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    CHIP DIODE AGILENT Search Results

    CHIP DIODE AGILENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    CHIP DIODE AGILENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Linear Models for Diode Surface Mount Packages Application Note 1124 Introduction When linear or non-linear analyses are performed on diode circuits, both the diode chip and its package must be accurately modeled. The diode chip or die itself may be modeled using SPICE parameters,


    Original     		PDF OT-23 OT323 OT-23 OT-323 OT-323 OT-143 OT-143 OT-363 OT-363

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: HSCH-9401 all diode List Die Attach and Bonding Guidelines PN diode specifications
    Text: Agilent HSCH-9401 GaAs Schottky Diode Data Sheet Features • fC >800 GHz • Low junction capacitance – typically 35 fF • Low series resistance – typically 6Ω Chip Size: Chip Size Tolerance: Chip Thickness: Chip Thickness Tol: Bond Pad Sizes: 610 x 255 µm 24 x 10 mils


    Original     		PDF HSCH-9401 HSCH-9401 5968-4416E 5988-6154EN GaAs MMIC ESD, Die Attach and Bonding Guidelines all diode List Die Attach and Bonding Guidelines PN diode specifications

    Die Attach and Bonding Guidelines

    Abstract: schottky diode application chip diode agilent HSCH-9401
    Text: Agilent HSCH-9401 GaAs Schottky Diode Data Sheet Features Chip Size: 610 x 255 µm 24 × 10 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 µm (4 mils) Chip Thickness Tolerance:± 15 µm (± 0.6 mils) Bond Pad Sizes: 175 × 175 µm (6.9 × 6.9 mils)


    Original     		PDF HSCH-9401 HSCH-9401 HSCH-9401/rev Die Attach and Bonding Guidelines schottky diode application chip diode agilent

    1gc1-8053

    Abstract: MMIC limiter 1gc1 tc231 GaAs MMIC ESD, Die Attach and Bonding Guidelines
    Text: Agilent 1GC1-8053 0–65 GHz Integrated Diode Limiter TC231 Data Sheet Features • Two Independent Limiters for Single–ended or Differential Signals • Can be Biased for Adjustable Limit Level and Signal Detection • Minimum Group Delay Chip Size: Chip Size Tolerance:


    Original     		PDF 1GC1-8053 TC231 TC231 00E-03 00E-04 00E-05 00E-06 1gc1-8053 MMIC limiter 1gc1 GaAs MMIC ESD, Die Attach and Bonding Guidelines

    ESD200-B1-CSP0201

    Abstract: OmniVision m
    Text: TVS Diode Transient Voltage Suppressor Diodes ESD200-B1-CSP0201 Low Clamping Voltage TVS Diode in a Thin 0201 Chip Scale Package ESD200-B1-CSP0201 Data Sheet Revision 1.0, 2013-05-21 Final Power Management & Multimarket Edition 2013-05-21 Published by Infineon Technologies AG


    Original     		PDF ESD200-B1-CSP0201 AN210: ESD200-B1-CSP0201 OmniVision m

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: diode 716 Die Attach and Bonding Guidelines HSCH-9201 HSCH-9501 chip diode agilent HSCH9201
    Text: Agilent HSCH-9501 GaAs Schottky Diode Series Pair Tee Data Sheet Features • Low Junction Capacitance – typically 40 fF • Low Series Resistance – typically 3 Ω • Large bond pads suitable for automated wire-bonding or flip-chip assembly • Polyimide scratch protection


    Original     		PDF HSCH-9501 HSCH-9501 HSCH-9201 Assemb850 HSCH-9501/rev GaAs MMIC ESD, Die Attach and Bonding Guidelines diode 716 Die Attach and Bonding Guidelines chip diode agilent HSCH9201

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: HSCH-9551 GaAs Schottky HSCH-9551 Equivalent KY Series HSCH-9251 Die Attach and Bonding Guidelines 9551
    Text: Agilent HSCH-9551 GaAs Schottky Diode Antiparallel Pair Data Sheet Features • Low Junction Capacitance – typically 40 fF • Low Series Resistance – typically 3 Ω • Large bond pads suitable for automated wire-bonding or flip-chip assembly • Polyimide scratch protection


    Original     		PDF HSCH-9551 HSCH-9551 HSCH-9251 GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs Schottky HSCH-9551 Equivalent KY Series Die Attach and Bonding Guidelines 9551

    Untitled

    Abstract: No abstract text available
    Text: CF5074B VCXO Module IC with Built-in Varicap OVERVIEW The CF5074B is VCXO module IC with built-in varicap diodes. The integrated varicap diode BiCMOS process allows the device to be fabricated on a single chip. A newly developed oscillator circuit features reduced


