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    CHIP BASE LEAD PLASTIC Search Results

    CHIP BASE LEAD PLASTIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CY7B991V-5JXI Rochester Electronics LLC PLL Based Clock Driver, 7B Series, 4 True Output(s), 0 Inverted Output(s), PQCC32, LEAD FREE, PLASTIC, LCC-32 Visit Rochester Electronics LLC Buy
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HLFYAUG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HNFZAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP100-1414-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    CHIP BASE LEAD PLASTIC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MS450RAB-823JSZ

    Abstract: No abstract text available
    Text: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations


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    MS450RAB 1812LS MS450RAB123JSZ MS450RAB153JSZ MS450RAB183JSZ MS450RAB223JSZ MS450RAB273JSZ MS450RAB333JSZ MS450RAB393JSZ MS106-2 MS450RAB-823JSZ PDF

    Untitled

    Abstract: No abstract text available
    Text: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations


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    MS450RAB 1812LS MS450RAB123JSZ MS450RAB153JSZ MS450RAB183JSZ MS450RAB223JSZ MS450RAB273JSZ PDF

    TEST+INSTRUMENTS+4192A+Impedance+Analyzer

    Abstract: No abstract text available
    Text: 1812 CHIP INDUCTORS High-Reliability Chip Inductors MS450RAB This robust version of Coilcraft’s standard 1812LS series features high temperature materials that allow operation in ambient temperatures up to 155°C. The leach-resistant base metalization with tin-lead Sn-Pb terminations


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    MS450RAB 1812LS MS450RAB-123JSZ MS450RAB-153JSZ MS450RAB-183JSZ MS450RAB-223JSZ MS450RAB-273JSZ MS450RAB-333JSZ MS450RAB-393JSZ MS106-2 TEST+INSTRUMENTS+4192A+Impedance+Analyzer PDF

    marking code k3n

    Abstract: No abstract text available
    Text: MMDT3906 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage


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    MMDT3906 OT-363 2002/95/EC Collector-base-40 Jun-2009, KSTR03 MMDT3906 marking code k3n PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4403 PNP/PNP Multi-Chip Transistor FEATURES • Ideal for low power amplification and switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage


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    MMDT4403 OT-363 2002/95/EC Jun-2009, KSTR06 MMDT4403 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT4401 NPN/NPN Multi-Chip Transistor FEATURES • Ideal for Low Power Amplification and Switching MECHANICAL DATA • Case: SOT-363 Plastic • Lead Free in RoHS 2002/95/EC Compliant Maximum Ratings @ TA = 25℃ Characteristic Symbol Value Unit Collector-Base Voltage


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    MMDT4401 OT-363 2002/95/EC Jun-2009, KSTR05 MMDT4401 PDF

    0805CS-080XMBC

    Abstract: HBFP-0405 HBFP0420 HBFP-0420 common emitter amplifier circuit designing HBFP-04XX-2
    Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Agilent Technologies’ HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


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    HBFP-0405 HBFP-0420 HBFP-0420 SC-70 OT343) 0805CS-080XMBC HBFP0420 common emitter amplifier circuit designing HBFP-04XX-2 PDF

    PTH hole diameter vs lead resistor

    Abstract: HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2
    Text: 800 to 950 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1161 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


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    HBFP-0405 HBFP-0420 SC-70 OT343) PTH hole diameter vs lead resistor HBPF-0405 common emitter amplifier circuit designing W202 unconditionally stable HBFP-04XX-2 PDF

    HBPF-0420

    Abstract: SOT343 C5 W04 transistor Transistor W06 transistor w04
    Text: 1800 to 1900 MHz Amplifiers using the HBFP-0405 and HBFP-0420 Low Noise Silicon Bipolar Transistors Application Note 1160 Introduction Hewlett-Packard’s HBFP-0405 and HBFP-0420 are high performance isolated collector silicon bipolar transistors housed in 4-lead SC-70 SOT343 surface mount plastic packages. Both the HBFP-0405 and HBFP-0420


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    HBFP-0405 HBFP-0420 SC-70 OT343) HBPF-0420 SOT343 C5 W04 transistor Transistor W06 transistor w04 PDF

