CLI600
Abstract: CLI610
Text: CLI600 CLI610 Optical Switches GENERAL DESCRIPTION These optical sw itches couple an infrared light em itting diode and a silicon photodetector. The detec tor in the CLI610 is an N PN phototransistor. The CLI600 has a photodarlington providing higher sen
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CLI600
CLI610
CLI610
100mw,
33mw/Â
IF-20MA
CLI600
TA-25
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asco
Abstract: CLI600 CLI610 TA23C
Text: 4GE D El aLí'íTTBñ QQOIQ^S F ASCO INDS/ S ^SENI SENISYS " ^ 4 ^ 2 CLI600 CLI610 Optical Switches GENERAL DESCRIPTION These optical switches couple an infrared light emitting diode and a silicon photodetector. The detec tor in the CLI610 is an NPN phototransistor. The
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CLI600
CLI610
CLI610
100mw,
33mw/Â
IF-20MA
CLI600
asco
TA23C
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Untitled
Abstract: No abstract text available
Text: 40E D rea 314«=jc]7 3 a OQOIO^S S m S E N l FASCO INDS/ SENISVS CLI600 CLI610 Optical Switches GENERAL DESCRIPTION These optical switches couple an infrared light emitting diode and a silicon photodetector. The detec tor in the CLI610 is an NPN phototransistor. The
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CLI600
CLI610
CLI610
CLI600
150mw,
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Untitled
Abstract: No abstract text available
Text: CLI600 CLI610 Optical Switches GENERAL DESCRIPTION These optical switches couple an infrared light emitting diode and a silicon photodetector. The detec tor in the CLI610 is an NPN phototransistor. The CLI600 has a photodarlington providing higher sen
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CLI600
CLI610
CLI610
CLI600
150mw,
100mw,
33mw/Â
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CLI600
Abstract: CLI610 phototransistor K-T
Text: CLAIREX ELECTRONICS DIV 5 1 4 2 7 ^ QQDQÔ4Ô ñ D T -m -n 3 CLI600 CLI610 Optical Switches GENERAL DESCRIPTION These optical switches couple an infrared light emitting diode and a silicon photodetector. The detec tor in the CLI610 is an NPN phototransistor. The
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21427T1
CLI600
CLI610
CLI610
100mw,
33mw/Â
CLI600
phototransistor K-T
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Untitled
Abstract: No abstract text available
Text: FASCO INDS/ SENISYS Optical Switches BMTTTSfl DDDIOT^ S » S E N I 4DE D i CLI800W CLI810W CLI820W CLI830W CLI835W t i GENERAL DESCRIPTION — This optical switch couples a gallium arsenide infrared emitting diode and a silicon phototransistor for a range of guaranteed minimum sensor
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CLI800W
CLI810W
CLI820W
CLI830W
CLI835W
CU835W
33mw/â
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