LTC3780
Abstract: LTC4446 LTC4444-5 LTC4444E-5 LTC4444I-5 LTC4444MP-5 LTC4444MPMS8E-5 LTC3780EG 4.5V to 100V input regulator LTC4440-5
Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current
|
Original
|
PDF
|
LTC4444-5
LTC4444-5
LTC4449
LTC4441/LTC4441-1
LTC1154
44445fb
LTC3780
LTC4446
LTC4444E-5
LTC4444I-5
LTC4444MP-5
LTC4444MPMS8E-5
LTC3780EG
4.5V to 100V input regulator
LTC4440-5
|
LTC4444-5
Abstract: LTC4444HMS8E LTC4444MPMS8E LTC4446 8H,D3 4444 diode bg 8pin msop package LTC4440-5 LTC1154
Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs with
|
Original
|
PDF
|
LTC4444
LTC4449
LTC4441/LTC4441-1
LTC1154
4444fb
LTC4444-5
LTC4444HMS8E
LTC4444MPMS8E
LTC4446
8H,D3
4444 diode
bg 8pin msop package
LTC4440-5
LTC1154
|
LTC4440-5
Abstract: LTC1154
Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current
|
Original
|
PDF
|
LTC4444
LTC4444
LTC4449
LTC4441/LTC4441-1
LTC1154
4444fb
LTC4440-5
LTC1154
|
LTC4440-5
Abstract: LTC1154
Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES n n n n n n n n n n n n n n DESCRIPTION Bootstrap Supply Voltage to 114V Wide VCC Voltage: 4.5V to 13.5V Adaptive Shoot-Through Protection 1.4A Peak Top Gate Pull-Up Current 1.75A Peak Bottom Gate Pull-Up Current
|
Original
|
PDF
|
LTC4444-5
LTC4444-5
LTC4449
LTC4441/LTC4441-1
LTC1154
44445fc
LTC4440-5
LTC1154
|
LTC4444-5
Abstract: LTC4444MP LTC4444MPMS8E LTC4446 4444 diode LTC4440-5 LTC1154
Text: LTC4444 High Voltage Synchronous N-Channel MOSFET Driver Features n n n n n n n n n n n n n n Description Bootstrap Supply Voltage to 114V Wide VCC Voltage: 7.2V to 13.5V Adaptive Shoot-Through Protection 2.5A Peak TG Pull-Up Current 3A Peak BG Pull-Up Current
|
Original
|
PDF
|
LTC4444
LTC4444
LTC4449
LTC4441/LTC4441-1
LTC1154
4444fa
LTC4444-5
LTC4444MP
LTC4444MPMS8E
LTC4446
4444 diode
LTC4440-5
LTC1154
|
LTC4444H-5
Abstract: LTC4444-5 WSL2512R0250FEA CDEP147NP-100MC-125 LTC4444I-5 MMDL770T1G LTC4444E-5 LTC4444HMS8E-5 LTC4444MPMS8E-5 LTC4446
Text: LTC4444-5 High Voltage Synchronous N-Channel MOSFET Driver FEATURES DESCRIPTION n The LTC 4444-5 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages up to 100V. This powerful driver reduces switching losses in MOSFETs
|
Original
|
PDF
|
LTC4444-5
LTC4449
LTC4441/LTC4441-1
LTC1154
44445fc
LTC4444H-5
LTC4444-5
WSL2512R0250FEA
CDEP147NP-100MC-125
LTC4444I-5
MMDL770T1G
LTC4444E-5
LTC4444HMS8E-5
LTC4444MPMS8E-5
LTC4446
|
Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si7101DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C
|
Original
|
PDF
|
Si7101DN
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
NE33284AS
Abstract: NE33284A NE33284A-SL NE33284A-T1 MODEL 536
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
|
Original
|
PDF
|
NE33284A
24-Hour
NE33284AS
NE33284A-SL
NE33284A-T1
MODEL 536
|
NE33284A
Abstract: NE33284AS NE33284A-SL NE33284A-T1
Text: SUPER LOW NOISE HJ FET • VERY LOW NOISE FIGURE: 0.8 dB typical at 12 GHz • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION Noise Figure, NF dB • HIGH ASSOCIATED GAIN:
|
Original
|
PDF
|
NE33284A
24-Hour
NE33284AS
NE33284A-SL
NE33284A-T1
|
MALLORY CAPACITORS cgs
Abstract: MALLORY TYPE CGS S85IU CGS402T200W4C 24U02 CGS35IT450R5C si93 CGS302U025 CGS102T350V4C cgs822u035r3c
Text: Type CGS • MallorY Computer Grade Capacitors GENERAL SPECIFICATIONS DC Leakage C urrent: I = .006 V C V after 30 minutes Not to exceed 6mA C = Capacitance in V = Rated Voltage I = Leakage Current in mA ■ High CV Product ■ Screw Terminals ■ Suitable for use in most
|
OCR Scan
|
PDF
|
75/iF
000/xF
valuS45IT450V3C
CGS48IT450V4C
CGS651T450V4C
CGS80IT450V4L
CGS971T450V4C
102T450W
142T450W
142T450V5L
MALLORY CAPACITORS cgs
MALLORY TYPE CGS
S85IU
CGS402T200W4C