    Original     		PDF CF5074B CF5074B 50MHz 80MHz Tokyoi104-0032 iC81-3-5541-6501 iC81-3-5541-6510 NC0716AE

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diode Series Pair Tee Technical Data HSCH-9501 Features • Low Junction Capacitance— typically 40 fF • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection


    Original     		PDF HSCH-9501 HSCH-9501 HSCH-9201 5968-4223E

    diode dd 402 109

    Abstract: CF5074B HP4194A HP4194
    Text: CF5074B VCXO Module IC with Built-in Varicap OVERVIEW The CF5074B is VCXO module IC with built-in varicap diodes. The integrated varicap diode BiCMOS process allows the device to be fabricated on a single chip. A newly developed oscillator circuit features reduced


    Original     		PDF CF5074B CF5074B 50MHz 80MHz NC0716AE diode dd 402 109 HP4194A HP4194

    5074

    Abstract: VCXO
    Text: CF5074B VCXO Module IC with Built-in Varicap OVERVIEW The CF5074B is VCXO module IC with built-in varicap diodes. The integrated varicap diode BiCMOS process allows the device to be fabricated on a single chip. A newly developed oscillator circuit features reduced


    Original     		PDF CF5074B CF5074B 50MHz 80MHz NC0716AE 5074 VCXO

    Untitled

    Abstract: No abstract text available
    Text: GaAs Schottky Diode Antiparallel Pair Technical Data HSCH-9551 Features • Low Junction Capacitance— typically 40 fF • Low Series Resistance— typically 3 Ω • Large Bond Pads Suitable for Wire-bond or Flip-chip Assembly • Polyimide Scratch Protection


    Original     		PDF HSCH-9551 HSCH-9551 HSCH-9251 5968-4222E

    PIN diode ADS model

    Abstract: PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860
    Text: HMPP-3865 MiniPAK PIN Diode High Isolation SPDT Switch Design for 1.9 GHz and 2.45 GHz Applications Application Note 1330 Introduction The Agilent HMPP-3865 parallel diode pair combines low inductance, low capacitance and low package parasitics, increasing


    Original     		PDF HMPP-3865 5988-8470EN PIN diode ADS model PIN attenuator ADS model ll110 simulation ads advanced design system ADS 10 diode diode ADS model TOKO INDUCTORS PIN diode SPICE model HMPP-3860

    AN1124

    Abstract: diode Marking code t5 HSMS-286C HSMS-286x Series
    Text: Agilent HSMS-286x Series Surface Mount Microwave Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages SOT-23/SOT-143 Package Lead Code Identification top view • Miniature SOT-323 and SOT-363 Packages SINGLE 3 SERIES 3


    Original     		PDF HSMS-286x OT-23/ OT-143 OT-323 OT-363 HSMS-286K 5989-0480EN 5989-2495EN HSMS-286x-TR2* AN1124 diode Marking code t5 HSMS-286C HSMS-286x Series

    Voltage Doubler application

    Abstract: voltage doubler Schottky Doubler application of voltage doubler Microwave detector diodes detector diode chip diode agilent 5964-4236E
    Text: Schottky Diode Voltage Doubler Application Note 956-4 Circuit Description Figure 1 shows a simple voltage doubler circuit that was assembled in Agilent Package 60 and tested at 2 GHz. In this version of the doubler, opposite polarity chips are needed. The


    Original     		PDF 5964-4236E Voltage Doubler application voltage doubler Schottky Doubler application of voltage doubler Microwave detector diodes detector diode chip diode agilent 5964-4236E

    pn junction diode ideality factor

    Abstract: 10E7A hsms-270x
    Text: Agilent HSMS-2700, 2702, 270B, 270C High Performance Schottky Diode for Transient Suppression Data Sheet Features • Ultra-low Series Resistance for Higher Current Handling • Picosecond Switching • Low Capacitance Description The HSMS-2700 series of Schottky


    Original     		PDF HSMS-2700, HSMS-2700 HSMS-270x 5989-0473EN 5989-2491EN HSMS-270x-TR2G pn junction diode ideality factor 10E7A

    HBAT540BBLK

    Abstract: No abstract text available
    Text: Agilent HBAT-5400, 5402, 540B, 540C, 540E, 540F High Performance Schottky Diode for Transient Suppression Data Sheet Features • Ultra-low Series Resistance for Higher Current Handling • Low Capacitance • Low Series Resistance Description The HBAT-5400 series of Schottky


