total system heat reduction
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192-Bit
1024x8)
Am27S101
Am27S181/27S181
27S281/27S281A
TC003452
Am27S181
/27S181A
Am27S281/27S281
27S181
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28F020A
Abstract: 28F020T
Text: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current
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Am28F020A
32-Pin
28F020A
28F020A
28F020T
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AMD 28F512
Abstract: No abstract text available
Text: a F IN A L Advanced Micro Devices Am28F512 65,536 X 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance - 70 ns m aximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Low power consum ption - 30 m A m aximum active current
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Am28F512
32-pin
28F512
AMD 28F512
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TS21C
Abstract: am2971
Text: Am 2971 Programmable Event Generator PEG PRELIM INARY Distinctive Characteristics • • • • Twelve programmable, registered output waveforms Programmable event Intervals down to 10 ns Multiplying phase-locked-loop (PLL) oscillator for im proved timing accuracy
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Am2971
WF022530
PF001081
IC000881
TS21C
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am2664be
Abstract: rvb ah
Text: Am2864BE Advanced Micro Devices 8192 x 8-Bit Electrically Erasable PROM DISTINCTIVE CHARACTERISTICS • • • • 5-V only operation Military temperature range available Self-timed Write Cycle with on-chip latches R eady/Busy pin and Data Polling for end-of-write
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Am2864BE
32-byte
10-year
Am2664BE
536-bit
WF025172
rvb ah
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Amd 5000 pin diagram
Abstract: No abstract text available
Text: Am99C88/Am99CL88 DISTINCTIVE CHARACTERISTICS • • High speed - a c c e s s tim es 7 0/1 0 0 /1 2 0 /1 5 0 ns Low-power requirements: - A m 99C88 Operating: 330 mW M ax. Standy: 16.5 mW Max. - Am 99C L88 Operating: 220 mW Max. Standby: 550 /j W Max. Battery backed-up operation 2 V data retention
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Am99C88/Am99CL88
Am99C88
Am99CL88
28-pin
MIL-STD-883,
Amd 5000 pin diagram
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VM7204
Abstract: AM7204A PDW028
Text: a Am7204A Advanced Micro Devices High Density First-In First-Out FIFO 4096 x 9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ ■ RAM based FIFO 4096 x 9 organization Cycle times of 25/35/45/65 ns for standard products Cycle times of 40/65 ns for APL products
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Am7204A
14430C-20
VM7204
PDW028
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AM27S35
Abstract: AM27S35A CD3024 PD3024 1024x8 PROM
Text: Am27S35/S35A/Am27S37/S37A _ „ Advanced Micro Devices 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS • • Slim, 24-pin, 300-mil lateral center package occupies approximately 1/3 the board space required by standard
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Am27S35/S35A/Am27S37/S37A
192-Bit
1024x8)
24-pin,
300-mil
Am27S35
Am27S37
WF021580
AM27S35A
CD3024
PD3024
1024x8 PROM
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Untitled
Abstract: No abstract text available
Text: a Am28F020 262,144 x 8-Bit CMOS Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption - 30 mA maximum active current -1 0 0 iA maximum standby current - No data retention power
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Am28F020
32-Pin
-32-pin
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2817a
Abstract: MIL-STD-663
Text: Am2817 A 2048 x 8-B it E lectrically Erasable PROM • • 5-Volt-only operation Write-protect circuitry to preserve data on power up and power down Ready/Busy pin for end-of-write indication Self-timed write cycle with on-chip latches Minimum endurance of 10,000 write cycles per byte with
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Am2817A
10-year
Am9864
384-bit
MIL-STD-883,
2817a
MIL-STD-663
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27S45
Abstract: 27S47A AM27S45A AM27S45 27S45A AM27S47A am27s47 27S45SA 27s47 AM27S45SA
Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA AdJfed 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input Micro vices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 10 ns clock-to-output delay
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27S45/27S45
/27S45S
Am27S47/27S47A/27S47SA
384-Bit
2048x8)
24-pin,
300-mil
Am27S45
Am27S47
Am27S45/27S45A/27S45SA
27S45
27S47A
AM27S45A
27S45A
AM27S47A
27S45SA
27s47
AM27S45SA
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27s31
Abstract: No abstract text available
Text: a Am27S31 /27S31A Advanced Micro Devices 512x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Low High Fast High speed — 35 ns max commercial range access time Excellent performance over full military and commercial ranges Highly reliable, ultra-fast programming Platinum-Silicide
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Am27S31
/27S31A
512x8)
Am27S31/27S31
Am27S31/27S31A
27s31
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Untitled
Abstract: No abstract text available
Text: Am99C88/Am99CL88 8 Kx 8 CMOS Static Random-Access Memory DISTINCTIVE CHARACTERISTICS • • High speed - access times 70/100/120/150 ns Low-power requirements: - Am99C88 Operating: 330 mW Max. Standy: 16.5 mW Max. - Am99CL88 Operating: 220 mW Max. Standby: 550 /jW Max.
