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Abstract: No abstract text available
Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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Original
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PDF
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CGHV96100F1
50-ohm,
CGHV96100F1
CGHV96
100F1
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CGHV96100F1
Abstract: taconic
Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
|
Original
|
PDF
|
CGHV96100F1
50-ohm,
CGHV96100F1
CGHV96
100F1
taconic
|