    Original     		PDF HBAT-5400, HBAT-5400 HBAT-540x 5989-0472EN 5989-2490EN HBAT-540C-BLK HBAT-540C-TR1 HBAT-540C-TR2 HBAT-540E-BLK HBAT-540E-TR1 HBAT540BBLK

    NN SOT-143

    Abstract: variable power divider
    Text: Agilent HSMS-282x Surface Mount RF Schottky Barrier Diodes Data Sheet Features Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package


    Original     		PDF HSMS-282x OT-363 5989-2503EN 5989-4030EN HSMS-282x-TR2* HSMS-282x-TR1* HSMS-282x-BLK HSMS-282x-TR2G NN SOT-143 variable power divider

    TC221

    Abstract: No abstract text available
    Text: Agilent 1GC1-8038 50 GHz Frequency Doubler TC221 Data Sheet Features • Conversion Efficiency: −12 dB Typical • 1/2 and 3/2 spurs: 15 dBc Typical Chip Size: Chip Size Tolerance: Chip Thickness: 890 x 500 µm 35.0 x 19.7 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)


    Original     		PDF 1GC1-8038 TC221 TC221/rev

    TC221

    Abstract: 1GC1-8038 GaAs MMIC ESD, Die Attach and Bonding Guidelines 8038 CE25 Die Attach and Bonding Guidelines
    Text: Agilent 1GC1-8038 50 GHz Frequency Doubler TC221 Data Sheet Features • Conversion Efficiency: −12 dB Typical • 1/2 and 3/2 spurs: 15 dBc Typical Chip Size: Chip Size Tolerance: Chip Thickness: 890 x 500 µm 35.0 x 19.7 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils)


    Original     		PDF 1GC1-8038 TC221 TC221/rev 1GC1-8038 GaAs MMIC ESD, Die Attach and Bonding Guidelines 8038 CE25 Die Attach and Bonding Guidelines

    HSMS-285x model

    Abstract: P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model
    Text: Agilent HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages Description Important Note: For detector applications with input power levels greater than –20 dBm, use the HSMS-282x series at frequencies


    Original     		PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x configurat25 5989-0479EN 5989-2494EN HSMS-285x model P5 SOT-323 Marking Code m sc70-6 HSMS-286* reliability HSMS-285x spice model

    METAL DETECTOR circuit for make

    Abstract: 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz HSMS-285x marking code nt
    Text: Agilent HSMS-285x Series Surface Mount Zero Bias Schottky Detector Diodes Data Sheet Features • Surface Mount SOT-23/ SOT-143 Packages Description Important Note: For detector applications with input power levels greater than –20 dBm, use the HSMS-282x series at frequencies


    Original     		PDF HSMS-285x OT-23/ OT-143 HSMS-282x HSMS-286x OT-363 SC70-6 5989-2494EN 5989-4022EN METAL DETECTOR circuit for make 915 MHz RFID SCHOTTKY DIODE SOT-143 Microwave detector diodes rf detector diode Microwave PIN diode spice diode MARKING A1 Microwave detector diodes 18 GHz marking code nt

    diode ring mixer

    Abstract: 1gg5 TC676 836 DIODE 1N128 tc6* agilent 1GG5-8045 RF130
    Text: Agilent 1GG5-8045 110 GHz Double Balanced Mixer TC676 Data Sheet Features • Frequency Range: 0–50 GHz LO 0–110 GHz RF 0–100 MHz IF • Conversion Loss: 14 dB typical N=1 28 dB typical N=3 Chip Size: 836 x 977 µm 32.9 x 38.5 mils Chip Size Tolerance: ± 10 µm (±0.4 mils)


    Original     		PDF 1GG5-8045 TC676 TC676 diode ring mixer 1gg5 836 DIODE 1N128 tc6* agilent 1GG5-8045 RF130

    TC724

    Abstract: 1GG7 1GG7-8045 GaAs MMIC ESD, Die Attach and Bonding Guidelines Traveling Wave Amplifier
    Text: Agilent 1GG7-8045 2-26.5 GHz High Power Output Amplifier TC724 Data Sheet Features Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: 2980 x 770 µm 117.3 × 30.3 mils ±10 µm (±0.4 mils) 127 ± 15 µm (5.0 ± 0.6 mils) 75 × 75 µm (2.95 × 2.95 mils), or larger


    Original     		PDF 1GG7-8045 TC724 TC724 Agilent83040 400mA) TC724/rev 1GG7 1GG7-8045 GaAs MMIC ESD, Die Attach and Bonding Guidelines Traveling Wave Amplifier