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    CGH27060 Price and Stock

    MACOM CGH27060F

    RF MOSFET HEMT 28V 440193
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH27060F Tray 74 1
    • 1 $244.68
    • 10 $244.68
    • 100 $244.68
    • 1000 $244.68
    • 10000 $244.68
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    Mouser Electronics CGH27060F 99
    • 1 $244.68
    • 10 $244.68
    • 100 $244.67
    • 1000 $244.67
    • 10000 $244.67
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    Richardson RFPD CGH27060F 50
    • 1 -
    • 10 -
    • 100 $234.89
    • 1000 $234.89
    • 10000 $234.89
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    MACOM CGH27060F-AMP

    AMPLIFIER, 2.3-2.7GHZ, CGH27060F
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CGH27060F-AMP Bulk 1
    • 1 $787.51
    • 10 $787.51
    • 100 $787.51
    • 1000 $787.51
    • 10000 $787.51
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    Mouser Electronics CGH27060F-AMP
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    Richardson RFPD CGH27060F-AMP 1
    • 1 -
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    CGH27060 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CGH27060F Cree 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Original PDF

    CGH27060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CGH27060

    Abstract: str 16006 CGH40045F CGH27015 CGH27060F JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 CGH27060 str 16006 CGH40045F CGH27015 JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw

    str 5 q 0765

    Abstract: CGH27060F transistor 15478 EVM1 10UF 470PF CGH27060-TB RO4350B str 0765 J2/transistor 15478
    Text: CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and


    Original     		PDF CGH27060F CGH27060F CGH2706 01roduct str 5 q 0765 transistor 15478 EVM1 10UF 470PF CGH27060-TB RO4350B str 0765 J2/transistor 15478

    Untitled

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706

    CGH27060F

    Abstract: 10UF 470PF
    Text: PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and


    Original     		PDF CGH27060F CGH27060F CGH2706 10UF 470PF

    str 16006

    Abstract: 44019
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 str 16006 44019

    str 5 q 0765

    Abstract: CGH27060 str 16006 CGH27060F 10UF 470PF CGH27015 JESD22
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 str 5 q 0765 CGH27060 str 16006 10UF 470PF CGH27015 JESD22

    Untitled

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706

    cgh40045

    Abstract: str 5 q 0765
    Text: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 cgh40045 str 5 q 0765

    str 5 q 0765

    Abstract: No abstract text available
    Text: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,


    Original     		PDF CGH27060F CGH27060F CGH2706 str 5 q 0765

    CGH09120F

    Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F
    Text: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR


    Original     		PDF CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F

    10UF

    Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238
    Text: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,


    Original     		PDF CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238

    transistor C1096

    Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band
    Text: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs


    Original     		PDF