MS450RAB-823JSZ
Abstract: No abstract text available
Text: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations
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MS450RAB
1812LS
MS450RAB123JSZ
MS450RAB153JSZ
MS450RAB183JSZ
MS450RAB223JSZ
MS450RAB273JSZ
MS450RAB333JSZ
MS450RAB393JSZ
MS106-2
MS450RAB-823JSZ
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Untitled
Abstract: No abstract text available
Text: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations
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Original
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MS450RAB
1812LS
MS450RAB123JSZ
MS450RAB153JSZ
MS450RAB183JSZ
MS450RAB223JSZ
MS450RAB273JSZ
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PDF
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TEST+INSTRUMENTS+4192A+Impedance+Analyzer
Abstract: No abstract text available
Text: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations
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Original
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MS450RAB
1812LS
MS450RAB-123JSZ
MS450RAB-153JSZ
MS450RAB-183JSZ
MS450RAB-223JSZ
MS450RAB-273JSZ
MS450RAB-333JSZ
MS450RAB-393JSZ
MS106-2
TEST+INSTRUMENTS+4192A+Impedance+Analyzer
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marking code k3n
Abstract: No abstract text available
Text: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage
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MMDT3906
OT-363
2002/95/EC
Collector-base-40
Jun-2009,
KSTR03
MMDT3906
marking code k3n
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage
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MMDT4403
OT-363
2002/95/EC
Jun-2009,
KSTR06
MMDT4403
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PDF
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Untitled
Abstract: No abstract text available
Text: MMDT4401 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Low Power Amplification and Switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage
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MMDT4401
OT-363
2002/95/EC
Jun-2009,
KSTR05
MMDT4401
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PDF
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0805CS-080XMBC
Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2
Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420
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HBFP-0405
HBFP-0420
HBFP-0420
SC-70
OT343)
0805CS-080XMBC
HBFP0420
common emitter amplifier circuit designing
HBFP-04XX-2
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PTH hole diameter vs lead resistor
Abstract: HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2
Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420
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HBFP-0405
HBFP-0420
SC-70
OT343)
PTH hole diameter vs lead resistor
HBPF-0405
common emitter amplifier circuit designing
W202
unconditionally stable
HBFP-04XX-2
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PDF
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HBPF-0420
Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420
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HBFP-0405
HBFP-0420
SC-70
OT343)
HBPF-0420
SOT343 C5
W04 transistor
Transistor W06
transistor w04
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VTT9102
Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
Text: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted
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VTT1212,
VTE12xx
VTT9102
VTT9103
VTT9102
VTT1212
VTT1214
VTT9002
VTT9003
VTT9103
opto 101
case to106
transistor To-106
transistor case To 106
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Untitled
Abstract: No abstract text available
Text: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14
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5M-1982.
O-263
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Untitled
Abstract: No abstract text available
Text: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability
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RMPG06A
RMPG06K
22-B106
AEC-Q101
MPG06
2002/95/EC
2002/96/EC
18-Jul-08
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0805 footprint dimension
Abstract: 1206 footprint dimension 1210 footprint
Text: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)
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1206 footprint dimension
Abstract: footprint plcc 32 0805 size footprint
Text: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)
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-30oC
1206 footprint dimension
footprint plcc 32
0805 size footprint
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Untitled
Abstract: No abstract text available
Text: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability
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RMPG06A
RMPG06K
22-B106
AEC-Q101
MPG06
2002/95/EC
2002/96/EC
11-Mar-11
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diode mpg06g
Abstract: No abstract text available
Text: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A
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MPG06A,
MPG06B,
MPG06D,
MPG06G,
MPG06J,
MPG06K,
MPG06M
22-B106
MPG06
AEC-Q101
diode mpg06g
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Untitled
Abstract: No abstract text available
Text: MPG06A thru MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability
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MPG06A
MPG06M
22-B106
MPG06
AEC-Q101
MPG06,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A
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MPG06A,
MPG06B,
MPG06D,
MPG06G,
MPG06J,
MPG06K,
MPG06M
22-B106
MPG06
AEC-Q101
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PDF
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Untitled
Abstract: No abstract text available
Text: RMPG06A thru RMPG06K www.vishay.com Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability
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RMPG06A
RMPG06K
22-B106
AEC-Q101
MPG06
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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PDF
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MPG06M
Abstract: J-STD-002 MPG06A MPG06B MPG06G
Text: MPG06A thru MPG06M Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability
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MPG06A
MPG06M
22-B106
MPG06
AEC-Q101
2002/95/EC
2002/96/EC
MPG06,
11-Mar-11
MPG06M
J-STD-002
MPG06B
MPG06G
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PDF
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Untitled
Abstract: No abstract text available
Text: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability
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RMPG06A
RMPG06K
22-B106
AEC-Q101
MPG06
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
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PDF
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mml 600
Abstract: No abstract text available
Text: BASIC ORDER UNIT itic k ic o n B Request on Order Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Size of product Bulk | — — — — Long lead * 3 *4 Chip Type _
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OCR Scan
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ZPP35
ZPP22
mml 600
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PDF
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XD250
Abstract: mml 600 100VD
Text: nîcKîcon BASIC ORDER UNIT • R e q u e st on O rd e r Q ua ntity: Please note the order quantity must be in multiples of the following base quantity. SOLID ORGANIC POLYMER ALUMINIUM ELECTROLYTIC CAPACITORS Size of product Lonq Lead Bulk I i 6 .3 X 6 Chip
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: SFH303 SFH303FA DAYLIGHT FILTER Siticon NPN Phototransistor Dimensions in inches mm GE006351 FEATURES • Especially suitable for applications - SFH 303:450 nm to 1100 nm - SFH 303 FA: 800 nm • High linearity • T13/ 4 (5 mm) LED plastic package • Also available on tape
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OCR Scan
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SFH303
SFH303FA
GE006351
950nm
SFH303
JtO20
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PDF
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