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Am99C88/Am99CL88
Am99C88
Am99CL88
28-pin
MIL-STD-883,
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AM27S45A
Abstract: AM27S45s
Text: Am27S45/Am27S47 Am27S45/Am27S47 16,384-Bit 2 0 4 8 x 8 Bipolar Registered PROM with Programmable INITIALIZE Input DISTINCTIVE CHARACTERISTICS "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay* Slim, 24-pin, 300-mil lateral center package occupies
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Am27S45/Am27S47
384-Bit
24-pin,
300-mil
Am27S45
Am27S47
MIL-STD-883,
AM27S45A
AM27S45s
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27S43A
Abstract: CD 024 27S43 KS000010
Text: Am27S43/27S43A Advanced Micro Devices 32,768-Bit 4096x8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • Ultra-fast access time Voltage and temperature compensated providing ex tremely flat AC performance over military range Platinum-Silicide fuses guarantee high reliability, fast
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Am27S43/27S43A
768-Bit
4096x8)
Am27S43
BD006310
KS000010
27S43A
CD 024
27S43
KS000010
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AM99C328-70
Abstract: No abstract text available
Text: ADV M I C R O { M E M O R Y } fiA 0257528 ADV M IC R O ]>Ë 0 2 5 7 5 2 0 0 D 2 M 7 7 b G iM EM O RY Am99C328 88D r 24776 T -4 6 - 2 3 - 1 4 32,768 x 8 Static R /W Random-Access Memory PRELIMINARY > 3 DISTINCTIVE CHARACTERISTICS Fast access time — 3 5 /4 5 /5 5 /7 0 ns Maximum
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Am99C328
28-pin,
32-pin
---------------------------------WF021812
07430B
CLR032
AM99C328-70
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AM27S45
Abstract: 27s47 am27s47 AM27S45A am27s47a 27S45 27S47A 27S45A AM27S45s Am27S47/27S47A
Text: Am27S45/27S45A/27S45SA Am27S47/27S47A/27S47SA 7J Advanced 16,384-Bit 2048x8 Bipolar Registered PROM with Programmable INITIALIZE Input D Micro evices DISTINCTIVE CHARACTERISTICS • • • "S A " version offers superior performance with 25 ns setup time and 1 0 ns clock-to-output delay
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Am27S45/27S45A/27S45SA
Am27S47/27S47A/27S47SA
384-Bit
2048x8)
24-pin,
300-mil
Am27S45
Am27S47
27s47
AM27S45A
am27s47a
27S45
27S47A
27S45A
AM27S45s
Am27S47/27S47A
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Untitled
Abstract: No abstract text available
Text: -» A /* i. « Advanced Micro High Density First-In First-Out FIFO 4096x9-Bit CMOS Memory Devices a Am7204A DISTINCTIVE CHARACTERISTICS • ■ RAM based FIFO 4096x9 organization Low power consumption Status flags - full, half-full, empty ■ Cycle times of 25/35/45/65 nanoseconds for
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4096x9-Bit
Am7204A
4096x9
4430-016A
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Untitled
Abstract: No abstract text available
Text: Advanced Micro Devices Am7203A High Density First-in First-Out FIFO 2048x9-Bit CMOS Memory DISTINCTIVE CHARACTERISTICS • RAM based FIFO ■ Low power consumption ■ 2048x9 organization ■ Status flags - full, half-full, empty ■ Cycle times of 25/35/45/65 nanoseconds for
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Am7203A
2048x9-Bit
2048x9
4430-016A
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