Infineon Technologies Silicon Tuning Diode
Abstract: BB914 BCW66 MARKING SM
Text: BB914. Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio at low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity for C- V curve • High figure of merit
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BB914.
BB914
Infineon Technologies Silicon Tuning Diode
BB914
BCW66
MARKING SM
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Untitled
Abstract: No abstract text available
Text: BB914. Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio at low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity for C- V curve • High figure of merit
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BB914.
BB914
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Untitled
Abstract: No abstract text available
Text: BB914. Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio at low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity for C- V curve • High figure of merit
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Original
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PDF
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BB914.
BB914
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Infineon Technologies Silicon Tuning Diode
Abstract: No abstract text available
Text: BB914. Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band High tuning ratio at low supply voltage car radio Monolitic chip (common cathode) for perfect dual diode tracking Good linearity for C- V curve High figure of merit
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Original
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PDF
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BB914.
BB914
Dec-04-2002
Infineon Technologies Silicon Tuning Diode
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BB914
Abstract: BCW66
Text: BB914. Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio at low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity for C- V curve • High figure of merit
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Original
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PDF
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BB914.
BB914
BB914
BCW66
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Untitled
Abstract: No abstract text available
Text: BB914. Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band High tuning ratio at low supply voltage car radio Monolitic chip (common cathode) for perfect dual diode tracking Good linearity for C- V curve High figure of merit
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Original
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PDF
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BB914.
BB914
Dec-04-2002
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BB914
Abstract: diode marking DEC
Text: BB914. Silicon Variable Capacitance Diode For FM radio tuner with extended frequency band High tuning ratio at low supply voltage car radio Monolitic chip (common cathode) for perfect dual diode tracking Good linearity for C- V curve High figure of merit
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BB914.
BB914
Dec-04-2002
BB914
diode marking DEC
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sot363 marking qs
Abstract: BAS16TW
Text: BAS16TW Multi-Chip Switching Diode Array Elektronische Bauelemente RoHS Compliant Product FEATURES • · · · A suffix of "-C" specifies halogen & lead-free SOT-363 Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion .055 1.40
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BAS16TW
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
sot363 marking qs
BAS16TW
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BB814
Abstract: BCW66 Infineon Technologies Silicon Tuning Diode
Text: BB814. Silicon Variable Capacitance Diodes • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and group matching
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BB814.
BB814
BB814
BCW66
Infineon Technologies Silicon Tuning Diode
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Untitled
Abstract: No abstract text available
Text: BB814. Silicon Variable Capacitance Diodes For FM radio tuners with extended frequency band High tuning ratio at low supply voltage car radio Monolithic chip (common cathode) for perfect dual diode tracking Coded capacitance groups and group matching
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BB814.
BB814
Dec-04-2002
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NTE30005
Abstract: NTE30006 NTE30007
Text: NTE30005, NTE30006, NTE30007 Light Emitting Diode LED Surface Mount Description: The NTE30005 thru NTE30007 are 1.6mm x 0.8mm chip LED lamps in a surface mount type package. The High Efficiency Red source color device (NTE30005) is made with Gallium Arsenide Phosphide
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NTE30005,
NTE30006,
NTE30007
NTE30005
NTE30007
NTE30005)
NTE30006)
NTE30007)
NTE30006
NTE30006
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Untitled
Abstract: No abstract text available
Text: BB814. Silicon Variable Capacitance Diodes • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and group matching
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BB814.
BB814
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BB814
Abstract: diode marking DEC c8v diode
Text: BB814. Silicon Variable Capacitance Diodes For FM radio tuners with extended frequency band High tuning ratio at low supply voltage car radio Monolithic chip (common cathode) for perfect dual diode tracking Coded capacitance groups and group matching
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BB814.
BB814
Dec-04-2002
EHD07054
EHD07057
BB814
diode marking DEC
c8v diode
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NTE30003
Abstract: NTE30002 NTE30004
Text: NTE30002, NTE30003, NTE30004 Light Emitting Diode LED Surface Mount Description: The NTE30002 thru NTE30004 are 2.0mm x 1.2mm chip LED lamps in a surface mount type package. The High Efficiency Red source color device (NTE30002) is made with Gallium Arsenide Phosphide
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NTE30002,
NTE30003,
NTE30004
NTE30002
NTE30004
NTE30002)
NTE30003)
NTE30004)
NTE30003
NTE30003
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Untitled
Abstract: No abstract text available
Text: BB814. Silicon Variable Capacitance Diodes • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and group matching
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BB814.