    VTT9102

    Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
    Text: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted


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    VTT1212, VTE12xx VTT9102 VTT9103 VTT9102 VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106 PDF

    Untitled

    Abstract: No abstract text available
    Text: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14


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    5M-1982. O-263 PDF

    Untitled

    Abstract: No abstract text available
    Text: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability


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    RMPG06A RMPG06K 22-B106 AEC-Q101 MPG06 2002/95/EC 2002/96/EC 18-Jul-08 PDF

    0805 footprint dimension

    Abstract: 1206 footprint dimension 1210 footprint
    Text: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)


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    PDF

    1206 footprint dimension

    Abstract: footprint plcc 32 0805 size footprint
    Text: Low Profile Ceramic Chip Capacitors CROSS SECTION OF PLASTIC LEADED CHIP CARRIER PLCC , (SOJ) ➛ NMC-E SERIES PRINTED CIRCUIT BOARD SPECIFICATIONS Z5U SPECIFICATIONS Z5U Y5V Operating Temperature Range +10oC to +85oC -30oC to +85oC Temperature Characteristics (∆C max.)


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    -30oC 1206 footprint dimension footprint plcc 32 0805 size footprint PDF

    Untitled

    Abstract: No abstract text available
    Text: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability


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    RMPG06A RMPG06K 22-B106 AEC-Q101 MPG06 2002/95/EC 2002/96/EC 11-Mar-11 PDF

    diode mpg06g

    Abstract: No abstract text available
    Text: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A


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    MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M 22-B106 MPG06 AEC-Q101 diode mpg06g PDF

    Untitled

    Abstract: No abstract text available
    Text: MPG06A thru MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability


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    MPG06A MPG06M 22-B106 MPG06 AEC-Q101 MPG06, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    Untitled

    Abstract: No abstract text available
    Text: MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A


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    MPG06A, MPG06B, MPG06D, MPG06G, MPG06J, MPG06K, MPG06M 22-B106 MPG06 AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: RMPG06A thru RMPG06K www.vishay.com Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability


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    RMPG06A RMPG06K 22-B106 AEC-Q101 MPG06 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    MPG06M

    Abstract: J-STD-002 MPG06A MPG06B MPG06G
    Text: MPG06A thru MPG06M Vishay General Semiconductor Miniature Glass Passivated Junction Plastic Rectifier FEATURES • Glass passivated chip junction • Low forward voltage drop • Low leakage current, typical IR less than 0.1 A • High forward surge capability


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    MPG06A MPG06M 22-B106 MPG06 AEC-Q101 2002/95/EC 2002/96/EC MPG06, 11-Mar-11 MPG06M J-STD-002 MPG06B MPG06G PDF

    Untitled

    Abstract: No abstract text available
    Text: RMPG06A thru RMPG06K Vishay General Semiconductor Miniature Fast Switching Plastic Rectifier FEATURES • Glass passivated chip junction • Fast switching for high efficiency • Low leakage current, typical IR less than 0.1 A • High forward surge capability


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    RMPG06A RMPG06K 22-B106 AEC-Q101 MPG06 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. PDF

    mml 600

    Abstract: No abstract text available
    Text: BASIC ORDER UNIT itic k ic o n B Request on Order Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Size of product Bulk | — — — — Long lead * 3 *4 Chip Type _


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    ZPP35 ZPP22 mml 600 PDF

    XD250

    Abstract: mml 600 100VD
    Text: nîcKîcon BASIC ORDER UNIT • R e q u e st on O rd e r Q ua ntity: Please note the order quantity must be in multiples of the following base quantity. SOLID ORGANIC POLYMER ALUMINIUM ELECTROLYTIC CAPACITORS Size of product Lonq Lead Bulk I i 6 .3 X 6 Chip


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: SFH303 SFH303FA DAYLIGHT FILTER Siticon NPN Phototransistor Dimensions in inches mm GE006351 FEATURES • Especially suitable for applications - SFH 303:450 nm to 1100 nm - SFH 303 FA: 800 nm • High linearity • T13/ 4 (5 mm) LED plastic package • Also available on tape


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    SFH303 SFH303FA GE006351 950nm SFH303 JtO20 PDF