24U02
CGS35IT450R5C
si93
CGS302U025
CGS102T350V4C
cgs822u035r3c
|
MALLORY CGS CAPACITORS
Abstract: mallory capacitor fp CGS222U050R2C Mallory Type CGS Mallory cgs MALLORY CAPACITOR CATALOG MALLORY 150 M CAPACITORS
Text: • Types CGS, CG, CGR, CGO, CGH Dimensions and Size Charts MallorY Case Code Chart Uninsulated Can_ _Inches . — A O O ro a « o E 3 R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L
|
OCR Scan
|
PDF
|
CGS131T350R2C
CGS251T350R3C
CGS381T350R4C
CGS651T350V3C
CGS801T350V4C
102T350R4C
CGS102T350V4C
CGS132T350V5L
CGS152T350W4C
CGS162T350V4C
MALLORY CGS CAPACITORS
mallory capacitor fp
CGS222U050R2C
Mallory Type CGS
Mallory cgs
MALLORY CAPACITOR CATALOG
MALLORY 150 M CAPACITORS
|
Mallory Type CG
Abstract: CGS133U040V4C
Text: Types CGS, CG, CGR, CGO, CGH I M allorY Dimensions and Size Charts Case Code Chart Uninsulated Can_ Case C ode R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L W5C W5L X3L X4C X4L X5C X5L
|
OCR Scan
|
PDF
|
CGS131T350R2C
CGS251T350R3C
CGS381T350R4C
CGS651T350V3C
CGS801T350V4C
CGS102T350R4C
CGS102T350V4C
CGS132T350V5L
CGS152T350W4C
CGS162T350V4C
Mallory Type CG
CGS133U040V4C
|
lg 5528
Abstract: No abstract text available
Text: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION
|
OCR Scan
|
PDF
|
4268Solar
lg 5528
|
Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE usvt I- r m blEMlOQ 00D023A LTS • PIRUV w T - 3 26 GHz High Power GaAs FET 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES r —7Pr l «* ■ M MicroWave Technology t » • +21 DBM OUTPUT POWER AT 12 GHZ
|
OCR Scan
|
PDF
|
00D023Ã
|
|
|
transistor WT6
Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE
|
OCR Scan
|
PDF
|
|
MwT-671
Abstract: LQD 421 MWT671HP lsoj
Text: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 4m * • • • • • • Units in pun 4-50-fc 70 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH
|
OCR Scan
|
PDF
|
bl24100
000057b
MwT-671
LQD 421
MWT671HP
lsoj
|
MWT370HP
Abstract: IAM F30 371 fet MwT-373
Text: MwT - 3 26 GHz High Power GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FA X 510-651-2208 FEATURES rr n c: — • +21 DBM OUTPUT POWER AT 12 GHZ T n — 4 t« • 11 DB SMALL SIGNAL GAIN AT 12 GHZ 7t „J U J.L U •0.3 MICRON REFRACTORY METAL/GOLD GATE
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MwT-S7 u s M ic r o w a v e 18 GHz High Gain, Low Noise GaAs FET a techno lo gy àk • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL7GOLD GATE • 250 MICRON GATE WIDTH
|
OCR Scan
|
PDF
|
I4-50
|
78567
Abstract: LS 373
Text: MwT-3 26 GHz High Power GaAs FET Mic r o w a v e T e c h n o lo g y rr +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES Unite in 241 I« 75 J
|
OCR Scan
|
PDF
|
|
mwt-970
Abstract: 16662 ic 74390 61787
Text: MwT-9 M ic r o w ave 18 GHz High Power GaAs FET T echno lo g y ri iiiniiiMiiii! +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES - • _ I
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MwT-9 ËàkWiü 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r 1 67 +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAUGOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES p it t iiiim
|
OCR Scan
|
PDF
|
0000b04
|
LD 8164
Abstract: ic lg 631
Text: MwT-9 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y r,!i 6/ löSmmjuir +26 dBm OUTPUT POWER AT 12 GHz 8.5 dB SMALL SIGNAL GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES rAï
|
OCR Scan
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: MwT-3 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • +21 DBM OUTPUT POWER AT 12 GHZ 11 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAL/GOLD GATE 300 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES
|
OCR Scan
|
PDF
|
|