BB814
201components
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Untitled
Abstract: No abstract text available
Text: BB814. Silicon Variable Capacitance Diodes • For FM radio tuners with extended frequency band • High tuning ratio at low supply voltage car radio • Monolithic chip (common cathode) for perfect dual diode tracking • Coded capacitance groups and group matching
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BB814.
BB814
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pin diode switch up to 10 GHz
Abstract: No abstract text available
Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating
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MA4SW410
50MHz
26GHz
20GHz
MA4SW410
pin diode switch up to 10 GHz
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MA4SW410
Abstract: sp4t switch die
Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. V3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating
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MA4SW410
50MHz
26GHz
20GHz
MA4SW410
sp4t switch die
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Untitled
Abstract: No abstract text available
Text: MA4SW410 HMIC Silicon SP4T PIN Diode Switch RoHS Compliant Rev. 3 Features ♦ ♦ ♦ ♦ Ultra Broad Bandwidth: 50MHz to 26GHz 0.9 Insertion Loss , 34dB Isolation at 20GHz 50nS Switching Speed Fully Monolithic, Glass Encapsulated Chip with Polymer Protective Coating
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MA4SW410
50MHz
26GHz
20GHz
MA4SW410
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NTE30002
Abstract: NTE30003 NTE30004
Text: NTE30002, NTE30003, NTE30004 Light Emitting Diode LED 0805 Surface Mount Description: The NTE30002 thru NTE30004 are 2.0mm x 1.2mm chip LED lamps in a 0805 surface mount type package. The High Efficiency Red source color device (NTE30002) is made with Gallium Arsenide
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NTE30002,
NTE30003,
NTE30004
NTE30002
NTE30004
NTE30002)
NTE30003)
NTE30004)
NTE30003
NTE30003
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Untitled
Abstract: No abstract text available
Text: NTE30002, NTE30003, NTE30004 Light Emitting Diode LED 0805 Surface Mount Description: The NTE30002 thru NTE30004 are 2.0mm x 1.2mm chip LED lamps in a 0805 surface mount type package. The High Efficiency Red source color device (NTE30002) is made with Gallium Arsenide
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NTE30002,
NTE30003,
NTE30004
NTE30002
NTE30004
NTE30002)
NTE30003)
NTE30004)
NTE30003
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Untitled
Abstract: No abstract text available
Text: NTE30005, NTE30006, NTE30007 Light Emitting Diode LED 0603 Surface Mount Description: The NTE30005 thru NTE30007 are 1.6mm x 0.8mm chip LED lamps in a 0603 surface mount type package. The High Efficiency Red source color device (NTE30005) is made with Gallium Arsenide
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NTE30005,
NTE30006,
NTE30007
NTE30005
NTE30007
NTE30005)
NTE30006)
NTE30007)
Absolu0006
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Untitled
Abstract: No abstract text available
Text: SOLITRON DEVICES INC TSD D • 03b0b05 0005T22 3 Devices. Inc SCHOTTKY DIODE CHIP NUMBER 5 0 MILLIWATT SCHOTTKY DIODE CONTACT METALLIZATION Anode: Silver Cathode: Silver NOTE: This device is only available in an axial leaded DO-7 package. A node Contact:
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03b0b05
0005T22
100mA
C-131
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Untitled
Abstract: No abstract text available
Text: . 8368602 SOL ITRON DEVICES INC Î5 §5D 0 2 9 2 1 tË^ I 83t.abDa 0 0 0 2 1 » D ! T - £>?-ô f r ^JSgigrm Devices, Inc SCH O TTKY DIODE CHIP NUMBER LOW CAPACITANCE SCHOTTKY DIODE CONTACT METALLIZATION Anode: Silver Cathode: Silver •’.■fc*.''-•xr
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DO-35)
686mm)
047mm)
C-130
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